2020
DOI: 10.1103/physrevmaterials.4.094203
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Magnetic and electronic properties of a topological nodal line semimetal candidate: HoSbTe

Abstract: We report the experimental and theoretical studies of a magnetic topological nodal line semimetal candidate HoSbTe. Single crystals of HoSbTe are grown from Sb flux, crystallizing in a tetragonal layered structure (space group: P4/nmm, no. 129), in which the Ho-Te bilayer is separated by the square-net Sb layer. The magnetization and specific heat present distinct anomalies at ~ 4 K related to an antiferromagnetic (AFM) phase transition. Meanwhile, with applying magnetic field perpendicular and parallel to the… Show more

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Cited by 21 publications
(23 citation statements)
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References 39 publications
(55 reference statements)
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“…1(a) and (b) display the temperature dependent resistivity ρ(T ) and magnetization χ(T ), respectively. Although we have measured ρ(T ) and χ(T ) up to a higher temperature, there is not much difference with the previous report [22]: ρ(T ) shows a broad hump around 200 K and χ(T ) follows the Curie-Wiess law down to at least 100 K; an antiferromagnetic phase transition occurs at around 4 K. In order to check if there are any other phase transitions that may lead to the "insulator to metal" change inferred by resistivity, the first-order derivatives dρ(T )/dT and dχ(T )/dT are calculated and displayed in the inset of Fig. 1(a) and (b), respectively.…”
Section: Methodscontrasting
confidence: 89%
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“…1(a) and (b) display the temperature dependent resistivity ρ(T ) and magnetization χ(T ), respectively. Although we have measured ρ(T ) and χ(T ) up to a higher temperature, there is not much difference with the previous report [22]: ρ(T ) shows a broad hump around 200 K and χ(T ) follows the Curie-Wiess law down to at least 100 K; an antiferromagnetic phase transition occurs at around 4 K. In order to check if there are any other phase transitions that may lead to the "insulator to metal" change inferred by resistivity, the first-order derivatives dρ(T )/dT and dχ(T )/dT are calculated and displayed in the inset of Fig. 1(a) and (b), respectively.…”
Section: Methodscontrasting
confidence: 89%
“…Among these WHM materials HoSbTe was theoretically predicted to be a weak topological insulator [22], which is corroborated afterwards by angle-resolved photoemission spectroscopy (ARPES) experiments exhibiting energy gaps much larger than 200 meV along certain momentum directions [23]. However the temperature dependent resistivity of HoSbTe exhibits a broad hump-like feature at around 200 K, indicating a bad-metal-like state at low temperatures, the underlying physics of which is yet to be revealed [22].…”
Section: Introductionmentioning
confidence: 75%
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