Magnetic-field-driven electron transport in SOI back-gate device

Abstract

In this work, we studied the electronic transport properties of silicon nanowire field-effect transistors with a back gate. A nontrivial magnetic field influence on the drain current at low temperature (10 K) was found. The strongest effect was observed in the majority carrier accumulation mode. In this mode magnetic field of 0.5 T increases current through the device by more than an order of magnitude. The paper describes the possible mechanisms of the magnetic field influence on the electronic transport characteristics of the structures.