Luminescent properties of Y 3 Al 5−x Ga x O 12 :Ce crystals

Zorenko, Yu.; Zorenko, T.; Malinowski, Piotr; Sidletskiy, O.; Neicheva, S.

doi:10.1016/j.jlumin.2014.07.011

Cited by 27 publications

(12 citation statements)

References 12 publications

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“…Another illustration of clusterization is the behavior of carrier transport efficiency to activator studied by luminescence excitation spectra in LuYAP:Ce, as well as in LGSO:Ce and YAGG:Ce . As the energy increases over E g , a part of electrons and holes diffuse to the distances over R Ons and may escape the scintillation process.…”

Section: Evidences Of Clusterization In Mixed Crystalsmentioning

confidence: 99%

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Trends in Search for Bright Mixed Scintillators

Sidletskiy

2018

Physica Status Solidi (a)

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The paper addresses the recent progress in study of light yield behavior in scintillators based on solid solutions (mixed crystals), which are among the brightest known scintillators. Following the prior work [O. Sidletskiy et al., Phys. Status Solidi A 2014, 211, 2384, the extended phenomenological analysis of the correlations between light yield behavior and physical properties of mixed crystals (band gaps of the components, ionic radii, and atomic weights of the substitutional atoms) is carried out. The trend to light yield enhancement is notable in systems with the substitution of atoms in two non-equivalent crystallographic sites in the lattice leading to formation of planes and columns enriched with one of the substitutional atoms. This evidences an important role of nanoscale spatial inhomogeneity (domains or clusters) in scintillation process in mixed scintillators. A roadmap of search for new bright scintillators is proposed basing on the established trends.

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Section: Evidences Of Clusterization In Mixed Crystalsmentioning

confidence: 99%

“…The correlation between ( L ex /L veg ) max and the band gap difference Δ E g basing on E g values is plotted in Figure . Despite the strong LY enhancement in garnets and some halides with Δ E g > 0.9, large positive deviations of LY were observed as well in systems with weak E g changes.…”

Section: Phenomenological Approach To Ly Predictionmentioning

confidence: 99%

Trends in Search for Bright Mixed Scintillators

Sidletskiy

2018

Physica Status Solidi (a)

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“…In 2014, Zorenko al. [5] found that in a Y 3 Al 5Àx Ga x O 12 :Ce (YAGG:Ce) crystal with low Ga (x < 3) and high Ga (x > 3), the proportion of Ga occupying a tetrahedron and octahedron is different, which leads to the different performance of optical properties. Kamada et al [6] established the relationship between the scintillation characteristics of the GAGG:Ce crystal and the Al/Ga ratio.…”

Section: Introductionmentioning

confidence: 99%

Abnormal Site Preference of Al and Ga in Gd₃Al_2.3Ga_2.7O₁₂:Ce Crystals

Meng

Chen

et al. 2021

Physica Status Solidi (b)

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Large-sized Gd 3 Al 2.3 Ga 2.7 O 12 :Ce single crystals are grown by the Czochralski method. The distribution of Al and Ga at octahedral (oct-, 6-oxygen-coordinated) and tetrahedral (tet-, 4-oxygen-coordinated) sites in the crystal is studied. Rietveld refinement is used to analyze the site occupation of Al and Ga. The results show that Ga ions with a larger radius than Al ions prefer to occupy the more compact tetrahedral sites. Density functional theory calculations show that the energy for a Ga ion at the tetrahedral site is lower than that at the octahedral site in the Gd 3 Al 5 O 12 crystal, whereas the case for Al occupation in the Gd 3 Ga 5 O 12 crystal is opposite. Slater rules are used to estimate the effective charge number of different ions, and the distribution of coordination ions around the octahedral and tetrahedral sites is analyzed. Then, the interaction between ions is simplified and the repulsive energy between Al/Ga and the coordination ions is calculated, which could provide reasonable understanding on the abnormal occupation. In addition, the occupation of Sc in Gd/Y garnet systems is also discussed using this method.

