Magnetic, electric and crystallographic properties of diluted magnetic InSe (1−x) Fe(Co) x semiconductor

El‐Sayed, Karimat; Sedeek, K.; Hantour, H.

doi:10.1016/j.jallcom.2012.03.099

Cited by 17 publications

(7 citation statements)

References 19 publications

(26 reference statements)

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“…The three-dimentional ε-polytype of InSe (space group 3ℎ 1 in Schoenflies notation) has been build using the lattice parameters a=3.9553 Ǻ, dM-M= 2.741 Ǻ, dX-X= 5.298 Ǻ and c=16.64 Ǻ and AB stacking [8][9][10][11][12][13] . These values are very closed to experimental ones and no influence of such a small difference is expected.…”

Section: Ab Initio Calculation Of Inse Band Structurementioning

confidence: 99%

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Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals

Henck

Pierucci

Zribi

et al. 2019

Phys. Rev. Materials

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Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Precise experimental determination of the electronic structure of InSe is sorely needed for better understanding of potential properties and device applications. Here, combining scanning tunneling spectroscopy (STS) and two-photon photoemission spectroscopy (2PPE), we demonstrate that InSe exhibit a direct band gap of about 1.25 eV located at the  point of the Brillouin zone (BZ). STS measurements underline the presence of a finite and almost constant density of states (DOS) near the conduction band minimum (CBM) and a very sharp one near the maximum of the valence band (VMB). This particular DOS is generated by a poorly dispersive nature of the top valence band, as shown by angle resolved photoemission spectroscopy (ARPES) investigation. In fact, a hole effective mass of about m*/m0 = -0.95 ( ̅̅̅̅ direction) was measured. Moreover, using ARPES measurements a spin-orbit splitting of the deeper-lying bands of about 0.35 eV was evidenced. These findings allow a deeper understanding of the InSe electronic properties underlying the potential of III−VI semiconductors for electronic and photonic technologies.

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Section: Ab Initio Calculation Of Inse Band Structurementioning

confidence: 99%

“…To date, a wide variety of 2D vdW crystals such as TMDs, and hexagonal boron nitride (hBN) have been investigated, and exploited as single crystals or in combination with graphene to create functional devices [12][13][14][15] .…”

mentioning

confidence: 99%

Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals

Henck

Pierucci

Zribi

et al. 2019

Phys. Rev. Materials

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“…The latter could not be avoided during measurements in spite of back-loading and fine grinding of samples. This preferred orientation is mainly due to the presence of the stacking layers aligned on the top of each other along the [0 0 ℓ] direction [30]. Fig.…”

Section: Structure and Microstructurementioning

confidence: 99%

First Investigation of Optical Properties and Local Structure of Gd3+ Doped Nano-Crystalline GeSe2

Hantour¹

2016

AJOP

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Pure and Gd-doped nano-crystalline GeSe 2 were prepared by the melt-quenching technique. The crystal structure, local structure and emission properties are investigated. Structure analysis using Rietveld program suggests monoclinic structure for both virgin and doped samples with nano-particle size 41nm for GeSe 2 and 48nm for Gd-doped sample. A wide optical band gap as estimated from absorbance measurements is 4.1ev and 4.8ev for pure and doped samples in accordance with the confinement effects. Raman spectra show two unresolved components at ~ 202 cm-1 with broad line width. Also, well identified low intensity (ʋ < 145 cm-1) and high intensity (ʋ > 250 cm-1) bands are detected. For Gd-doped sample, the main band is shifted to lower energies and its FWHM is reduced by ~ 50% accompanied by an intensity increase of about ~ 17 fold times. The photoluminescence analysis of the pure sample shows a main emission band at ~ 604 nm. This band is splitted into two separated bands with higher intensity. The detected emission bands at wavelength > 650 nm are assigned to transmission from 6 G J to the different 6 P J terms.

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“…Smaller crystallite size and higher root mean square strain were also obtained. It is known that defects such as stacking inside the materials which accordingly produce microstrains (28,29) . The higher value of < e g > for Fe/Co=2.72 reflects higher degree of defect concentration.…”

Section: Xrd Analysismentioning

confidence: 99%

Phase Formation and Crystallinity-Dependent Magnetic Parameters of Co1-xFe2+xO4 Nanoparticals

Eyssa¹

2015

AJPA

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Nano crystalline cobalt ferrite CoFe 2 O 4 powders were synthesized using the coprecipitation method. The effect of the calcination temperature and the Fe 3+ /Co 2+ molar ratio on the phase formation, macro and microstructure and magnetic properties was studied systematically. The Fe 3+ /Co 2+ was controlled to equal 2 and 2.75 while the annealing temperature (T a ) was adjusted to vary from 600 to 1000C o . the obtained powders were investigated using x-ray diffraction (XRD) analysis, Field emission scanning electron microscope (FESEM), Fourir transformation infrared spectroscopy (FTIR) and vibrating sample magnetometer (VSM). For both the Fe 3+ /Co 2+ ratios, the XRD results indicat the formation of well crystallized cubic spinel cobalt ferrite phase for the precursors annealed at 600C o up to 1000C o . However a second rhombohedral hematite phase whose content varies respectively from 3% and 15% was formed as the Fe 3+ /Co 2+ varied from 2 to 2.75 at T a =800 and 1000C o . The crystallite size (D β ) as determined applying the win-fit program was found also to decrease from 54.5 to 48.6nm accompanied by an increase of the root mean square strain < e g >. Using Rditveld analysis no effect on the value of the lattice parameter (a) was detected. The FESEM micrographs reveal the formation of highly agglomerated particles for Fe 3+ /Co 2+ =2.75 and T a =1000C o . The FTIR analysis confirm the formation of the spinel structure phase for both Fe 3+ /Co 2+ ratios at 1000C o , however the absorption bands shift to higher frequencies for Fe 3+ /Co 2+ =2.75. Other bands at 1663 and 3472cm -1 ascribed to free or absorbed water molecules were also detected for this ratio. The Fe 3+ /Co 2+ molar ratio was found to have a significant effect on the magnetic properties of the produced cobalt ferrite. The calculated magnetic parameters: the saturation magnetization (M S = 71.219emu/g), the coricivity (H C = 1443.8Oe) and the remanence ratio (M r /M S = 0.405) were recorded to decrease as the Fe 3+ /Co 2+ increases except for the curie temperature (T C ) which increase from 405 to 410C o .

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Magnetic, electric and crystallographic properties of diluted magnetic InSe (1−x) Fe(Co) x semiconductor

Cited by 17 publications

References 19 publications

Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals

Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals

First Investigation of Optical Properties and Local Structure of <br/>Gd<sup>3+</sup> Doped Nano-Crystalline GeSe<sub>2</sub>

Phase Formation and Crystallinity-Dependent Magnetic Parameters of Co1-xFe2+xO4 Nanoparticals

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Magnetic, electric and crystallographic properties of diluted magnetic InSe (1−x) Fe(Co) x semiconductor

Cited by 17 publications

References 19 publications

Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals

Evidence of direct electronic band gap in two-dimensional van der Waals indium selenide crystals

First Investigation of Optical Properties and Local Structure of &lt;br/&gt;Gd&lt;sup&gt;3+&lt;/sup&gt; Doped Nano-Crystalline GeSe&lt;sub&gt;2&lt;/sub&gt;

Phase Formation and Crystallinity-Dependent Magnetic Parameters of Co1-xFe2+xO4 Nanoparticals

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First Investigation of Optical Properties and Local Structure of <br/>Gd<sup>3+</sup> Doped Nano-Crystalline GeSe<sub>2</sub>