Magnetic correlations in Ho<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Tb<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Ti<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml

Chang, Liang; Schweika, W.; Kao, Ying-Jer; Chou, Yang-Zhi; Perßon, J.; Brückel, T.; Yang, Hong-Chang; Chen, Y. Y.; Gardner, J. S.

doi:10.1103/physrevb.83.144413

Cited by 17 publications

(18 citation statements)

References 36 publications

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“…In agreement with the results for the continuum model (see Sec. II B) and previous studies [56][57][58], the real repulsive potential leads to the resonance peak in the DOS at small ω (see the left panel of Fig. 4) and allows for the formation of the trigonal-shaped LDOS structure in the vicinity of the impurity presented in the right panel of Fig.…”

Section: B Hexagonal Lattice With a Single Impuritysupporting

confidence: 71%

“…1(a). As it is well known for graphene [53][54][55][56][57][58], the presence of impurities with a strong potential reshapes the DOS and allows for the formation of resonance states for |ω| < v F Λ. With the increase of the potential strength, the corresponding peak moves to smaller frequencies and becomes sharper.…”

Section: B Impurity Resonances and Density Of Statesmentioning

confidence: 94%

“…On the other hand, the DOS in Dirac systems has the characteristic linear (2D) or quadratic (3D) dependence on energy and vanishes in a Dirac point. This results in the creation of the resonance peak near a minimum in the DOS [53][54][55][56][57][58]. The other hallmark feature of impurity resonances is the specific pattern of the local DOS (LDOS), whose trigonal form was observed via the scanning tunneling microscopy (STM) in graphene [59][60][61][62].…”

Section: Introductionmentioning

confidence: 99%

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Non-Hermitian impurities in Dirac systems

Sukhachov

Balatsky

2020

Phys. Rev. Research

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Quasiparticle states in Dirac systems with complex impurity potentials are investigated. It is shown that an impurity site with loss leads to a nontrivial distribution of the local density of states (LDOS). While the real part of defect potential induces a well-pronounced peak in the density of states (DOS), the DOS is either weakly enhanced at small frequencies or even forms a peak at the zero frequency for a lattice in the case of non-Hermitian impurity. As for the spatial distribution of the LDOS, it is enhanced in the vicinity of impurity but shows a dip at a defect itself when the potential is sufficiently strong. The results for a two-dimensional hexagonal lattice demonstrate the characteristic trigonal-shaped profile for the LDOS. The latter acquires a double-trigonal pattern in the case of two defects placed at neighboring sites. The effects of non-Hermitian impurities could be tested both in photonic lattices and certain condensed matter setups. * pavlo.sukhachov@su.se † avb@nordita.org

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Section: B Hexagonal Lattice With a Single Impuritysupporting

confidence: 71%

Section: B Impurity Resonances and Density Of Statesmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

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Non-Hermitian impurities in Dirac systems

Sukhachov

Balatsky

2020

Phys. Rev. Research

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“…It thus becomes a crucial tasks is to learn how to control the behavior of electrons in topological insulators using electric fields. Various research concerning this issue have been done in the literature [8][9][10][11][12][13][14][15][16][17][18][19]. If the edges where the edges states localize can be created by electric voltage gates, namely, carriers in the system can be confined spatially by electric potential, it would greatly enhance the utilization of topological insulators as a building block of future devices.…”

Section: Introductionmentioning

confidence: 99%

Efficiency of electrical manipulation in two-dimensional topological insulators

Pang¹,

Wu²

2014

Chinese Phys. B

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We investigate the efficiency of electrical manipulation on two-dimensional topological insulators by considering a lateral potential superlattice on the system. The electronic states under various conditions are examined carefully. It is found that the dispersion of the mini-band and the electron distribution in the potential well region display an oscillatory behavior as the potential strength of the lateral superlattice increases. The probability of finding an electron in the potential well region can be larger or smaller than the average as the potential strength varies. This indicates that the electric manipulation efficiency on two-dimensional topological insulators is not as high as expected, which should be carefully considered in designing a device application that bases on two-dimensional topological insulators. These features can be attributed to the coupled multiple-band nature of the topological insulator model. In addition, it is also found that these behaviors are not sensitive to the gap parameter of the two-dimensional topological insulator model.

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“…11 There are also investigations concerning the probing and tuning of transport property of edge states, e.g., via a quantum point contact and via an artificially implemented charge puddle. [12][13][14] In this paper, we propose another mechanism to tune/control the transport property of edge states in a 2DTI. The idea behind this mechanism is simple.…”

mentioning

confidence: 99%

Electron-Elastic-Wave Interaction in a Two-Dimensional Topological Insulator

2016

Chinese Phys. Lett.

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The interaction between an electron and an elastic wave is investigated for HgTe and InAs-GaSb quantum wells. The well-known Bernevig-Hughes-Zhang model, i.e., the 4 × 4 model for a two-dimensional (2D) topological insulator (TI), is extended to include terms that describe the coupling between the electron and the elastic wave. The influence of this interaction on the transport properties of the 2DTI and of the edge states is discussed. As the electron-like and hole-like carriers interact with the elastic wave differently due to the cubic symmetry of the 2DTI, one may utilize the elastic wave to tune/control the transport property of charge carriers in the 2DTI. The extended 2DTI model also provides the possibility to investigate the backscattering of edge states of a 2DTI more realistically.PACS numbers: 73.21. Fg, 78.20.Ls, 78.30.Fs, 78.67.De When a two-dimensional (2D) topological insulator (TI) has a boundary with a normal insulator or vacuum, it is predicted theoretically that there exist gapless edge states. 1-3 The existence of such edge states have been confirmed experimentally. 4-7 When the system is time reversal invariant, these edge states will not be affected by an elastic back scattering center. 1-3 Thus, one has a transport channel for the charge carriers, i.e., the information carriers, with no energy dissipation, and this will be of great application importance in the information technology.

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Magnetic correlations in HoxTb2−xTi

Cited by 17 publications

References 36 publications

Non-Hermitian impurities in Dirac systems

Non-Hermitian impurities in Dirac systems

Efficiency of electrical manipulation in two-dimensional topological insulators

Electron-Elastic-Wave Interaction in a Two-Dimensional Topological Insulator

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