Magnesium-intercalated graphene on SiC: Highly n-doped air-stable bilayer graphene at extreme displacement fields

Čabo, Antonija Grubišić; Kotsakidis, Jimmy C.; Yin, Yuefeng; Tadich, Anton; Haldon, Matthew; Solari, Sean M; Bernardo, Iolanda Di; Daniels, Kevin M.; Riley, J.D.; Huwald, E.; Edmonds, Mark T.; Myers-Ward, Rachael L.; Medhekar, Nikhil V.; Gaskill, D. Kurt; Fuhrer, Michael S.

doi:10.1016/j.apsusc.2020.148612

Cited by 14 publications

(21 citation statements)

References 87 publications

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“…De Heer et al reports vF to be 0.7-0.8 × 10 6 ms −1 for BLG, which is 20% to 30% smaller than that of MLG with an EF at ~ 300 meV above the Dirac point [31]. However, recent measurements put vF of MLG closer to 1.2 × 10 6 ms −1 [43] with an EF of ~ 350 meV. Bernal stacked layers exhibit Berry's phase of 2π [40] as confirmed by the quantum Hall effect [44].…”

Section: Bilayer Graphenementioning

confidence: 95%

“…Intercalation has been performed via different elements such as hydrogen [21,75,77,81,134], oxygen [78], fluorine [135], gold [136], and magnesium [43]. The monolayer graphene formed after intercalation of buffer layer on SiC (0001) is called quasi-free-standing monolayer graphene (QFMLG).…”

Section: Intercalationmentioning

confidence: 99%

“…The most advanced intercalation may be magnesium intercalation of monolayer EG on SiC (0001) creating QFSBLG [43]. For this case, ARPES measurements demonstrate a very high n-type concentration of 2 × 10 14 cm −2 at an E F of 720 meV above E D and the creation of a band gap of 0.36 eV.…”

Section: Functionalization Of Egmentioning

confidence: 99%

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Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review

2020

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The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.

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Section: Bilayer Graphenementioning

confidence: 95%

Section: Intercalationmentioning

confidence: 99%

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Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review

2020

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“…To achieve this, various techniques such as surface chemical doping [6] or atom substitution (see refs. [5,7] for a brief review of these methods), gating, [8][9][10][11][12][13] proximity effects, [8,14] stacking, [15,16] and intercalation [17][18][19][20][21][22][23][24][25] (see ref. [26] for a brief review of intercalation) have been applied.…”

mentioning

confidence: 99%

“…Of these techniques, intercalation (i.e., the insertion of atoms or molecules beneath or in-between graphene sheets) has been demonstrated as a relatively simple and versatile method for achieving control over graphene's key electrical properties-carrier type, [17][18][19]21] conductivity, [20,[27][28][29] and bandgap. [25,30] For instance, engineering the carrier type and bandgap via intercalation could enable graphene p-n junctions [31][32] and transistors. [33] Whereas increasing graphene's conductivity via intercalation could enable highly conductive and transparent electrodes for solar cells, [34] interconnects, [35] or new superconductors.…”

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confidence: 99%

Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H‐SiC(0001)

Kotsakidis

Currie

Čabo

et al. 2021

Adv Materials Inter

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in condensed matter physics experiments due to its ease of production (typically via micromechanical cleavage) [1,2] and access to novel physics owing to its linear "Dirac" band structure at low energy. [3,4] But for graphene to be useful in device applications, we must be able to engineer [5] its electrical properties. To achieve this, various techniques such as surface chemical doping [6] or atom substitution (see refs. [5,7] for a brief review of these methods), gating, [8][9][10][11][12][13] proximity effects, [8,14] stacking, [15,16] and intercalation [17][18][19][20][21][22][23][24][25] (see ref. [26] for a brief review of intercalation) have been applied. Of these techniques, intercalation (i.e., the insertion of atoms or molecules beneath or in-between graphene sheets) has been demonstrated as a relatively simple and versatile method for achieving control over graphene's key electrical properties-carrier type, [17][18][19]21] conductivity, [20,[27][28][29] and bandgap. [25,30] For instance, engineering the carrier type and bandgap via intercalation could enable graphene p-n junctions [31][32] and transistors. [33] Whereas increasing graphene's conductivity via intercalation could enable highly conductive and transparent electrodes for solar cells, [34] interconnects, [35] or new superconductors. [20,36] Many of the intercalation experiments to date have utilized epitaxially synthesized graphene on SiC (either the 4H-or 6H-polytype on the (0001) orientation, i.e., silicon Magnesium intercalated "quasi-freestanding" bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, these challenges are overcome and the rate of Mg intercalation is significantly increased by laser patterning (ablating) the graphene to form micron-sized discontinuities. Low energy electron diffraction is then used to verify Mg-intercalation and conversion to Mg-QFSBLG, and X-ray photoelectron spectroscopy to determine the Mg intercalation rate for patterned and non-patterned samples. By modeling Mg intercalation with the Verhulst equation, it is found that the intercalation rate increase for the patterned sample is 4.5 ± 1.7. Since the edge length of the patterned sample is ≈5.2 times that of the non-patterned sample, the model implies that the increased intercalation rate is proportional to the increase in edge length. Moreover, Mg intercalation likely begins at graphene discontinuities in pristine samples (not step edges or flat terraces), where the 2D-like crystal growth of Mg-silicide proceeds. The laser patterning technique may enable the rapid intercalation of other atomic or molecular species, thereby expanding upon the library of intercalants used to modify the characteristics of graphene, or other 2D materials and heterostructures.

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Near‐Infrared and Visible‐Range Optoelectronics in 2D Hybrid Perovskite/Transition Metal Dichalcogenide Heterostructures

Varghese

Yin

Wang

et al. 2022

Adv Materials Inter

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The application of ultrathin 2D perovskites in near‐infrared and visible‐range optoelectronics is limited owing to their inherent wide bandgaps, large excitonic binding energies, and low optical absorption at higher wavelengths. Here, it is shown that by tailoring interfacial band alignments via conjugation with low‐dimensional materials like monolayer transition metal dichalcogenides (TMD), the functionalities of 2D perovskites can be extended to diverse, visible‐range photophysical applications. Based on the choice of individual constituents in the 2D perovskite/TMD heterostructures, first principles calculations demonstrate widely tunable type‐II bandgaps, carrier effective masses, and band offsets to enable an effective separation of photogenerated excitons for enhanced photodetection and photovoltaic applications. In addition, the possibilities of achieving a type‐I band alignment for recombination‐based light emitters as well as a type‐III configuration for tunneling devices are shown. Further, the effect of strain on the electronic properties of the heterostructures are evaluated to show a significant strain tolerance, making them prospective candidates in flexible photosensors.

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Magnesium-intercalated graphene on SiC: Highly n-doped air-stable bilayer graphene at extreme displacement fields

Cited by 14 publications

References 87 publications

Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review

Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review

Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H‐SiC(0001)

Near‐Infrared and Visible‐Range Optoelectronics in 2D Hybrid Perovskite/Transition Metal Dichalcogenide Heterostructures

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