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“…In order to improve the luminescence properties of YAG:Ce phosphors, several studies have been reported on the redshift of emission spectrum through element doping in YAG structure, including the cation-substitution [11][12] and the anion-group -substitution 13 . The results indicated that the emission wavelength mainly depended on changes in lattice parameter and strength of the crystal-field splitting of Ce 3+ ions during elements substitution [14][15] .…”

Section: Introductionmentioning

confidence: 99%

“…To improve the luminescence properties of YAG:Ce phosphors, several studies have been reported on the red shift of emission spectrum through element doping in YAG structure, including the cation substitution , and the anion-group substitution . The results indicated that the emission wavelength mainly depended on changes in lattice parameter and strength of the crystal-field splitting of Ce 3+ ions during elements substitution. , Recently, the chemical unit cosubstituting solid solution design strategy − has been proposed to adjust the emission of YAG:Ce phosphors, such as (Gd x Y 3– x )Al 2 Ga 3 O 12 :Ce 3+ ( x = 1, 2, and 3), YGd 2 Al 5– x Ga x O 12 :Ce 3+ ( x = 2, 3, and 4), and Y 2 BaAl 4 SiO 12 :Ce 3+ .…”

Section: Introductionmentioning

confidence: 99%

Red-Shifted Emission in Y₃MgSiAl₃O₁₂:Ce³⁺ Garnet Phosphor for Blue Light-Pumped White Light-Emitting Diodes

Huang

et al. 2018

J. Phys. Chem. C

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It is highly desirable to red-shift the emission of Y3Al5O12:Ce 3+ phosphor in order to obtain a warmer correlated color temperature (CCT) in applications for blue light pumped white light emitting diodes (w-LEDs) with high color rendering index (CRI). In this paper, we reported the red-shifted emission of Y3MgSiAl3O12:Ce 3+ garnet phosphor for w-LEDs through a chemical unit co-substituting in solid solution design strategy. The fabrication temperature of the Y3MgSiAl3O12:Ce 3+ powder was optimized at 1600 ºC and its structure, photoluminescence properties, micromorphology, decay curves, quantum yield, as well as the thermal stability of the samples were investigated in details. The as-prepared Y3MgSiAl3O12:Ce 3+ phosphors displayed a broad excitation band ranging from 300 to 520 nm (centered at 450 nm), and presented an intense Ce 3+ 5d-4f emission band in the yellow light region (λem=564 nm, obviously red-shifted away from Y3Al5O12:Ce 3+). This can be explained by the increase of the crystal field splitting in the Ce 3+ 5d levels due to the chemical unit co-substitution of Al 3+ (I) and Al 3+ (II) ions by Mg 2+ and Si 4+ ions. The quantum yield of the Y2.92MgSiAl3O12:0.08Ce 3+ phosphor was measured as 61.8%. Further investigation on the packaged w-LEDs lamp by combining Y2.92MgSiAl3O12:0.08Ce 3+ phosphors on a blue InGaN chip exhibit a lower CCT and higher CRI compared to the commercial Y3Al5O12: Ce 3+ based device, indicating their outstanding strengths for potential applications in w-LEDs.

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Luminescent properties of Y 3 Al 5−x Ga x O 12 :Ce crystals

Cited by 27 publications

References 12 publications

Trends in Search for Bright Mixed Scintillators

Trends in Search for Bright Mixed Scintillators

Abnormal Site Preference of Al and Ga in Gd₃Al_2.3Ga_2.7O₁₂:Ce Crystals

Red-Shifted Emission in Y₃MgSiAl₃O₁₂:Ce³⁺ Garnet Phosphor for Blue Light-Pumped White Light-Emitting Diodes

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Luminescent properties of Y 3 Al 5−x Ga x O 12 :Ce crystals

Cited by 27 publications

References 12 publications

Trends in Search for Bright Mixed Scintillators

Trends in Search for Bright Mixed Scintillators

Abnormal Site Preference of Al and Ga in Gd3Al2.3Ga2.7O12:Ce Crystals

Red-Shifted Emission in Y3MgSiAl3O12:Ce3+ Garnet Phosphor for Blue Light-Pumped White Light-Emitting Diodes

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Product

Resources

About

Abnormal Site Preference of Al and Ga in Gd₃Al_2.3Ga_2.7O₁₂:Ce Crystals

Red-Shifted Emission in Y₃MgSiAl₃O₁₂:Ce³⁺ Garnet Phosphor for Blue Light-Pumped White Light-Emitting Diodes