Magnetic‐ and Spin‐Gapless‐Related Transport Properties in Sputtered Mn₂CoGa Thin Films

Abstract

Spin‐gapless semiconductors (SGS) are highly attractive for spintronics applications due to their unique spin‐polarized band structure. In this study, we focus on the potential SGS candidate of Mn2CoGa alloy by growing thin films using magnetron sputtering on Si(001)/SiO2 substrates. By applying appropriate heat treatment, the Mn2CoGa thin films can crystallize into the expected Heusler structure, as confirmed by the dominant (220) peak observed in XRD. These films exhibited soft magnetized behavior, with a saturation magnetization of approximately 1.86 μ B /f.u. at 10K. This value deviated slightly from the theoretical prediction, indicating the presence of antisite disorder within the film. The resistivity curve showed a negative temperature coefficient, which was attributed to the strong electron‐electron interaction that is also connected to the disorder. Despite the presence of disorder, positive variation and sign reversal of the magnetoresistance were observed, along with a nearly vanishing anomalous Hall effect, both of which are typical characteristics of SGS. Compared to bulk Mn2CoGa, the carrier concentration was larger and the mobility was lower in the film, while similar temperature dependences were observed.This article is protected by copyright. All rights reserved.