Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing<sup>®</sup>
Daichi Dojima,
Kaito Tayake,
Koki Shigematsu
et al.
Abstract:This paper presents an investigation into the surface morphology control of 4H-SiC (0001) wafers cut to 4º off during thermal processing, aiming to suppress the propagation of basal plane dislocations (BPD) into the epitaxial growth layer. Developing methods for debunching rough surfaces with macro step bunching (MSB) using thermal processes removes many of the limitations of the conventional epitaxial growth process. This study presents a surface morphology control method that includes debunching of steps by … Show more
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