Magnetic anisotropy and ferroelectric-driven magnetic phase transition in monolayer Cr2Ge2Te6

Liu, Wen-Rong; Dong, Xiao-Jing; Lv, Ye-zhu; Ji, Wei-xiao; Cao, Qiang; Wang, Pei-Ji; Liu, Feng; Chang-wen, Zhang

doi:10.1039/d1nr05821e

Cited by 34 publications

(23 citation statements)

References 81 publications

(106 reference statements)

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“…The corresponding MAE and MCA is −13.2 meV and −5.029 erg/cm 2 , respectively, and the negative MAE implies EA of Mn 2 Ge 2 Te 6 points to the in-plane direction, as shown in Figure d. Compared with CGT (MAE bulk = 0.5 meV, MAE monolayer = 0.142 meV), , the magnetic anisotropy of Mn 2 Ge 2 Te 6 is obviously reinforced. The enhancement of Mn 2 Ge 2 Te 6 ’s MAE origins Mn atom (54.938) is heavier than Cr atom (51.996).…”

Section: Results and Discussionmentioning

confidence: 91%

“…However, the Cr atoms contribute 0.06 (0.03 × 2) meV, Te atoms contribute 0.12 (0.03 × 4) and −0.050 (−0.025 × 2) meV to the total MAE of CGT ML. 61 Therefore, the MAE of Mn 2 Ge 2 Te 6 is much larger than CGT. The hybridization between d yz and d z 2 of Mn's orbital make positive contribution to MAE, which corresponds to the matrix difference of 3 for d orbitals, shown in Table 1.…”

Section: Resultsmentioning

confidence: 94%

“…In addition, Te atoms of Mn 2 Ge 2 Te 6 contribute −11.76 (2.94 × 4), −12.3 (−6.15 × 2) meV to total MAE, while the Mn and Ge atoms’ contribution could be ignorable. However, the Cr atoms contribute 0.06 (0.03 × 2) meV, Te atoms contribute 0.12 (0.03 × 4) and −0.050 (−0.025 × 2) meV to the total MAE of CGT ML . Therefore, the MAE of Mn 2 Ge 2 Te 6 is much larger than CGT.…”

Section: Results and Discussionmentioning

confidence: 97%

See 2 more Smart Citations

Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn₂Ge₂Te₆ Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy

et al. 2022

J. Phys. Chem. C

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Mn2Ge2Te6 shows intrinsic ferromagnetic (FM) order, with a Curie temperature (T c) of 316 K. The FM order origins from superexchange interaction between Mn and Te atoms. Mn2Ge2Te6 is half-metal (HM), and spin-β electron is a semiconductor with a gap of 1.462 eV. Mn2Ge2Te6 tends to show in-plane anisotropy (IPA), with a magnetic anisotropy energy (MAE) of −13.2 meV/f.u. Mn2Ge2Te6 shows good dynamical and thermal stability. Moreover, Mn2Ge2Te6 presents good ferromagnetic and half-metallic stability under charge doping. The carrier doping could effectively tune magnetic and electronic properties. Specifically, the magnetic moment, exchange parameter, and MAE could be efficiently tuned. The total magnetic moment changes linearly with charge doping. The magnetic exchange parameters could be controlled by the doping carriers. The carrier doping could modulate MAE to −18.4 (+0.4 e), −0.85 (−1.6 e), and 1.31 (−2.4 e) meV/f.u., by changing hybridization between Te atom’s p y and p z orbitals. Mn2Ge2Te6 with intrinsic ferromagnetism, high tunable MAE, good stability of ferromagnetism, and half-metallicity could help researchers to investigate its wide application in electronics and spintronics.

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Section: Results and Discussionmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 94%

Section: Results and Discussionmentioning

confidence: 97%

See 1 more Smart Citation

Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn₂Ge₂Te₆ Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy

et al. 2022

J. Phys. Chem. C

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“…Hence, spin degeneracy for ML-AFM hinders the VAHE. By introducing the vdW interaction, − we construct a bilayer structured MoSi 2 N 4 /MnPS 3 HTS to break P T symmetry. The valley spin splitting in K/K′ valleys can be realized without the protection of P T symmetry …”

Section: Resultsmentioning

confidence: 99%

Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi₂N₄/MnPS₃ Heterostructure

Dong

Jia

et al. 2023

ACS Appl. Electron. Mater.

