Magnetic and transport properties of III–V diluted magnetic semiconductor Ga1−xCrxAs

Saito, H.; Zaets, W.; Akimoto, R.; Ando, Koji; Mishima, Yoshitsugu; Tanaka, Masaaki

doi:10.1063/1.1359475

Cited by 42 publications

(28 citation statements)

References 7 publications

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“…As Table 2 shows, the metals except Cr can energetically replace Ga in GaAs; while for Cr, it has been confirmed by experiment [25] that Cr is on substitutional lattice sites of Ga. Therefore, the impurity atom can be put on substitutional lattice site of Ga. Figure 1 shows a zinc blende structure (Ga,Mn)As model.…”

Section: Resultssupporting

confidence: 59%

Local electronic structure and magnetic properties of 3d transition metal doped GaAs

Lin

Duan

2008

Sci. China Ser. G-Phys. Mech. As

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The local electronic structure and magnetic properties of GaAs doped with 3d transition metal (Sc, Ti, V, Cr, Mn , Fe, Co, Ni) were studied by using discrete variational method (DVM) based on density functional theory. The calculated result indicated that the magnetic moment of transition metal increases first and then decreases, and reaches the maximum value when Mn is doped into GaAs. In the case of Mn concentration of 1.4%, the magnetic moment of Mn is in good agreement with the experimental result. The coupling between impure atoms in the system with two impure atoms was found to have obvious variation. For different transition metal, the coupling between the impure atom and the nearest neighbor As also has different variation.diluted magnetic semiconductor, density functional theory, 3d transition metal, cluster model, electronic structure Modern electronic devices utilize the charge degree of freedom of electrons to process information in semiconductors and the spin degree of freedom to store information in magnetic materials.If both the charge and spin of electrons can be combined, we may be able to accomplish mass storage and information processing at the same time. In this way the performance of electronic devices will be enhanced. In general, semiconductors used for integrated circuits, such as GaAs and GaN, do not contain magnetic ions and are nonmagnetic. Some magnetic elements can be doped into non-magnetic semiconductors (GaN, GaAs) to make them magnetic. This category of semiconductors is called diluted magnetic semiconductors (DMS).DMS has been thought to be of scientific and technological importance in exploring new physics and new functionality toward future electronics. In 1998, Ohno [1] and co-workers successfully introduced Mn into nonmagnetic GaAs host, and they found this material had a Curie temperature as high as 110 K. Their work has aroused intense interest in the study of DMS.In this research, the local electronic structure and magnetic properties of GaAs doped with 3d transitional metals were studied by using cluster models, and the calculated results were compared

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Section: Resultssupporting

confidence: 59%

Local electronic structure and magnetic properties of 3d transition metal doped GaAs

Lin

Duan

2008

Sci. China Ser. G-Phys. Mech. As

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“…2 in the figure is a fit to the data using s ¼ s 1 exp½ÀðT 1 =TÞ 1=2 ; with s 1 ¼ 104 S cm À1 and T 1 ¼ 1720 K: This type of T dependence of the conductivity, also observed in (Ga,Cr)As [10,17], together with the low mobility of the films can be related to hopping conduction [10,12] or to tunnelling between conducting regions in granular metals [10]. The large value of T 1 obtained from our data is consistent with a mechanism in which holes hop between localised Cr and/or Mn states extending over an energy range of $0.2 eV.…”

Section: Resultsmentioning

confidence: 93%

“…Carrier hopping or tunnelling between conducting regions have been proposed as possible conduction mechanisms at low temperatures in this system. While some evidence of ferromagnetic coupling between Cr ions has been observed in (Ga,Cr)As at low temperatures [11], the magnetisation curves have characteristics of superparamagnetic behaviour [12].…”

Section: Introductionmentioning

confidence: 99%

Electrical characterisation of (Ga,Mn,Cr)As thin films grown by molecular beam epitaxy

Ibáñez

Edmonds

Henini

et al. 2005

Journal of Crystal Growth

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“…In this contrast, thin films of Cr-doped GaAs with doping concentration, x = 0.10 were grown by Saito et al [13] using LT-MBE method and studied the magnetic and transport properties. Abe et al [14] at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit

Saini

Singh

Reshak

et al. 2012

Journal of Alloys and Compounds

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Magnetic and transport properties of III–V diluted magnetic semiconductor Ga1−xCrxAs

Cited by 42 publications

References 7 publications

Local electronic structure and magnetic properties of 3d transition metal doped GaAs

Local electronic structure and magnetic properties of 3d transition metal doped GaAs

Electrical characterisation of (Ga,Mn,Cr)As thin films grown by molecular beam epitaxy

Emergence of half metallicity in Cr-doped GaP dilute magnetic semiconductor compound within solubility limit

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