Magnetic Anisotropy Dispersion in FeCo Films

Mathieu, C.; Inturi, V. R.; Hadley, Matthew

doi:10.1109/tmag.2008.917265

Cited by 10 publications

(11 citation statements)

References 15 publications

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“…21,46,61 On the other hand, many studies have been performed for the purpose of analyzing the magnetization reversal mechanism in individual ferromagnetic films, including magnetic alloy films. 20,22,26,28,36,42,44,45,49,51,52,55,57 Hereby, many works have been focused on alloys made from 4d/5d transition metals and 3d elemental ferromagnets 14,26,42,49 or alloys of 4f elements with 3d elemental ferromagnets. 17,22,55 These types of alloys, besides having other interesting features, can lead to large magnetocrystalline anisotropies 14 as well as to unconventional magnetic phase transitions as a function of temperature.…”

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confidence: 99%

Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

Idigoras

Suszka

Vavassori

et al. 2014

Journal of Applied Physics

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This work studies the influence of crystallographic alignment onto magnetization reversal in partially epitaxial Co films. A reproducible growth sequence was devised that allows for the continuous tuning of grain orientation disorder in Co films with uniaxial in-plane anisotropy by the controlled partial suppression of epitaxy. While all stable or meta-stable magnetization states occurring during a magnetic field cycle exhibit a uniform magnetization for fully epitaxial samples, non-uniform states appear for samples with sufficiently high grain orientation disorder. Simultaneously with the occurrence of stable domain states during the magnetization reversal, we observe a qualitative change of the applied field angle dependence of the coercive field. Upon increasing the grain orientation disorder, we observe a disappearance of transient domain wall propagation as the dominating reversal process, which is characterized by an increase of the coercive field for applied field angles away from the easy axis for well-ordered epitaxial samples. Upon reaching a certain disorder threshold level, we also find an anomalous magnetization reversal, which is characterized by a non-monotonic behavior of the remanent magnetization and coercive field as a function of the applied field angle in the vicinity of the nominal hard axis. This anomaly is a collective reversal mode that is caused by disorder-induced frustration and it can be qualitatively and even quantitatively explained by means of a two Stoner-Wohlfarth particle model. Its predictions are furthermore corroborated by Kerr microscopy and by Brillouin light scattering measurements.

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confidence: 99%

Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

Idigoras

Suszka

Vavassori

et al. 2014

Journal of Applied Physics

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“…The Cr/CoFe film has a hard axis coercivity of 28 Oe. Since underlayer material has an extensive impact on magnetic layers [24], a significant difference in magnetic hysteresis between four types of underlayers was investigated. The reason for coercivity reduction with the NiFe underlayer can be explained by the fact that NiFe itself is a great contributor to the magnetic properties of the system [24].…”

Section: Resultsmentioning

confidence: 99%

“…Since underlayer material has an extensive impact on magnetic layers [24], a significant difference in magnetic hysteresis between four types of underlayers was investigated. The reason for coercivity reduction with the NiFe underlayer can be explained by the fact that NiFe itself is a great contributor to the magnetic properties of the system [24]. It is suggested that the improvement of soft magnetic properties with nonmagnetic underlayers is caused by texture chance and grain size reduction which can be seen in XRD analyses below.…”

Section: Resultsmentioning

confidence: 99%

“…Overall, according to GI-XRD results, it is not hard to say that film texture is tailored by underlayers. Despite all, the underlying cause is not completely understood and is still under investigation [24].…”

Section: Resultsmentioning

confidence: 99%

“…A pre-clean process including bias plasma (at a 20-200 mTorr pressure) was applied to all Si wafers for 40 s at a 40 W dc sputter power. The preclean process is generally sufficient to remove [20][21][22][23][24][25][26][27][28][29][30] angstroms of surface atoms of Si. The CoFe layer and underlayers were sputtered in the same chamber without breaking vacuum with the help of a 6-target sputtering system.…”

Section: Experimental Studymentioning

confidence: 99%

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Underlayer effect on structural and magnetic properties of Co<sub>90</sub>Fe<sub>10</sub> thin films

Cakmaktepe¹,

Coskun²,

Yıldız³

2013

Lith. J. Phys.

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In the present study, the single layer Co 90 Fe 10 and X/Co 90 Fe 10 (X = Cu, Cr, Au, Ni 80 Fe 20 ) double layer films were investigated. Films were fabricated by DC magnetron sputtering at room temperature on Si substrates. In order to improve the soft magnetic properties of CoFe films, four different underlayers were examined. The coercivity values of the films were obtained by using a laboratory design magneto-optic Kerr effect (MOKE) magnetometry. Magnetic force microscopy and x-ray diffraction results show that the crystalline structure and magnetic domains of CoFe films are sensitive to the initial layer. It was seen that the soft magnetic properties of CoFe films were improved with underlayers. Particularly, the Au underlayer was effective in reducing coercivity H c from 37 to 5 Oe.

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Magnetization recoil-curve overshoot and interaction plots in Co thin films

Geshev

Andrade

2022

Journal of Magnetism and Magnetic Materials

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Magnetic Anisotropy Dispersion in FeCo Films

Cited by 10 publications

References 15 publications

Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

Magnetization reversal of in-plane uniaxial Co films and its dependence on epitaxial alignment

Underlayer effect on structural and magnetic properties of Co<sub>90</sub>Fe<sub>10</sub> thin films

Magnetization recoil-curve overshoot and interaction plots in Co thin films

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