Magnetic field dependence of threshold electric field for magnetoelectric switching of exchange-bias polarity

Nguyen, Thu-Thuy; Shiratsuchi, Yu; Kobane, Atsushi; Yoshida, Saori; Nakatani, Ryoichi

doi:10.1063/1.4991053

Cited by 20 publications

(36 citation statements)

References 27 publications

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“…This research has developed detection techniques which access the 180° difference in the antiferromagnetic spin . However, an isothermal, practical 180° control of antiferromagnetic spin in Cr 2 O 3 is still uneasy . Since the 180° control of antiferromagnetic spin and antiferromagnetic single domain state obtained by it are an indispensable piece for the expression of the superior properties of AFMs, the easier way has been highly desired.…”

mentioning

confidence: 99%

Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet

Nozaki

Al‐Mahdawi

Shiokawa

et al. 2018

Physica Rapid Research Ltrs

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Antiferromagnets and ferrimagnets with a low net magnetic moment are key components for future spintronic devices because they enable high-integration and high-speed (on the order of THz) operations. Cr 2 O 3 is one of the few antiferromagnets that can achieve 180 manipulation of its spin by electrical means. In this study, the authors developed a new functional material, Cr 2 O 3 , with tunable parasitic magnetization. The authors demonstrate both magnitude and direction tunability of parasitic magnetization in Cr 2 O 3 thin films by doping. A sublattice magnetization reduction and displacement-induced nonequivalent Cr moments by site-selective substitution of nonmagnetic elements are inferred to be the origin of the parasitic magnetization. By utilizing the tunable parasitic magnetization, the authors demonstrate the manipulation of antiferromagnetic single domain. In addition, the authors confirm the low-electric-field switching ability of the antiferromagnetic spin in a doped Cr 2 O 3 /Co exchange coupling system. Such tunable parasitic magnetization enables easy manipulation and detection of antiferromagnetic spin and provides a platform for further understanding of antiferromagnets and research opportunities in innovative spintronics device applications.For a decade, ferromagnetic materials have played a prominent role in the development of spintronics. Ferromagnet (FM)based spintronics have resulted in unique high-performance devices, such as magnetoresistive random-access memory (MRAM). [1] However, specific problems, such as magnetic interferences, are a considerable barrier to further integration of these devices, restricting their future development. One way to overcome such problems is to utilize antiferromagnets (AFMs) or ferrimagnets with low net magnetic moments instead of FMs. As stated by N eel, [2] the high potential of AFMs has been recognized for a long time; AFMs do not generate stray fields, are stable in the presence of an external magnetic field, and have THz precession frequency, which enable the realization of high-integration and ultra-high-speed operation devices. Although the difficulty in conventional manipulation and detection of antiferromagnetic spin restricts its spintronics applications, these processes have increasingly become more feasible due to recent progress. [3][4][5] In particular, 90 control (uniaxial anisotropy control) of antiferromagnetic spin become more feasible. 90 manipulations of the antiferromagnetic spin using an electric current were demonstrated for FeRh through current-induced Joule heating, [6,7] and CuMnAs through spin-orbit torque. [8,9] The corresponding detection techniques, such as anisotropic magnetoresistance (AMR), [8,10,11] tunnel anisotropic magnetoresistance (TAMR), [12] and spin Hall magnetoresistance (SMR) of AFM, [13] which can detect 90 difference in antiferromagnetic spin has also been developed. In contrast, 180 control (unidirectional anisotropy control) of antiferromagnetic spins has been rarely demonstrated, while it enable higher perfo...

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mentioning

confidence: 99%

Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet

Nozaki

Al‐Mahdawi

Shiokawa

et al. 2018

Physica Rapid Research Ltrs

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“…In addition, the estimated value of JSFMSAFM differs from that of the ideal model. That is, the estimated JSFMSAFM was 27) approximately twice of the exchange anisotropy energy density, JK = HEXMStFM = 5.810 −3 mJ/m 2 . The values of JSFMSAFM and JK might be equal when the pinned spin model 41) is valid in our film.…”

Section: Static Switching Using DC Voltagementioning

confidence: 94%

“…Although the switching based on the MEFC process requires temperature hysteresis, the temperature change is not involved in the isothermal switching. In addition, we can obtain additional information, such as the reversibility of the switching 27) and the dynamics of the ME-induced switching 28) , which could help with the full understanding of ME switching. This section presents the results for the Pt/Co/Au/Cr2O3/Pt stacked film, in which the Au spacer layer was deposited to tune the interfacial exchange coupling strength and interfacial magnetic anisotropy 30) .…”

Section: Isothermal Processmentioning

confidence: 99%

“…MAFM can be caused by the defect-induced finite magnetization 40) and/or the interfacial uncompensated AFM moment, which was the dominant factor in our case. 27) Note that in eq. 3…”

Section: Static Switching Using DC Voltagementioning

confidence: 99%

“…In 2014, we presented the experimental evidence of the boundary magnetization on Cr2O3(0001) 22) including the roughness-insensitive magnetization, absence of the training effect of exchange bias, and ME switching. Nowadays, owing to the achievement of both the MEFC [22][23][24] and isothermal switching [25][26][27][28] in an all-thin-film system, we can access the details of the ME switching such as the energy condition of the switching 27) and switching dynamics 28) . In this paper, we review the recent progress of the ME control of the AFM domain state of Cr2O3, mainly based on our own results as the subject of the magnetic society of Japan (MSJ) outstanding research award 2017.…”

Section: Introductionmentioning

confidence: 99%

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Magnetoelectric Control of Antiferromagnetic Domain of Cr<sub>2</sub>O<sub>3</sub> Thin Film Toward Spintronic Application

2018

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Cr2O3 is a magnetoelectric antiferromagnet, and its antiferromagnetic domain state is controllable by the simultaneous application of magnetic and electric fields. In the 2000s, that is, more than 50 years since the discovery of the magnetoelectirc effect in Cr2O3, efforts were initiated apply this effect to engineering applications. In this article, we review the recent progress of the magnetoelectric control of the antiferromagnetic domain state and the related phenomena of Cr2O3, in particular, in an all-thin film system, an essential step to the application.

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Multiferroelectric Materials

Guo

2022

Spintronics

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Magnetic field dependence of threshold electric field for magnetoelectric switching of exchange-bias polarity

Cited by 20 publications

References 27 publications

Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet

Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet

Magnetoelectric Control of Antiferromagnetic Domain of Cr<sub>2</sub>O<sub>3</sub> Thin Film Toward Spintronic Application

Multiferroelectric Materials

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