2021
DOI: 10.1109/access.2021.3136550
|View full text |Cite
|
Sign up to set email alerts
|

Lumped-Capacitive Modeling and Sensing Characteristics of an Electrolyte-Gated FET Biosensor for the Detection of the Peanut Allergen

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
10
0

Year Published

2024
2024
2024
2024

Publication Types

Select...
1

Relationship

1
0

Authors

Journals

citations
Cited by 1 publication
(10 citation statements)
references
References 28 publications
0
10
0
Order By: Relevance
“…To further understand the sensing responses of EGT in detecting the aptamer–SC2 conjugate, a lumped-capacitive model with the presence of a dipole layer and a capacitive component was employed [ 19 , 36 , 37 ]. The binding factor α, defined as the ratio of the aptamer sites bound with the SC2 molecules to the total aptamer sites, can be expressed as [ 33 , 36 , 38 ] where N AP_SC2 is the density of the aptamer–SC2 conjugates, N AP is the density of total immobilized aptamers, K is related to the dissociation constant of the aptamer–SC2 binding, and n is a slope factor that indicates the cooperativity of SC2 binding.…”
Section: Resultsmentioning
confidence: 99%
See 4 more Smart Citations
“…To further understand the sensing responses of EGT in detecting the aptamer–SC2 conjugate, a lumped-capacitive model with the presence of a dipole layer and a capacitive component was employed [ 19 , 36 , 37 ]. The binding factor α, defined as the ratio of the aptamer sites bound with the SC2 molecules to the total aptamer sites, can be expressed as [ 33 , 36 , 38 ] where N AP_SC2 is the density of the aptamer–SC2 conjugates, N AP is the density of total immobilized aptamers, K is related to the dissociation constant of the aptamer–SC2 binding, and n is a slope factor that indicates the cooperativity of SC2 binding.…”
Section: Resultsmentioning
confidence: 99%
“…After introducing SC2 to the aptamer-functionalized surface, it generates an effective dipole moment ( V DP_EFF ) and an effective capacitance ( C FN_EFF ). V DP_EFF can be expressed as follows [ 20 , 36 , 37 ]: where P DP is the perpendicular component of the dipole moment, ε DP is the permittivity of the dipole layer, and V DP_GT is the dipole potentials at the gate electrode. V DP_EFF is mainly determined from the gate electrode since the gate area is ~5000 times larger than the channel area in the fabricated EGT device.…”
Section: Resultsmentioning
confidence: 99%
See 3 more Smart Citations