2023
DOI: 10.1063/5.0159604
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Machine learning for accelerated bandgap prediction in strain-engineered quaternary III–V semiconductors

Badal Mondal,
Julia Westermayr,
Ralf Tonner-Zech

Abstract: Quaternary III–V semiconductors are one of the most promising material classes in optoelectronics. The bandgap and its character, direct or indirect, are the most important fundamental properties determining the performance and characteristics of optoelectronic devices. Experimental approaches screening a large range of possible combinations of III- and V-elements with variations in composition and strain are impractical for every target application. We present a combination of accurate first-principles calcul… Show more

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Cited by 2 publications
(2 citation statements)
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“…Mondal et al [26] used ML to predict the properties of the bandgap for quaternary III-V semiconductors. The author emphasized that the most widely used ML model in semiconductor material bandgap prediction is SVM.…”
Section: Electronic Structurementioning
confidence: 99%
See 1 more Smart Citation
“…Mondal et al [26] used ML to predict the properties of the bandgap for quaternary III-V semiconductors. The author emphasized that the most widely used ML model in semiconductor material bandgap prediction is SVM.…”
Section: Electronic Structurementioning
confidence: 99%
“…For example, support vector machine (SVM), random forest (RF), and other ensemble models have been important tools in electronic structure properties prediction. [26][27][28][29] Deep learning (DL) has been widely used in optoelectronic materials and often necessitates substantial volumes of data. Convolutional neural network (CNN), recurrent neural network (RNN), generative adversarial network (GAN), and graph neural network (GNN) are mainly applied to properties prediction, [30][31][32] structure prediction, [33][34][35] image analysis, [36] and optimization.…”
Section: Introductionmentioning
confidence: 99%