Magnetic field depedennce of pinning mechanisms in Bi2Sr2Ca1Cu2O8+x thin films

Attanasio, C.; Coccorese, C.; Kushnir, V. N.; Maritato, L.; Prischepa, S. L.; Salvato, M.

doi:10.1016/0921-4534(95)00616-8

Cited by 30 publications

(19 citation statements)

References 28 publications

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“…Since m directly reflects the dynamic properties of the NRVL of HTSC, we should associate the change of m with the competition between pinning effect and correlation effect and the interaction between flux lines. It can be seen that our results are different from those of van der Beek et al [27] and Attanasio et al [28] suggested the UJ relation as U $ U pl 1 À J=J c or U $ U01 À J=J c 1:5 , because we take a more general phenomenological assumption as Eq. (2) fields, respectively.…”

Section: Method Results and Discussioncontrasting

confidence: 55%

Vortex Dynamic Properties of Vortex-Liquid Phase in YBa2Cu3O7-? Epitaxial Films

Shan

Wang

et al. 2000

phys. stat. sol. (b)

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The current–voltage characteristics (CVC) of YBa2Cu3O7–δ epitaxial films were determined at temperatures and magnetic fields covering the vortex‐liquid region. Using functional fitting and scaling method, we derived the temperature and magnetic field dependences of the pinning potential U0(T,H) and critical current density Jc(T,H), and current, temperature and magnetic field dependences of the effective pinning potential Ueff(H,T,J) from the CVC. It is shown that the nonlinear resistance region of the vortex‐liquid phase displays a process from vortex plastic motion to free flow with the dynamic exponent changing from –0.5 to 0.

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Section: Method Results and Discussioncontrasting

confidence: 55%

Vortex Dynamic Properties of Vortex-Liquid Phase in YBa2Cu3O7-? Epitaxial Films

Shan

Wang

et al. 2000

phys. stat. sol. (b)

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“…In Bi:2212 thin films, for B < B 0 (B 0 ∼ = 0.7 T) pinning mechanisms can be described as pinning of individual vortices in the presence of a pinning mechanisms can be described as pinning strength distribution. 3 We analysed the U (B) curves in the framework of the model by Innui et al 13 by using Eq. (6).…”

Section: Resultsmentioning

confidence: 99%

“…In particular, the obtained magnetic field dependence U (H) is well described by the law U (H) ∼ H −0.5 for BSCCO films in both 2212 and 2223 systems. [1][2][3] It is well known that the partial substitution of 3d elements for Cu induces pinning centres localised in the Cu-O 2 planes. The Partial substitution of Ni for Cu in the 110 K phase Bi:2223 revealed that nearly a single phase can be obtained up to x = 0.015 Ni and the critical transition temperature T c monotonously decreased in the region x ≤ 0.03.…”

Section: Introductionmentioning

confidence: 99%

“…13 The logarithmic decrease of U (H) in Bi:22212 thin films was explained assuming the pinning of individual vortices in the presence of a pinning strength distribution. 3 Another possible mechanisms responsible for the [1−(T /T c )] ln B dependence of the activation energies are: the generation of edge dislocation pairs in the vortices with a short correlation length, 14,15 the thermally activated vortex-antivortex pairs 16 and simulation cutting of vortices. 17,18 In this paper we report the effect of the partial substitution for Cu by x = 0.02 Ni in (Bi,Pb):2223 superconductor on the vortex motion by using magnetoresistivity measurements up to 0.7 Tesla.…”

Section: Introductionmentioning

confidence: 99%

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EFFECT OF Ni SUBSTITUTION FOR Cu IN THE VORTEX STATE OF (Bi,Pb):2223 SUPERCONDUCTOR

Pop

1999

Int. J. Mod. Phys. B

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The influence of the partial substitution of x = 0.02 Ni for Cu on the magnetoresistivity in the (Bi,Pb):2223 superconductor has been investigated. The resistive transitions were studied under magnetic fields up to 0.7 Tesla by using the dρ/dT versus T curves. The Arrhenius plots shows that the dissipation processes are induced by two distinct regimes. In the high temperature regime the activation energy is proportional to ln B and to B −1 in low temperature regime. The main dissipation processes in these regimes are discussed.

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“…which allows in principle the current, the magnetic field and the temperature dependences of the pinning energy U ρ to be investigated [14].…”

Section: Resultsmentioning

confidence: 99%

Influence of Silicon Dioxide Doping on Morphology of Silicon Nanowires Grown by Floating Zone Method

Araki

et al. 2002

Jpn. J. Appl. Phys.

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We have measured the resistive transition of molecular beam epitaxy prepared Bi 2 Sr 2 CaCu 2 O 8+x thin films in the presence of perpendicular low magnetic fields H (0 Oe < H < 1100 Oe) for different values of the bias current density J (10 2 A cm −2 < J < 10 5 A cm −2 ). The experimental data show two distinct dissipative behaviours. In the low-current region (J < 10 3 A cm −2 ) the electrical resistivity ρ is independent on J , changing only with H , while in the high-current region (J > 10 4 A cm −2 ) ρ is independent of both the bias current and the magnetic field. The result is considered in terms of thermally activated flux flow-flux creep-steady flux flow crossovers. The role of the statistical distribution of the pinning energy in the vortex dynamics is discussed.

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Magnetic field depedennce of pinning mechanisms in Bi2Sr2Ca1Cu2O8+x thin films

Cited by 30 publications

References 28 publications

Vortex Dynamic Properties of Vortex-Liquid Phase in YBa2Cu3O7-? Epitaxial Films

Vortex Dynamic Properties of Vortex-Liquid Phase in YBa2Cu3O7-? Epitaxial Films

EFFECT OF Ni SUBSTITUTION FOR Cu IN THE VORTEX STATE OF (Bi,Pb):2223 SUPERCONDUCTOR

Influence of Silicon Dioxide Doping on Morphology of Silicon Nanowires Grown by Floating Zone Method

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