Magnetic domain wall neuron with intrinsic leaking and lateral inhibition capability

Magnetic domain walls: types, processes and applications

“…Further recent proposals of NN functions with DW motion include utilising magnetocrystalline anisotropy gradients [231] and by using width modulated wires [232], both of which modify the energy landscapes of DWs for propagation. The leaking action is provided by a resorting force which is induced by the modified energy landscape on a displaced DW.…”

“…The leaking action is provided by a resorting force which is induced by the modified energy landscape on a displaced DW. Brigner et al [231] (Type:Sim) suggest that by introducing anisotropy gradients in a 3-terminal MTJ device, DWs move from regions of higher to lower anisotropy without external stimuli which leads to a form of leaking action. Upon passing a current through the DW track, the DW movement causes the integration of the current response.…”

Unsupervised Competitive Hardware Learning Rule for Spintronic Clustering Architecture

“…Thus, the potential use of non-volatile spintronic analog devices that can be interconnected in a manner that enables on-chip unsupervised learning is particularly promising. In particular, spintronic domain-wall (DW) devices have been proposed as capable synapses [1] and neurons [2] and achieve a remarkable energy efficiency and reliability relative to competing non-volatile candidate devices such as resitive/filamentary memristive and phase-change memory (PCM) candidate devices for on-chip learning [3]. Recently, DW synaptic devices have been co-integrated with transistor learning circuits to show basic learning [4].…”