At submonolayer coverage, Mn forms atomic wires on the Si(001) surface oriented perpendicular to the underlying Si dimer rows. While many other elements form symmetric dimer wires at room temperature, we show that Mn wires have an asymmetric appearance and pin the Si dimers nearby. We find that an atomic configuration with a Mn trimer unit cell can explain these observations due to the interplay between the Si dimer buckling phase near the wire and the orientation of the Mn trimer. We study the resulting four wire configurations in detail using high-resolution scanning tunneling microscopy (STM) imaging and compare our findings with STM images simulated by density functional theory.The large magnetic moment related to a half-filled d-shell renders Mn atoms attractive building blocks for fascinating magnetic nanostructures [1][2][3]. Tunable ferromagnetism in Mn-doped semiconductors has been achieved for GaAs,. For silicon this effort has not been as successful because of strong segregation and the interstitial diffusion of Mn in the Si crystal during overgrowth or annealing, even though Mn implanted Si samples exhibit very high Curie temperatures [8]. During submonolayer deposition at room temperature (RT) however, Group III (Al, Ga, In), Group IV (Sn, Pb) and a few other metals (e.g. Sb and Mg) are known to form 1D wires perpendicular to the Si dimer rows on the Si(100)-2×1 surface [9][10][11][12][13][14][15][16][17]. These wires consist of metal atoms in the parallel-dimer configuration linking up to form atomic chains [18][19][20]. Recent experiments show that similar wire formation occurs for Mn [21]. Density functional theory (DFT) calculations proposed several possible structures for these wires [22][23][24] with one, two or three Mn atoms per Si dimer row [see Fig. 1(a)].We show that high-resolution STM imaging at RT reveals a unique appearance of Mn wires. In contrast to other metal wires, their signature is characterized by the pinning of nearby Si dimers in addition to two independent asymmetric realizations of the Mn wire. We find that only an extended trimer model can explain our findings and identify a total of four wire configurations based on the relative orientation of the Si dimers and an asymmetric Mn trimer unit cell. We confirm our model using a sequence of STM images, where we observe sequential changes of the Si dimer and Mn trimer configuration. Our results are important for the successful integration of Mn atoms into future silicon spintronics devices.The filled-state STM image in Fig. 1(b) shows Mn wires near a step edge of the Si(001) surface. Here, about a tenth of a monolayer of Mn was deposited at RT with a rate of 55 pm/min. The wires, with typical lengths ranging from 5 nm to 50 nm, frequently nucleate at defect sites or step edges, where clustering of Mn wires is observed (dashed ellipse). This reflects the high mobility of Mn on the Si(001) surface at RT [21]. Even at these low-temperature growth conditions, a number of larger clusters are found (dashed circles). In the following...