M₃C₂(OH)₂ (M = Zr and Hf): An Ideal Electrode Material for sub‐5 nm 2D Field‐Effect Transistors

Abstract

first-principles calculations, high-performance short-channel field-effect transistors, M 3 C 2 (OH) 2 (M = Zr and Hf), Ohmic contact, on/off ratio

Interfacial electronic properties between PtSe2and 2D metal electrodes: a first-principles simulation

“…In this study, the properties of interfaces formed by PtSe 2 and a series of 2D metals in both the vertical and lateral directions were systematically investigated using first-principles calculations. 43,70,71 We observed that in the lateral direction, PtSe 2 formed an n-type ohmic contact with Hf 2 C(OH) 2 /Nb 2 C(OH) 2 and a p-type ohmic contact with borophene/NbSe 2 /V 2 CF 2 /Nb 2 CO 2 . In addition, n-type Schottky contacts were formed for V 2 C(OH) 2 /Hf 2 CF 2 , and p-type Schottky contacts were formed for Nb 2 CF 2 /TaS 2 .…”

“…[65][66][67][68][69] In this study, the properties of interfaces formed by PtSe 2 and a series of 2D metals in both the vertical and lateral directions were systematically investigated using first-principles calculations. 43,70,71 We observed that in the lateral direction, PtSe…”