Macro Step Bunching/Debunching Engineering on 4° off 4H-SiC (0001) to Control the BPD-TED Conversion Ratio by Dynamic AGE-Ing^®

Abstract

This paper presents an investigation into the surface morphology control of 4H-SiC (0001) wafers cut to 4º off during thermal processing, aiming to suppress the propagation of basal plane dislocations (BPD) into the epitaxial growth layer. Developing methods for debunching rough surfaces with macro step bunching (MSB) using thermal processes removes many of the limitations of the conventional epitaxial growth process. This study presents a surface morphology control method that includes debunching of steps by thermal sublimation etching/growth using the Dynamic AGE-ing® (DA) method. By controlling the surface morphology before and after growth using this method, the dependence of the BPD-threading edge dislocation (TED) conversion ratio on surface morphology was systematically revealed. By selecting the optimal pre- and post-growth surface morphology, a 100 % BPD-TED conversion ratio was obtained for the 10 mm × 25 mm area. It was indicated that an innovative and stable surface morphology control technique using the DA sublimation process could solve numerous technological challenges in various fields.