Magnetic and magneto-transport properties of ZnO:Ni films

Wakano, T.; Fujimura, Norifumi; Morinaga, Yasunori; Abe, Nobuto; Ashida, Atsushi; Itô, Taichiro

doi:10.1016/s1386-9477(01)00095-9

Cited by 225 publications

(120 citation statements)

References 5 publications

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“…%͒ doped ZnO exhibited superparamagnetic behavior. Such superparamagnetic behavior has also been reported for ZnO:Ni thin films above 30 K. 16 Ferromagnetic behavior decreases with further increase in Li concentration in ZnO lattice. VSM has magnetization measurement sensitivity on the order of 10 −6 emu, while our experimental results show magnetization on the order of 10 −3 emu.…”

Section: Resultssupporting

confidence: 69%

Room-temperature ferromagnetism in Li-dopedp-type luminescent ZnO nanorods

2009

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We have observed ferromagnetism in Li-doped ZnO nanorods with Curie temperature up to 554 K. Li forms shallow acceptor states in substitutional zinc sites giving rise to p-type conductivity. An explicit correlation emerges between increase in hole concentration with decrease in magnetization and Curie temperature in ZnO:Li. Occurrence of ferromagnetism at room temperature has been established with observed magnetic domain formation in ZnO:Li pellets in magnetic force microscopy and prominent ferromagnetic resonance signal in electron paramagnetic resonance spectrum. Magnetic ZnO:Li nanorods are luminescent, showing strong near UV emission. Substitutional Li atoms can induce local moments on neighboring oxygen atoms, which when considered in a correlated model for oxygen orbitals with random potentials introduced by dopant atom could explain the observed ferromagnetism and high Curie temperature in ZnO:Li nanorods.

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Section: Resultssupporting

confidence: 69%

Room-temperature ferromagnetism in Li-dopedp-type luminescent ZnO nanorods

2009

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“…>300-350K [29,30] --->300K [30,32] 2 K [83] -4 (10) 2002 ---45K [33] >300K with Co [88] 550K with Cu [89] >350K [62,64] >300K with Fe [88] with Fe [89] 5 (10) 2003 --->r.t.…”

Section: Resultsmentioning

confidence: 99%

Magnetic oxide semiconductors

Fukumura

Toyosaki

Yamada

2005

Semicond. Sci. Technol.

214

107

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Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO 2 and transition metal-doped ZnO is discussed.

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“…Sato 2 and co-workers performed band structure calculations in the framework of the local density approximation ͑LDA͒, and suggested that for V, Cr, Fe, Co, and Ni dopants, ferromagnetic ordering in ZnO is favored without additional charge carriers. For films doped with 3-25 at % Ni, ferromagnetism was observed at 2 K. 5 Ferromagnetic behavior with T c higher than 350 K was found in V-doped ZnO films fabricated by pulsed laser deposition. 6 As to Co-doped ZnO, a few papers appeared recently, [7][8][9][10][11] but the results are controversial.…”

Section: Introductionmentioning

confidence: 98%

Structural and magnetic properties of insulating Zn1−xCoxO thin films

Yin

Chen

Chai

et al. 2004

Journal of Applied Physics

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Cobalt-doped ZnO (Zn 1Ϫx Co x O) thin films were fabricated by reactive magnetron cosputtering. The processing conditions were carefully designed to avoid the occurrence of Co precipitations. The films are c-axis oriented, and the solubility limit of Co in ZnO is less than 17%, determined by x-ray diffraction. X-ray photoemission spectroscopy measurements show Co ions have a chemical valance of 2ϩ. In this paper, hysteresis loops were clearly observed for Zn 1Ϫx Co x O films at room temperature. The coercive field, as well as saturation magnetization per Co atom, decreases with increasing Co content, within the range of 0.07ϽxϽ0.17. Most intriguing, the Zn 1Ϫx Co x O films are nonconductive as x is no more than 17%. Our results clearly demonstrate that ferromagnetism can be realized in Zn 1Ϫx Co x O without carrier incorporation.

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Magnetic and magneto-transport properties of ZnO:Ni films

Cited by 225 publications

References 5 publications

Room-temperature ferromagnetism in Li-dopedp-type luminescent ZnO nanorods

Room-temperature ferromagnetism in Li-dopedp-type luminescent ZnO nanorods

Magnetic oxide semiconductors

Structural and magnetic properties of insulating Zn1−xCoxO thin films

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