Magnetic breakdown and Landau-level spectra of a tunable double-quantum-well Fermi surface

Harff, N. E.; Simmons, J. A.; Lyo, S. K.; Klem, J.F.; Boebinger, G. S.; Pfeiffer, L. N.; West, K. W.

doi:10.1103/physrevb.55.r13405

Cited by 33 publications

(18 citation statements)

References 3 publications

(6 reference statements)

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“…The overall nature of this behavior is the suppression by B || of the connection between layers of DQW. This effect cannot be represented within quasiclassical description [4,5]. Similar behavior was also observed in GaAs/AlGaAs DQW [6], but without calculations.…”

Section: Introductionsupporting

confidence: 55%

Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Yakunin¹,

Visser²,

Galistu³

et al. 2009

J. Phys.: Conf. Ser.

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Development of quantum Hall peculiarities due to mobility gap between spin-split magnetic levels with addition of the parallel magnetic field component B || is analyzed in double quantum wells (DQW) created in InGaAs/GaAs and InAs/AlSb heterosystems chosen due to their relatively large bulk g-factors. In InGaAs/GaAs DQWs, the nonmonotonous behavior of these peculiarities is observed and explained within single-electron approach in terms of competition between enhanced spin splitting and localization of electrons in the layers of DQW with increased B ||. In InAs/AlSb DQW, the tunneling connection between the layers is very weak due to high barrier, nevertheless the collective odd-numbered peculiarities are revealed that exist due to spontaneous interlayer phase coherence. B || destroys these states that is manifested, in particular, in the suppression of the peculiarity for filling factor ν = 3.

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Section: Introductionsupporting

confidence: 55%

Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Yakunin¹,

Visser²,

Galistu³

et al. 2009

J. Phys.: Conf. Ser.

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“…The in-plane resistivity σx of an imbalanced bilayer in tilted magnetic fields was measured in Ref. [26]. The oscillations originating from the areas S1 and S2 can probably be found in the Fourier spectrum shown in Fig.…”

mentioning

confidence: 91%

“…4 of Ref. [26]. However, this paper focused only on the SdH oscillations originating from closed orbits, but not on the interference oscillations from parallel orbits.…”

mentioning

confidence: 99%

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Angular magnetoresistance oscillations in bilayers in tilted magnetic fields

Yakovenko

Cooper

2006

Physica E: Low-dimensional Systems and Nanostructures

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Angular magnetoresistance oscillations (AMRO) were originally discovered in organic conductors and then found in many other layered metals. It should be possible to observe AMRO to semiconducting bilayers as well. Here we present an intuitive geometrical interpretation of AMRO as the Aharonov-Bohm interference effect, both in real and momentum spaces, for balanced and imbalanced bilayers. Applications to the experiments with bilayers in tilted magnetic fields in the metallic state are discussed. We speculate that AMRO may be also observed when each layer of the bilayer is in the composite-fermion state.

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“…Athω c ≈ ∆ 12 , the electron spectrum undergoes a transition between these two regimes through magnetic breakdown. [16][17][18][19][20][21][22][23][24] In this transition regime MISO with odd quantum number k terminate, while MISO corresponding to even k evolve continuously into the high-field regime corresponding tohω c ≫ ∆ 12 . The observed results are found in an excellent agreement with the theory 22 considering the wide quantum well as two parallel 2D electron systems coupled by a tunneling with an amplitude t 0 through a barrier of width d. The observed complex behavior of MISO in the tilted magnetic field was quantitatively understood in the terms of the entanglement of the orbital electron motion in different subbands induced by in-plane magnetic field.…”

Section: Introductionmentioning

confidence: 99%

Quantum electron transport in magnetically entangled subbands

2017

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Transport properties of highly mobile 2D electrons in symmetric GaAs quantum wells with two populated subbands placed in titled magnetic fields are studied at high temperatures. Quantum positive magnetoresistance (QPMR) and magneto-intersubbands resistance oscillations (MISO) are observed in quantizing magnetic fields, B ⊥ , applied perpendicular to the 2D layer. QPMR displays contributions from electrons with considerably different quantum lifetimes, τ (1,2) q , confirming the presence of two subbands in the studied system. MISO evolution with B ⊥ agrees with the obtained quantum scattering times only if an additional reduction of the MISO magnitude is applied at small magnetic fields. This indicates the presence of a yet unknown mechanism leading to MISO damping. Application of in-plane magnetic field produces a strong decrease of both QPMR and MISO magnitude. The reduction of QPMR is explained by spin splitting of Landau levels indicating g-factor, g ≈0.4, which is considerably less than the g-factor found in GaAs quantum well with a single subband populated. In contrast to QPMR the decrease of MISO magnitude is largely related to the in-plane magnetic field induced entanglement between quantum levels in different subbands that, in addition, increases the MISO period.

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Magnetic breakdown and Landau-level spectra of a tunable double-quantum-well Fermi surface

Cited by 33 publications

References 3 publications

Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Evolution of the spin-split quantum Hall states with magnetic field tilt in the InAs-based double quantum wells

Angular magnetoresistance oscillations in bilayers in tilted magnetic fields

Quantum electron transport in magnetically entangled subbands

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