2023
DOI: 10.48550/arxiv.2301.12645
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Magnetic field imaging by hBN quantum sensor nanoarray

Abstract: Placing a sensor close to the target at the nano-level is a central challenge in quantum sensing. We demonstrate high-spatial-resolution magnetic field imaging with a

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Cited by 1 publication
(2 citation statements)
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“…In addition, we varied the thickness of hBN, the energy of the femtosecond laser pulse, and the type of substrate to explore the best generation conditions of the spin defects. Under the appropriate conditions, we can deterministically and efficiently generate a spin defect array with low damage to the sample, which can be used as a quantum magnetic sensor array. , Our work provides a powerful method to generate spin defects in hBN and paves the way for future studies and spin-based quantum technologies.…”
Section: Introductionmentioning
confidence: 99%
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“…In addition, we varied the thickness of hBN, the energy of the femtosecond laser pulse, and the type of substrate to explore the best generation conditions of the spin defects. Under the appropriate conditions, we can deterministically and efficiently generate a spin defect array with low damage to the sample, which can be used as a quantum magnetic sensor array. , Our work provides a powerful method to generate spin defects in hBN and paves the way for future studies and spin-based quantum technologies.…”
Section: Introductionmentioning
confidence: 99%
“…The negatively charged boron vacancy (V B – ) defect is the most studied spin defect in hBN. The structure and properties have been deeply researched in experiment and theory, and the V B – ensemble can be easily fabricated by neutron irradiation, electron irradiation, femtosecond laser ablation, and ion implantation, , etc. Recently, given the two-dimensional (2D) nature of hBN, V B – has been demonstrated to show promising performance for in situ quantum sensing and has become a research hotspot. Moreover, relatively few studies have been carried out on other spin defects including defects related to carbon and some defects with a zero-phonon line (ZPL) at around 720 and 545 nm. These defects have many outstanding properties, such as high brightness and high Debye–Waller (DW) factor, and isolated single spins also have been found.…”
Section: Introductionmentioning
confidence: 99%