Magnetic Domain Wall Logic

Allwood, D. A.; Cowburn, R. P.

doi:10.1002/9783527628155.nanotech039

Cited by 196 publications

(270 citation statements)

References 32 publications

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“…Commonly, Ni-Fe alloys are subjected to magnetic field during their exploitation (by the magnetic field of the Earth) and in the laboratory experiments too (up to 50 T). Small magnetic fields are used at annealing of soft magnetic materials for generating the predefined modification of the local atomic environment and nanoscale domain structures [1,3,5,6,22,23].…”

Section: Resultsmentioning

confidence: 99%

“…Also, it was revealed that the magnetic field can change the morphology of the ferritic (α-Fe-C solid solution) grains in Fe-C alloys [20] as well as both the morphology and the roughness of the electrodeposited layers of a pure nickel and Ni-Fe alloys depending on the applied magnetic-field direction [21]. In Permalloy-type alloys, which have recently obtained their promising applications in both solid-state magnetic random access memory (MRAM) technology and magnetic logic [22,23], the applied magnetic fields are commonly exploited to form or switch the predefined local magnetic structures, to control the movement of static (Bloch or Néel) domain walls, and so forth. For such bulk crystal alloys, the recent Monte Carlo modelling predicts, for instance, the increase of the order-disorder phase-transformation temperature [24] when the applied magnetic field increases.…”

Section: Introductionmentioning

confidence: 99%

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Thermodynamics of f.c.c.-Ni–Fe Alloys in a Static Applied Magnetic Field

Vernyhora

Tatarenko

Bokoch

2012

ISRN Thermodynamics

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Within the scope of the self-consistent field and mean ("molecular") self-consistent field approximations, applying the static concentration wave method, the thermodynamics of f.c.c.-Ni-Fe alloys undergoing the static applied magnetic field effects is studied in detail. Under such conditions, the analytical corrections to expressions for the configuration-dependent part of free energy of macroscopically ferromagnetic L1 2 -Ni 3 Fe-type or L1 0 -NiFe-type ordering phases are taken into account. The obtained results for thermodynamically equilibrium states are compared with the refined phase diagram for f.c.c.-Ni-Fe alloys calculated recently without taking into account the applied magnetic field effects. Considering the specific character of microscopic structure of the magnetic and atomic orders in f.c.c.-Ni-Fe alloys, the changes of shape (and in arrangement) of order-disorder phase-transformation curves (Kurnakov points) are thoroughly analysed. A special attention is addressed to the investigation of the concentration, temperature, and magnetic-field induction-dependent atomic and magnetic long-range order parameters, especially, near their critical points. As revealed unambiguously, influence of a static applied magnetic field promotes the elevation of Kurnakov points for all the atomically ordering phases that is in an overall agreement with reliable experimental data. On the base of revealed phenomenon, the magneto external field analog-to-digital converter of the monochromatic radiations (X-rays or thermal neutrons) is hypothesized as a claim.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thermodynamics of f.c.c.-Ni–Fe Alloys in a Static Applied Magnetic Field

Vernyhora

Tatarenko

Bokoch

2012

ISRN Thermodynamics

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“…Popular approaches include passing a spin current through the soft layer to generate a spin transfer torque [2][3][4][5][6][7] or spin orbit torque [8][9][10][11] or domain wall motion [12][13] . Other approaches involve using voltage controlled magnetic anisotropy 14 , magnetoelectric effects [15][16][17] , magnetoionic effects 18 and magnetoelastic effects [19][20][21][22][23][24][25] .…”

mentioning

confidence: 99%

Experimental Demonstration of Complete 180° Reversal of Magnetization in Isolated Co Nanomagnets on a PMN–PT Substrate with Voltage Generated Strain