Self Cite

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Two-dimensional (2D) antiferromagnetic (AFM) heterostructures (HTSs) have broad application prospects since they offer a stray-free field, robustness against magnetic perturbations, and faster spin dynamics, but how to effectively control valley polarization with an AFM substrate is still an issue. Here spin−valley physical coupling in monolayers of MoSi 2 N 4 and AFM MnPS 3 is due to spin−orbit coupling and the absence of inversion symmetry, which made broad application prospects of spin and valley in novel 2D materials. Spontaneous valley polarization in MoSi 2 N 4 /MnPS 3 HTS has been confirmed by using the first-principles calculations and low-energy effective Hamiltonian models. We reveal that its Neél temperature calculated by Monte Carlo simulation is about 340 K above room temperature, which is higher than many 2D AFM materials. The magnetic proximity phenomenon caused by interfacial orbital hybridization is gradually strengthened thanks to the reduction of the distance between the two layers, and valley splitting of the MoSi 2 N 4 /MnPS 3 HTS is calculated to be Δ K−K′ = 9.15 meV. Our computational results offer a basis for the valley polarization in an intrinsic AFM HTS and a practical approach to design and utilize valleytronics devices.

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“…[ 9,10 ] Owing to these advantages, stacking 2D magnets onto vdW heterostructures can further advance applications. [ 11,12 ] However, common 2D magnets, such as CrI 3 , [ 13,14 ] Cr 2 Ge 2 Te 6 , [ 15,16 ] and Fe 3 GeTe 2 , [ 17 ] with low magnetic transition temperatures, air instability, and poor transport properties are unfavorable for current technological developments and device design. The vdW‐layered semiconductor CrSBr has a large magnetic moment and semiconducting transport properties.…”

Section: Introductionmentioning

confidence: 99%

In Situ TEM Observation of Electron‐Beam‐Induced Microstructural Evolution in van der Waals Layered Magnetic CrSBr Semiconductor

Deng

Tseng

Lee

et al. 2022

Adv Elect Materials

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CrSBr is a recently developed 2D van der Waals (vdW) magnet. However, this development is still in its infancy, and hence, there has been limited relevant research so far. In this study, ultrathin CrSBr is first prepared via blue‐tape‐based mechanical exfoliation. Subsequently, Raman and X‐ray photoelectron spectroscopy analyses are performed to obtain detailed information on the chemical structure. The thickness of most exfoliated samples measured using atomic force microscopy (AFM) is ≈1.6–6.5 nm corresponding to 2–8 layers. Notably, high‐resolution images of CrSBr atomic structures are seldom observed using transmission electron microscopy (TEM). Atomic‐thick CrSBr is extremely beam‐sensitive, and hence, it is easily damaged under e‐beam irradiation. Nevertheless, e‐beam damage provides an opportunity to study the structural properties of CrSBr. Different types of knock‐on effects are recorded and further analyzed using atomic‐scale imaging. Furthermore, the high‐resolution TEM images show that the unique atomic stepped boundary is consistent with the orthorhombic slip system. The recrystallization process of CrSBr and the formation/refilling of the nanoholes are recorded via in situ TEM. These findings deepen the understanding of the fundamental insight into 2D vdW magnetic semiconductors and pave the way for next‐generation spin‐based electronics.

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Magnetic anisotropy and ferroelectric-driven magnetic phase transition in monolayer Cr₂Ge₂Te₆

Abstract: Monolayer Cr2Ge2Te6 (ML-CGT) has attracted broad interest due to its novel electronic and magnetic properties. However, there are still controversies on the origin of its intrinsic magnetism. Here, we systematically...

Cited by 34 publications

References 81 publications

Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn₂Ge₂Te₆ Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy

Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn₂Ge₂Te₆ Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy

Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi₂N₄/MnPS₃ Heterostructure

In Situ TEM Observation of Electron‐Beam‐Induced Microstructural Evolution in van der Waals Layered Magnetic CrSBr Semiconductor

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Magnetic anisotropy and ferroelectric-driven magnetic phase transition in monolayer Cr2Ge2Te6

Abstract: Monolayer Cr2Ge2Te6 (ML-CGT) has attracted broad interest due to its novel electronic and magnetic properties. However, there are still controversies on the origin of its intrinsic magnetism. Here, we systematically...

Cited by 34 publications

References 81 publications

Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn2Ge2Te6 Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy

Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn2Ge2Te6 Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy

Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi2N4/MnPS3 Heterostructure

In Situ TEM Observation of Electron‐Beam‐Induced Microstructural Evolution in van der Waals Layered Magnetic CrSBr Semiconductor

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Product

Resources

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Magnetic anisotropy and ferroelectric-driven magnetic phase transition in monolayer Cr₂Ge₂Te₆

Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn₂Ge₂Te₆ Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy

Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn₂Ge₂Te₆ Monolayer, High Curie Temperature, Large Magnetic Crystal Anisotropy

Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi₂N₄/MnPS₃ Heterostructure