Luminescent properties of GaN

Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition

“…[3][4][5][6][7][8][9][10][11][12][13][14] There have been several reports on the temperature dependence of the GaN band gap. [15][16][17][18][19][20][21][22][23][24] However, the estimated temperature coefficients reported by the literature vary among the samples prepared by various growth techniques as well as with different optical measurement methods.…”

Infrared Luminescence from MOCVD Gan

“…It is thus interesting to investigate the possibility of optical emission from this level to the valence band, since it would produce an emission at 1.44 gm. Furthermore, the origin of the infrared luminescence peak at 1.3 eV, observed by Pankove et al from undoped GaN [8], was not understood.…”

Influence of growth parameters on the sub-bandgap absorption of MOVPE-grown GaN measured using photothermal deflection spectroscopy

“…In order to improve the quality of the material it is necessary to understand the origin of defects and the effects of various growth parameters on their formation. The commonly used spectroscopic techniques used to study these defects are photoluminescence [5,6], deeplevel transient spectroscopy [7] and photoconductivity [8]. Besides these techniques, photothermal deflection spectroscopy (PDS), due to its high sensitivity (ad ¼ 10 À4 -10 À6 ; where a is the absorption coefficient and d is the sample thickness) and non-destructive nature [9,10] can also be used to probe defects in thin GaN films.…”