LW VCSELs for SFP+ applications

Graham, Luke A.; Jewell, J. L.; Maranowski, K. D.; Crom, Max V.; Feld, S.A.; Smith, Joseph M.; Beltran, James G.; Fanning, Thomas; Schnoes, Melinda; Gray, Mikel; Droege, David; Koleva, V.; Dudek, M.; Fiers, John; Patterson, R.

doi:10.1117/12.771288

Cited by 5 publications

(2 citation statements)

References 2 publications

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“…Details on the current device technology and capability are provided in [1]. An effort is currently under way to make further improvements in device bandwidth and to further enhance manufacturability.…”

Section: Lw Vcsel Updatementioning

confidence: 99%

New developments in 850 and 1300nm VCSELs at JDSU

Graham

Schnoes

Maranowski

et al. 2009

Vertical-Cavity Surface-Emitting Lasers XIII

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Results on new 850nm and 1310nm VCSEL products under development at JDSU will be presented with emphasis on reliability criteria, advances in performance, and interconnect design. An update will also be provided on JDSU's effort to introduce 10Gpbs LW VCSEL based components and modules into the marketplace. INTRODUCTIONThe JDSU facility in Louisville Colorado has developed a new variation of its laterally oxidized 850nm 10Gbps VCSEL designed for transceivers operating at the upper end of the industrial temperature range (-40-85C). Beta grade sample transmit optical subassemblies (TOSAs) using the new device are available now and design verification testing is nearly complete. These devices are scheduled to be in production by March 1, 2009. So far, the new extended temperature 850nm VCSEL design appears to exhibit modulation, line width and reliability properties equivalent to JDSU standard devices designed for transceivers operating in the commercial temperature range (0-75C). In this paper we will also provide an update on JDSU's 10Gbps LW VCSEL program. : Figures 2.1.1 and 2.1.2 show sample light and voltage versus current and slope plots for JDSU's standard and extended temperature VCSEL die at -5, 30, and 90C. As shown in 2.1.1, roll-over current for the extended temperature material is now well beyond 10mA. Typical light versus current slopes at 90C are now ~0.28mW/mA. These improvements at the die level will allow JDSU to release a new TOSA variant with an expanded, TOSA, operating temperature range of -10 to 95C. Note that 10Gbps operation down to -40C will also be possible with this device with variances in the optical power and RMS line width specifications. Over the -10 to 95C temperature range, the maximum TOSA slope efficiency variation specification will remain -4000 PPM/deg C. EXTENED TEMPERATURE 850NM VCSELS Optical Performance

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Section: Lw Vcsel Updatementioning

confidence: 99%

New developments in 850 and 1300nm VCSELs at JDSU

Graham

Schnoes

Maranowski

et al. 2009

Vertical-Cavity Surface-Emitting Lasers XIII

Self Cite

View full text Add to dashboard Cite

show abstract

“…In 2008, JDSU/Picolight has developed a commercial InGaNAs based long wavelength VCSEL for 10Gbps applications. This device maintains a side mode suppression ratio of 30dB with a 7~8 μm oxide aperture specification, allowing high wafer yield with expected wear out times more than 45 years to 1% failure at 7 mA 70º C, and an aggregate random failure rate of 45 FIT [12] . In 2013, the reliability of wafer fused 1310 nm VCSEL was demonstrated, which calculated activation energy value of 0.67 eV and current exponent factor of 3.93 [13] .…”

Section: Introductionmentioning

confidence: 99%