1992
DOI: 10.1016/0304-8853(92)90697-m
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Magnetic and electrical properties of the U-Si system (part II)

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Cited by 43 publications
(19 citation statements)
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“…[10] The calculated curve is in good agreement with the average value for homonuclear silicon contacts in alkaline-earth and rare-earth metal compounds (Figure 2). However, the interatomic SiÀSi distance of 285.3 pm for eightfold connected silicon in compounds ACSi 3 (AuCu 3 -type, AC = U, Np [10] ) reveals that the validity of the scaling holds only for metal atoms adopting similar bonding scenarios.…”
supporting
confidence: 78%
See 1 more Smart Citation
“…[10] The calculated curve is in good agreement with the average value for homonuclear silicon contacts in alkaline-earth and rare-earth metal compounds (Figure 2). However, the interatomic SiÀSi distance of 285.3 pm for eightfold connected silicon in compounds ACSi 3 (AuCu 3 -type, AC = U, Np [10] ) reveals that the validity of the scaling holds only for metal atoms adopting similar bonding scenarios.…”
supporting
confidence: 78%
“…The structuring of the semi-core shell of the cerium atoms and the multicenter interactions are substantially different [pm] in networks of binary compounds [10] and in modifications of the element. [4][5][6][7] The dashed curves are obtained by applying…”
mentioning
confidence: 99%
“…4. Values for c p increase linearly over the entire measurement range, with the exception of the endothermic peak with an onset at 723 K. Sato et al and Miyadai et al determined the heat capacity of U 3 Si 5 for T < 40 K in a magnetometer [11,12], which is the only c p data in the literature to the authors' knowledge.…”
Section: Heat Capacitymentioning
confidence: 96%
“…Specimen mass gains were 1-3 mg, which is attributed to surface reaction with the graphite coating. [24], and 04-003-3437 (USi 1.88 ) [12].…”
Section: Thermal Diffusivity Measurementsmentioning
confidence: 99%
“…Eine ausgeprägte Strukturierung der fünften Schale von Cer (Abbildung 3 oben) gibt einen zusätzlichen Abbildung 2. Konnektivität von Silicium (CN H ) und mittlere interatomare Abstände d(Si-Si) (in pm) in Netzwerken binärer Verbindungen [10] und in Modifikationen des Elements. [4][5][6][7] [12] Die mittlere Konnektivität von Silicium in Phasen RESi 1.8 (RE = Ce, Gd) und CeSi 2Àx (0.1 x 0.4) ist durch Defekte auf Werte unter 3 reduziert.…”
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