1990
DOI: 10.1103/physrevb.41.9491
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Magic-angle spinningSi29NMR study of short-range order ina-Si

Abstract: The magic-angle spinning ' Si nuclear magnetic resonance (NMR) of annealed rf-sputterdeposited amorphous silicon was measured as a function of annealing temperature up to crystallization. The NMR peak width is observed to narrow significantly with little change in peak position. A comparison with Raman-scattering and neutron-diffraction results indicates that the distribution of NMR chemical shifts is modified by variations of the electronic density of states with bond-angle distribution.

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Cited by 53 publications
(54 citation statements)
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“…Another allotrope is amorphous silicon ( a -Si), produced by condensing silicon vapor generated by RF-plasma-sputtering of a silicon wafer on a condensing target that is maintained in an ultra high vacuum (UHV) or an inert atmosphere, for example argon [18,19]. This allotrope is a non-crystalline solid that displays a high concentration of dangling bonds [18].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Another allotrope is amorphous silicon ( a -Si), produced by condensing silicon vapor generated by RF-plasma-sputtering of a silicon wafer on a condensing target that is maintained in an ultra high vacuum (UHV) or an inert atmosphere, for example argon [18,19]. This allotrope is a non-crystalline solid that displays a high concentration of dangling bonds [18].…”
Section: Introductionmentioning
confidence: 99%
“…This allotrope is a non-crystalline solid that displays a high concentration of dangling bonds [18]. Hydrogenated amorphous silicon ( a -Si:H) can be synthesized using the same method by including hydrogen or silane gas in the blanketing atmosphere [18,19]. Hydrogenated amorphous silicon has a lower concentration of dangling bonds than in amorphous silicon, a -Si [19].…”
Section: Introductionmentioning
confidence: 99%
“…[22,23,24,25] Variation in both hydrogen content (-5-50 at.%) and local order contribute to the wide rate of 29 Si isotropic chemical shifts for a-Si:H. For example, the -38 ppm shift of as-deposited a-Si:H film becomes increasingly negative with annealing until a recrystallization peak was observed at -79.9 ppm. [25] Annealing reduces both hydrogen content and disorder in a-Si:H. In PS, the absence of Si-H peaks downfield from c-Si demonstrates PS does not contain amorphous hydrogenated silicon regions comparable to those found in deposited films. This is a significant observation, as the luminescence behavior of PS has been discussed in relationship to the optical behavior of a-Si:H. [ 14] In a-Si:H films, the 29 Si line widths are quite broad (30 to 100 ppm), even upon applying MAS.…”
Section: Resultsmentioning
confidence: 95%
“…In addition, considerable charge transfer can arise from disorder. [25] A distribution of bond angles and bond lengths will cause the chemical shift to be distributed over a range of values. While fast MAS spinning can average many line broadening interactions, it does not reduce chemical shift dispersion arising from disorder.…”
Section: Resultsmentioning
confidence: 99%
“…The 29 Si T 1 was reported to be 12,000 s for crystalline silicon nanoparticles. 32 Therefore, in the DP experiment, an excitation pulse of 30 o and a recovery time of 120 s were used to give us a qualitative but not quantitative signal, especially between the bulk and the surface silicon atoms. The DP MAS spectrum of SiNPs suspended in isopropanol ( Figure 8) reveals a distribution of peaks between -30 and -70 ppm and centered around -50 ppm and largely unaffected by the removal of 1 H decoupling.…”
Section: Methodsmentioning
confidence: 99%