Magnetic camera for visualizing magnetic fields of home appliances

Tuan, Bui Anh; Souza-Daw, Anthony de; Phuong, Hoang Minh; Hoang, Thang Manh; Dzung, Nguyen Tien

doi:10.1109/cce.2014.6916732

Cited by 3 publications

(1 citation statement)

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“…Likewise, three different loads such as semiconductive, resistive, and inductive were selected to explore possible functioning variations generated by their distinct nature and voltage requirements. It was decided to use the ALS31001LUAATN three-pin linear analog output manufactured by Allegro Microsystems since its reliability and robustness were proven in previous research projects [40][41] [42]. Furthermore, according to recent experiments using Transphorm's GaN transistors [43][44][45], TP65H150G4PS 650 V, 13 A and TP65H050WS 650 V, 36 A have been found to be most suitable for this study's testing.…”

Section: Methodsmentioning

confidence: 99%

GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration

Marsic,

Faramehr,

Fleming

et al. 2024

IEEE Access

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Wide bandgap Gallium Nitride (GaN) technology promises to deliver the next generation of power transistors capable of high energy density and compact design integration however, without active monitoring high failing rates are recorded due to its instability to design parameter variations. Moreover, the electromagnetic (EM) radiofrequency (RF) emissions due to GaN power switching require extra design resources. Considering the extensive research area dedicated to galvanic isolated magnetic sensors for GaN wafer monolithic integration with usage in power monitoring, this study investigates the conditions that a Hall sensor is required to meet when operating in close proximity of a GaN transistor. Through considerable experimental testing, it was determined that the sensor requires a magnetic field starting from ±1 mT when interfaced with a microcontroller. Additionally, since the GaN transistor's EM RF switching noise was one of the most monitored parameters during the experiments, it was discovered that it is proportional to the transistor's current transfer area whereas its magnitude is due to electrical current required by the load. As a result of these findings, the EM radiated switching noise may apply to all electrical switches and provide a significant advantage when designing for EM compatibility (EMC).

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Section: Methodsmentioning

confidence: 99%