The electrical resistance of a diffusive ferromagnet with magnetic domain walls is studied theoretically, taking into account the spatial dependence of the magnetization. The semiclassical domain wall resistance is found to be either negative or positive depending on the difference between the spindependent scattering lifetimes. The predictions can be tested experimentally by transport studies in doped ferromagnets. PACS numbers: 75.60.Ch, 73.50.Bk, A domain wall (DW) is the region between two ferromagnetic domains in which the direction of the magnetization rotates. A number of experiments have been conducted which show either an increase [1][2][3] or a decrease [4][5][6][7][8] of the resistance due to DWs compared to the resistance of a single-domain ferromagnet. These experiments have been done on thin films, structured thin films, and membranes in the diffusive transport regime, where the electron mean free path is shorter than the typical system size.In the diffusive limit, Cabrera and Falicov [9] calculated an increase of the resistance caused by the backreflection of electrons by the domain wall. The reflection probability was found to be exponentially small in the ratio of the DW width to the Fermi wavelength. An increase of the semiclassical resistance has also been predicted by Tatara and Fukuyama [10] by linear response calculations assuming spin-independent relaxation times. Levy and Zhang [11] obtained the DW resistance from a Boltzmann equation. They showed that spin-dependent relaxation times can enhance this positive DW resistance, depending on the ratio of relaxation times of the majority and minority spin electrons. Brataas et al. [12] calculated the domain wall resistance generalizing the approach of Tatara and Fukuyama to include spin-dependent lifetimes with qualitatively similar results to Levy and Zhang.The only intrinsic mechanism which explains a decrease of the resistance has been proposed by Tatara and Fukuyama [10], viz., the destruction of electron weak localization by the dephasing, caused by the domain wall, decreases the resistance. However, experimentally, the negative domain wall resistance persists up to relatively high temperatures [5,6], where localization does not play a role. Kent et al. [6] explain the negative DW resistance by an extrinsic effect: reduced surface scattering.It is the purpose of this Letter to show that the semiclassical DW resistance of diffusive ferromagnets can be negative as well as positive when the electronic structure of the domain wall is taken into account semiclassically. where m is the mass of the electron, e is the charge of an electron, n 1 ͑n 2 ͒ is the density of spin-up (spin-down) electrons, and t 1 ͑t 2 ͒ is the scattering relaxation time for the spin-up (spin-down) electrons which at low temperatures depends on the (spin-dependent) impurity potential and (spin-dependent) density of states. A redistribution of the electrons between the spin-up and spin-down bands (i.e., a change in magnetization) modifies the resistivity when t 1 fi ...