2016
DOI: 10.1016/j.jmmm.2015.11.055
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Magnetic and magnetoresistive properties of Fe10Ni90/Tb–Co films with modified interlayer interface

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Cited by 7 publications
(3 citation statements)
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“…However, polycrystalline films of these materials have relatively low induced magnetic anisotropy [4], which is the reason for high magnetic hysteresis. This issue can be solved by introduction of an additional exchange coupled antiferromagnetic [12] of ferromagnetic [13] layer -the source of unidirectional magnetic anisotropy. The presence of the strong exchange coupling was demonstrated to effect strongly both magnetic anisotropy and hysteresis properties of the ferromagnetic layer [13].…”
Section: Films Of Fe 10mentioning
confidence: 99%
See 1 more Smart Citation
“…However, polycrystalline films of these materials have relatively low induced magnetic anisotropy [4], which is the reason for high magnetic hysteresis. This issue can be solved by introduction of an additional exchange coupled antiferromagnetic [12] of ferromagnetic [13] layer -the source of unidirectional magnetic anisotropy. The presence of the strong exchange coupling was demonstrated to effect strongly both magnetic anisotropy and hysteresis properties of the ferromagnetic layer [13].…”
Section: Films Of Fe 10mentioning
confidence: 99%
“…This issue can be solved by introduction of an additional exchange coupled antiferromagnetic [12] of ferromagnetic [13] layer -the source of unidirectional magnetic anisotropy. The presence of the strong exchange coupling was demonstrated to effect strongly both magnetic anisotropy and hysteresis properties of the ferromagnetic layer [13]. In this work, elastomagnetoresistive properties of Fe 10 Ni 90 and Co 20 Ni 80 free layers as well as FeMn/Fe 10 Ni 90 and FeMn/Co 20 Ni 80 with unidirectional anisotropy were investigated.…”
Section: Films Of Fe 10mentioning
confidence: 99%
“…The compounds with almost equal magnetizations of sub-lattices at a given temperature and high perpendicular anisotropy are of particular interest for MRAM spintronic applications [10,11]. It is well known, that TbCo and TbFe layers with perpendicular anisotropy can be used to induce exchange bias in the adjoining hard or soft magnetic material in both out-of-plane [11,12] and in-plane directions [13,14].…”
Section: Introductionmentioning
confidence: 99%