Magnetic anisotropy and low-field magnetic phase diagram of the quasi-two-dimensional ferromagnet 
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Selter, S.; Bastien, Gäel; Wolter, A. U. B.; Aswartham, Saicharan; Büchner, B.

doi:10.1103/physrevb.101.014440

Cited by 36 publications

(21 citation statements)

References 51 publications

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“…[9]. As-grown single crystals were thoroughly characterized by powder x-ray diffraction and energy dispersive x-ray spectroscopy; both agree well with the crystal structure in the R3 space group as well as with the expected stoichiometry of Cr 2 Ge 2 Te 6 [12].…”

Section: Samples and Methodssupporting

confidence: 60%

Pressure control of the magnetic anisotropy of the quasi-two-dimensional van der Waals ferromagnetCr2Ge2Te6

et al. 2021

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Section: Samples and Methodssupporting

confidence: 60%

Pressure control of the magnetic anisotropy of the quasi-two-dimensional van der Waals ferromagnetCr2Ge2Te6

et al. 2021

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“…Interestingly, we observed that the maximal T * C increase by mechanical strain was as much as 2.5 ± 0.6 K at ∆ ≈ 0.016%. This is comparable to what was previously achieved in bulk CGT by applying an out-of-plane magnetic field of 0.7 − 1 T [2,8], proving that strainbased nanomechanical methods provide a compelling route for controlling and probing magneto-elastic coupling in ferromagnetic 2D layers and heterostructures.…”

supporting

confidence: 80%

“…In contrast to many other 2D layered ferromagnetic compounds [4], CGT exhibits inter-and intra-layer ferromagnetic coupling for any number of layers [2]. Recent progress has been made in manipulating the magnetic order of CGT using electrostatic gating [6,7], magnetic field [2,8], pressure [9,10], ion intercalation [11] and via spin-orbit torque [12,13]. However, an experimental coupling of magnetic order to mechanical strain in thin CGT was left unattended, since strain in thin layers is conventionally a difficult parameter to control.…”

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confidence: 99%

Nanomechanical probing and strain tuning of the Curie temperature in suspended Cr$_2$Ge$_2$Te$_6$ heterostructures

Šiškins¹,

Kurdi²,

Lee³

et al. 2021

Preprint

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Two-dimensional (2D) magnetic materials with strong magnetostriction, like Cr2Ge2Te6 (CGT), provide opportunities for tuning their magnetic state with potential applications in spintronic and magneto-mechanical devices. However, realizing this potential requires understanding their mechanical properties, such as the Young's modulus, and the ability to controllably strain the magnets and monitor their ferromagnetic Curie temperature TC on a device level. In this work, we suspend thin CGT layers to form nanomechanical membrane resonators. We then probe the mechanical and magnetic properties of CGT as a function of temperature and strain by static and dynamic nanomechanical methods. Pronounced signatures of magneto-elastic coupling are observed in the temperature-dependent resonance frequency of these membranes at the TC. We further utilize CGT in heterostructures with thin WSe2 and FePS3 layers to control the strain in CGT flakes and quantitatively probe the transition temperatures of all materials involved. In addition, an enhancement of TC by 2.5 ± 0.6 K in CGT is realized by electrostatic force straining the heterostructure of 0.016% in the absence of an external magnetic field. Nanomechanical strain thus offers a compelling degree of freedom to probe and control magnetic phase transitions in 2D layered ferromagnets and heterostructures.

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“…The saturation magnetization of Cr 2 Ge 2 Te 6 (3.24 μ B /Cr) thin film is consistent with the reported value (≈ 3.1 μ B /Cr) for bulk single crystal and thin films. [23,43,44] However, Cr 2 Si 2 Te 6 (1.02 μ B /Cr) had a saturation magnetization slightly lower than that of the bulk single crystal (≈ 2.86 μ B /Cr). [45,46] The exact reason for this lower saturation magnetization of Cr 2 Si 2 Te 6 thin film needs further investigation, since, there is no reference data for magnetization of Cr 2 Si 2 Te 6 thin film.…”

Section: Crystal Structure and Magnetic Characterization Of The Thin Filmmentioning

confidence: 98%

Large‐Area Epitaxial Film Growth of van der Waals Ferromagnetic Ternary Chalcogenides

Giri

Kumar

et al. 2021

Advanced Materials

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non-vdW crystals (such as Mn 3 Si 2 Te 6, [12,13] ) has led to an interesting arena for studying fundamental 2D magnetism and provided numerous opportunities for 2D magnetic, magnetoelectric, and magnetooptic applications. [14,15] Electrical control of both charge and spin degrees of freedom in 2D ferromagnetic semiconductors is an important step in creating novel spintronic devices. As a single integrated platform, the spintronic devices based on these materials are expected to complement or outperform (in some cases) the conventional semiconductor-based devices. [16] However, compared to binary 2D metal chalcogenides, synthesis of ternary 2D metal chalcogenides is far more challenging, so the proof-of-concept studies on the magnetoelectric phenomena of the ferromagnetic ternary 2D metal chalcogenides have been performed on thin flakes mechanically exfoliated from bulk crystals. [9,17] There have been limited reports on the synthesis of ferromagnetic 2D ternary metal chalcogenide thin films. [18,19] The synthesis from pure elemental mixtures in an evacuated quartz ampule at 900-1100 °C through the self-flux of elements took 5-20 days. [7,13,17,20] Only two types of thin films have been synthesized via molecular beam epitaxy (MBE) in an ultra-high vacuum condition. [21][22][23] Very recently, a few CVD-based synthesis have been reported for binary 2D metal chalcogenide magnetic crystals such as CrSe and FeTe. [24,25] However, to the best of our knowledge, the conventional CVD-based and Following the first experimental realization of intrinsic ferromagnetism in 2D van der Waals (vdW) crystals, several ternary metal chalcogenides with unprecedented long-range ferromagnetic order have been explored. However, the synthesis of large-area 2D ternary metal chalcogenide thin films is a great challenge, and a generalized synthesis has not been demonstrated yet. Here, a quick and scalable synthesis of epitaxially aligned ferromagnetic ternary metal chalcogenide thin films (Cr 2 Ge 2 Te 6 , Cr 2 Si 2 Te 6 , Mn 3 Si 2 Te 6 ) is reported. The synthesis is based on the flux-controlled surface diffusion of Te on metal (Cr, Mn)-deposited wafer (Ge, Si) substrates. Magnetic anisotropy study of the epitaxial ternary thin films reveals the intrinsic magnetic easy axis; out-of-plane direction for Cr 2 Ge 2 Te 6 and Cr 2 Si 2 Te 6 , and in-plane direction for Mn 3 Si 2 Te 6 . In addition to the synthesis, this work creates an opportunity for transfer-free device fabrication for realizing magnetoelectronics based on the electrical control of both charge and spin degrees of freedom in 2D ferromagnetic semiconductors.

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Magnetic anisotropy and low-field magnetic phase diagram of the quasi-two-dimensional ferromagnet Cr2Ge2Te6

Cited by 36 publications

References 51 publications

Pressure control of the magnetic anisotropy of the quasi-two-dimensional van der Waals ferromagnetCr2Ge2Te6

Pressure control of the magnetic anisotropy of the quasi-two-dimensional van der Waals ferromagnetCr2Ge2Te6

Nanomechanical probing and strain tuning of the Curie temperature in suspended Cr$_2$Ge$_2$Te$_6$ heterostructures

Large‐Area Epitaxial Film Growth of van der Waals Ferromagnetic Ternary Chalcogenides

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