Magnetic and transport properties of epitaxial stepped Fe3O4(100) thin films

Wu, Han; Syrlybekov, Askar; Mauit, Ozhet; Mouti, Anas; Coileáin, Cormac Ó; Abid, Muhammad; Abid, Mohamed; Shvets, I. V.

doi:10.1063/1.4897001

Cited by 12 publications

(14 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, high density APBs will be formed at the step edges [32][33][34] and the density of APBs at the step edges should be more than 50% higher than that on the terrace, which is consistent with our experimental observation, as the V ON SW for devices with four contacts in the AS configuration is almost 50% greater than for devices with four contacts in the PS configuration. Therefore, high density APBs will be formed at the step edges [32][33][34] and the density of APBs at the step edges should be more than 50% higher than that on the terrace, which is consistent with our experimental observation, as the V ON SW for devices with four contacts in the AS configuration is almost 50% greater than for devices with four contacts in the PS configuration.…”

Section: Discussionsupporting

confidence: 89%

“…A voltage is applied to the source lead with the drain grounded, and the current passing through the channel is measured. 32 Here, to clearly distinguish the origin of the anisotropic switching, we measured the resistive switching behavior in Fe 3 O 4 films with large thicknesses where the APBs effect on the long-range charge-orbital ordering is weaker as the distance between APBs or APB domain size increases with increasing film thickness. 2a shows a scanning electron microscopy (SEM) image of a typical device with four probe contacts in a PS configuration, where the electrical field is applied along the steps.…”

Section: Rs In Magnetitementioning

confidence: 99%

“…However, the exact physics behind this is unclear. [30][31][32] It has been experimentally suggested that when Fe 3 O 4 thin films are epitaxially grown on stepped and vicinal substrate surfaces, 32-34 a high density of anti-phase boundaries (APBs) [35][36][37][38] will be formed along the step edges. 27 Therefore, an electrical field-driven metalinsulator transition through modification of the Verwey transition can be ruled out.…”

mentioning

confidence: 99%

See 2 more Smart Citations

Electrical-field-driven metal–insulator transition tuned with self-aligned atomic defects

Syrlybekov

Mauit

et al. 2015

Nanoscale

Self Cite

View full text Add to dashboard Cite

Recently, significant attention has been paid to the resistance switching (RS) behaviour in Fe3O4 and it was explained through the analogy of the electrically driven metal-insulator transition based on the quantum tunneling theory. Here, we propose a method to experimentally support this explanation and provide a way to tune the critical switching parameter by introducing self-aligned localized impurities through the growth of Fe3O4 thin films on stepped SrTiO3 substrates. Anisotropic behavior in the RS was observed, where a lower switching voltage in the range of 10(4) V cm(-1) is required to switch Fe3O4 from a high conducting state to a low conducting state when the electrical field is applied along the steps. The anisotropic RS behavior is attributed to a high density array of anti-phase boundaries (APBs) formed at the step edges and thus are aligned along the same direction in the film which act as a train of hotspot forming conduits for resonant tunneling. Our experimental studies open an interesting window to tune the electrical-field-driven metal-insulator transition in strongly correlated systems.

show abstract

Section: Discussionsupporting

confidence: 89%

Section: Rs In Magnetitementioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Electrical-field-driven metal–insulator transition tuned with self-aligned atomic defects

Syrlybekov

Mauit

et al. 2015

Nanoscale

Self Cite

View full text Add to dashboard Cite

show abstract

“…Through detailed high resolution cross-sectional TEM investigations, we observed that the films possess the epitaxial relationship with the substrate and step-terrace periodicity propagated through the entire thickness [11,14]. Magnetization studies of Fe3O4 films on vicinal MgO revealed an in-plane uniaxial magnetic anisotropy induced by step-edges with an easy axis along the PSE direction for temperatures above the Verwey transition [19]. Whereas, for temperatures below the Verwey transition there was a transition of easy axis from PSE to SE, which was also found to be thickness dependent.…”

Section: Resultsmentioning

confidence: 95%

Influence of Miscut Angle on the Magnetoresistance Behavior of Epitaxial Fe3O4 Thin Films Grown on Vicinal Substrates

Arora¹,

Shvets²

2018

JNST

View full text Add to dashboard Cite

This present work reported here the influence of miscut angle of vicinal MgO (100) substrates (with miscut angle between 1-5� along <011> direction) on the magnetoresistance (MR) behavior of epitaxial magnetite (Fe3O4) films. By varying the miscut angle, we are able to control the step-terrace periodicity of the substrate surface, which allows us to tailor the density of the step-edges induced antiphase boundaries, APBs (nanoscale liner defects formed during growth due to coalescence of neighbouring domains), in epitaxial Fe3O4 films. We found that the contribution from the step-edges induced APBs to the magnetoresistance (MRSE) in Fe3O4 films increases with increase in miscut (up to 2�) and decreases for larger miscut angles. From temperature dependent studies, we observed that the magnitude of MRSE increased with decrease in temperature and peaks at the Verwey transition. The decrease in MRSE for larger miscut samples is attributed to the influence of APB strain-fields on the degree of spin-polarization of Fe3O4 regions on terraces.

show abstract

“…Prior annealing in a tube furnace, samples were treated in an ultrasonic bath using acetone, methanol, and high purity isopropanol. Further details on the dependence of the final template structure on annealing conditions has been previously published . The anneal conditions and properties of templates used in this study are summarized in Table .…”

Section: Methodsmentioning

confidence: 99%

Formation of plasmonic nanoparticle arrays –rules and recipes for an ordered growth

Fleischer

Ualibek

Verre

et al. 2015

Physica Status Solidi (b)

Self Cite

View full text Add to dashboard Cite

We review a self-assembled growth method for plasmonic nanoparticle arrays, based on glancing angle deposition. We produced ordered Ag, Au, and Cu nanoparticle arrays over large areas on different stepped oxide templates. Precise control over the final geometry can be difficult and we provide recipes to obtain macroscopically ordered structures. We discuss the influence of the adsorbate diffusion length and facet termination on the shape and size distributions of metallic nanoparticle arrays and show that an increased ad-atom mobility leads to more regular arrays of spherical nanoparticles. We also show how in-situ Reflectance Anisotropy Spectroscopy (RAS) can be used to extract indirect information on the nucleation and ripening the nanoparticles, as well as measure the plasmonic resonance.Schematics of the RAS setup used to in-situ monitor the growth of plasmonic nanoparticle arrays on stepped oxide templates.

show abstract

Magnetic and transport properties of epitaxial stepped Fe3O4(100) thin films

Cited by 12 publications

References 43 publications

Electrical-field-driven metal–insulator transition tuned with self-aligned atomic defects

Electrical-field-driven metal–insulator transition tuned with self-aligned atomic defects

Influence of Miscut Angle on the Magnetoresistance Behavior of Epitaxial Fe3O4 Thin Films Grown on Vicinal Substrates

Formation of plasmonic nanoparticle arrays –rules and recipes for an ordered growth

Contact Info

Product

Resources

About