Magnetic Behavior of Surface Nanostructured 50-nm Nickel Thin Films

Abstract

Thermally evaporated 50-nm nickel thin films coated on borosilicate glass substrates were nanostructured by excimer laser (0.5 J/cm2, single shot), DC electric field (up to 2 kV/cm) and trench-template assisted technique. Nanoparticle arrays (anisotropic growth features) have been observed to form in the direction of electric field for DC electric field treatment case and ruptured thin film (isotropic growth features) growth for excimer laser treatment case. For trench-template assisted technique; nanowires (70–150 nm diameters) have grown along the length of trench template. Coercive field and saturation magnetization are observed to be strongly dependent on nanostructuring techniques.

Opto-spintronics in InP using ferromagnetic tunnel spin filters

“…The spin filter effect in the InP/ oxide/Ni tunnel structures is directly proportional to the perpendicular induction of the FM Ni contact. Indeed, when reducing the external perpendicular induction field, the curves of the spin asymmetry resemble the out-ofplane magnetization behavior of polycrystalline Ni films as reported in literature [39,40]. At = ⊥ H 0, the magnetization of the FM Ni relaxes to in-plane domains due to its shape anisotropy, and the observable asymmetry  H ( )vanishes.…”

Dependency of tunneling magneto-resistance on Fe insertion-layer thickness in Co2Fe6B2/MgO-based magnetic tunneling junctions

“…In particular, a chemical mechanical planarization (CMP) process was conducted for the TiN bottom electrode to decrease the surface roughness to less than 2 Å , which is extremely important to ensure the crystalline linearity of the CFB free layer. 31,32 An amorphous Ta (a-Ta) layer of 5-nm thickness was used as a seed layer because it absorbs B diffused from the CFB free layer during ex-situ annealing. Moreover, its amorphous state is helpful for obtaining a well-textured bcc (100) orientation of a p-MTJ in spite of the polycrystalline TiN electrode.…”

Atomic Layer Deposition of Nickel Nitride Thin Films using NiCl2(TMPDA) and Tert‐Butylhydrazine as Precursors

“…Nickel thin films find use in a myriad of applications ranging from microelectronics to protective coatings and catalysis . Alongside Co and Ru, Ni is one of the possible candidates to replace Cu as the dominant conductor material in future interconnects on integrated circuits .…”

“…Fully‐silicided (FUSI) Ni gates provide an alternative for TiSi 2 and CoSi 2 gates in complementary metal oxide semiconductors (CMOS) . Owing to its ferromagnetic properties, Ni is a pivotal material in the development of magnetic memories . Spin‐transfer torque random‐access memories (STT‐RAMs), for example, are faster and exhibit higher durability and energy efficiency than the memories we use today .…”