et al. 2017

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Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltagegenerated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in non-volatile magnetic memory has been hindered by the fundamental inability of stress/strain to rotate magnetization by full 180 o . Normally, stress/strain can rotate the magnetization of a shape anisotropic elliptical nanomagnet by only up to 90 o , resulting in incomplete magnetization reversal. Recently, we predicted that applying uniaxial stress sequentially along two different axes that are not collinear with the major or minor axis of the elliptical nanomagnet will rotate the magnetization by full 180 o [1]. Here, we demonstrate this complete 180 o rotation in elliptical Co-nanomagnets (fabricated on a piezoelectric substrate) at room temperature. The two stresses are generated by sequentially applying voltages to two pairs of shorted electrodes placed on the substrate such that the line joining the centers of the electrodes in one pair intersects the major axis of a nanomagnet at ~+30 o and the line joining the centers of the electrodes in the other pair intersects at ~ -30 o . A finite element analysis has been performed to determine the stress distribution underneath the nanomagnets when one or both pairs of electrodes are activated, and this has been approximately incorporated into a micromagnetic simulation of magnetization dynamics to confirm that the generated stress can produce the observed magnetization rotations. This result portends an extremely energy-efficient non-volatile "straintronic" memory technology predicated on writing bits in nanomagnets with electrically generated stress.Nanomagnets are the bedrock of non-volatile memory. A magnetic random access memory (MRAM) cell is implemented with a magneto-tunneling junction (MTJ) consisting of two nanomagnetic layers, one hard and one soft, separated by a spacer (tunneling) layer. The soft layer is often shaped like an elliptical disc which, if sufficiently thick, has two in-plane stable magnetization directions pointing in opposite directions along the major axis of the ellipse. They encode and store the binary bits 0 and 1. The stored bit * Corresponding author. E-mail: sbandy@vcu.edu is "read" by measuring the resistance of the MTJ which has two discrete values depending on the two magnetization orientations of the soft layer, i.e., for the two bits 0 and 1. "Writing" of bits is accomplished by switching the magnetization of the soft layer between the two anti-parallel directions of stable magnetization (180 0 rotation of the magnetization) with an external agent.There are many strategies to rotate the magnetization of the soft layer. Popular approaches include passing a spin current through the soft layer to generate a spin transfer torque 2-7 or spin orbit torque [8][9][10][11] or domain wall motion [12][13] . Other approaches involve using voltage controlled magnetic anisotropy 14 , magnetoelectric effects 15-17 ...

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“…spin, shows promise for surpassing the development limits of CMOS logic. [2][3][4][5][6][7][8][9][10][11][12][13][14][15] Especially, due to the compatibility with conventional charge-based device, magnetic logic in magnetoelectronics arouses profound attentions. [5][6][7][8][9][10][11][12][13][14][15] Benefit from the extra dimension of spin, magnetic logic has the attractive features of reconfigurable logic operation and built-in non-volatile memory.…”

Section: Introductionmentioning

confidence: 99%

Magnetic logic based on diode-assisted magnetoresistance

Luo

Zhang

2017

AIP Advances

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Conventional computer suffers from the von Neumann performance bottleneck due to its hardware architecture that non-volatile memory and logic are separated. The new emerging magnetic logic coupling the extra dimension of spin, shows the potential to overcome this performance bottleneck. Here, we propose a novel category of magnetic logic based on diode-assisted magnetoresistance. By coupling Hall effect and nonlinear transport property in silicon, all four basic Boolean logic operations including AND, NAND, OR and NOR, can be programmed at room temperature with high output ratio in one silicon-based device. Further introducing anomalous Hall effect of magnetic material into magnetic logic, we achieve perpendicular magnetic anisotropy-based magnetic logic which combines the advantages of both high output ratio (>103 %) and low work magnetic field (∼1 mT). Integrated with non-volatile magnetic memory, our logic device with unique magnetoelectric properties has the advantages of current-controlled reconfiguration, zero refresh consumption, instant-on performance and would bridge the processor-memory gap. Our findings would pave the way in magnetic logic and offer a feasible platform to build a new kind of magnetic microprocessor with potential of high performance.

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Magnetic Domain Wall Logic

Cited by 196 publications

References 32 publications

Thermodynamics of f.c.c.-Ni–Fe Alloys in a Static Applied Magnetic Field

Thermodynamics of f.c.c.-Ni–Fe Alloys in a Static Applied Magnetic Field

Experimental Demonstration of Complete 180° Reversal of Magnetization in Isolated Co Nanomagnets on a PMN–PT Substrate with Voltage Generated Strain

Magnetic logic based on diode-assisted magnetoresistance

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