Magnetic anisotropy of Co on Cu(1 1 17)

Wulfhekel, Wulf; Knappmann, S.; Oepen, Hans Peter

doi:10.1063/1.360884

Cited by 42 publications

(13 citation statements)

References 25 publications

(28 reference statements)

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“…In addition, the separation of the K u in a volume contribution and an interface one is, generally, questionable for a few ML thick films, 40 but also throughout the whole thickness of certain thicker films, as, for instance, in the case of Ni on Cu͑001͒. 41 Another factor which may obscure the linear dependence is the departure of the actual magnetization saturation from the bulk value due to the different film structure and chemical environment in ultrathin films.…”

Section: Magnetic Characterizationmentioning

confidence: 98%

Growth and magnetic properties of Fe films on InP(001)

2002

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An investigation of the InP͑001͒ surface and the characterization of thin Fe films grown on this substrate at Ϸ150 and Ϸ300 K are presented. As substrates, highly ordered P-rich (2ϫ4) reconstructed surfaces obtained by Ar ϩ ion bombardment at Ϸ570 K were used. The growth of Fe films in the submonolayer thickness range and the magnetic properties of thin Fe films grown on P-rich (2ϫ4) InP͑001͒ are reported. We observe a uniaxial in-plane magnetic anisotropy up to an Fe thickness of Ϸ14 monolayers, which is related to the uniaxial character of the InP͑001͒ reconstruction. From the magnetization behavior we obtained the surface/ interface contribution to the uniaxial anisotropy, and deduced that very small, if any, magnetically dead layers form at the interface. Auger electron spectroscopy data reveal that about one monolayer of In segregates to the top of the growing Fe film at Ϸ300 K, but does not support a strong Fe-InP͑001͒ intermixing, in contrast to the current belief. The current-voltage characterization of patterned Fe films grown on n-InP͑001͒ shows nonrectifying contacts at room temperature.

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Section: Magnetic Characterizationmentioning

confidence: 98%

Growth and magnetic properties of Fe films on InP(001)

2002

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“…[8][9][10] In the context of ultrathin-film magnetism, unidirectional Kerr hysteresis loops have been observed for stepped Co surfaces: Co/Cu͑1117͒ films vicinal to fcc ͑001͒ exhibit an unambiguous but unexplained unidirectional shift of order 1 mT. 11,12 Although nonferromagnetic spin structures cannot be ruled out in low-symmetry 3d films, 13 it is not possible to ascribe the observed loops to the well-known exchange between ferromagnetic and antiferromagnetic phases as in Co/CoO.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the unidirectional shift of the hysteresis loops is most pronounced if the field is parallel rather than perpendicular to the steps. 11,12 …”

Section: Co/cu"11n… Surfacesmentioning

confidence: 99%

“…͑4͒ with the behavior of fcc (11n) surfaces vicinal to fcc ͑001͒. 11,12,[22][23][24] Figure 4 shows the atomic structure of fcc (11n) surfaces, which involve four types of atoms: bulk atoms, surface atoms, step-edge atoms, and step-corner atoms. 22 Since there are no second-order bulk contributions, we have to deal with N s surface atoms, N c step-corner atoms, and N e step-edge atoms.…”

Section: Co/cu"11n… Surfacesmentioning

confidence: 99%

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Unidirectional anisotropy in ultrathin transition-metal films

1998

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Unidirectional magnetic anisotropies in low-symmetry magnetic thin films such as cobalt on vicinal copper surfaces are investigated. Possible explanations of the observed uniaxial anisotropies are competing anisotropy ͑CA͒ coefficients and Dzyaloshinskii-Moriya ͑DM͒ interactions. Unidirectional CA is an interesting mechanism occurring in low-symmetry magnets and involves neither antiferromagnetic exchange nor spin canting. It is visible in the easy-cone regime and decides, for example, whether the preferential magnetization direction points up or down a stepped surface. In the case of Co/Cu(11n) films, however, the anisotropy direction speaks in favor of DM-type interactions. ͓S0163-1829͑98͒03541-3͔

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“…Experiments have been demonstrated that surface induces an in-plane uniaxial magnetic anisotropy in variety of magnetic films grown on SC substrate. [6] As the thickness of layer is reduced, their properties are expected to be strongly influenced by surface and interfaces, which are inevitably rough at atomic scales.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Intrinsic Stress and Transport Properties of Fe/P-Si (001) Schottky Heterojunction

Sarkar¹,

Bhaumik²,

Adhikari³

et al. 2014

Int. J. Adv. App. Phy. Res.

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We present a comprehensive study on the growth morphology, the electrical and magnetic transport properties of thin iron (Fe) film on p-Si(100) substrate. The structural analysis revealed the growth of an amorphous Fe film, with low crystalline ordering and granular structure. The resistivity of the film was observed to deviate from the usual metallic behavior at lower temperature revealing a tunneling type conductance. This was also reflected in the magnetoresistance measurement of the film. The film show high positive (negative) magnetoresistance at all temperatures (below 10 K) on application of out-of-plane (in-plane) magnetic field. The current-voltage (I-V) measurement of Fe/p-Si Schottky heterojunction exhibits good rectifying property. The ideality factor (n) and Schottky barrier height b () of the device, at room temperature, were obtained from fitting the I-V curves. The carrier concentration of the semiconductor substrate was evaluated from the capacitance-voltage (C-V) measurements. From the measurements large deviation from the ideal value of the diode parameters was observed. All the results thus obtained show a strong correlation between the stress and the transport measurements.

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Magnetic anisotropy of Co on Cu(1 1 17)

Cited by 42 publications

References 25 publications

Growth and magnetic properties of Fe films on InP(001)

Growth and magnetic properties of Fe films on InP(001)

Unidirectional anisotropy in ultrathin transition-metal films

Investigation of Intrinsic Stress and Transport Properties of Fe/P-Si (001) Schottky Heterojunction

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