Abstract:Samples of single-crystal, n-type CdSe emit when excited with ultraband gap excitation. The emission band (Xmal =» 720 nm) is near the band gap of CdSe (~1 .7 eV); its energy, decay time, and temperature dependence are consistent with its description as edge emission. Photoluminescence (PL) spectra can be dependent on excitation wavelength and show evidence of self-absorption effects: PL spectra obtained with 457.9-nm excitation are broadened in the high-energy portion of the band relative to spectra obtained … Show more
“…Among semiconductor electrodes, n-CdSe has, like n-CdS, been the subject for the extensive use of n-CdSe in PEC's (52). The ability of n-CdS and n-CdSe to form solid solutions of n-CdSxSeI X (0<XOI) prompted us to examine PL properties of these solids as a family, using the *" stabilizing chalcogenide electrolytes for PEC construction (52)(53)(54).…”
Section: I1"supporting
confidence: 42%
“…The ability of n-CdS and n-CdSe to form solid solutions of n-CdSxSeI X (0<XOI) prompted us to examine PL properties of these solids as a family, using the *" stabilizing chalcogenide electrolytes for PEC construction (52)(53)(54).…”
Section: I1"mentioning
confidence: 46%
“…13 In concluding this section we note that all of the single-crystal n-Cd;XSel.X samples examined exhibit quenching of their PL intensity when used as PEC electrodes, as illustrated in Fig. 14; the extent of quenching and corresponding properties related to optical energy conversion are summarized in We examined both n-CdS:Te- (46,47,75) and n-CdSxSelX-based PEC's (52,53) for agreement with eq. [7].…”
“…Among semiconductor electrodes, n-CdSe has, like n-CdS, been the subject for the extensive use of n-CdSe in PEC's (52). The ability of n-CdS and n-CdSe to form solid solutions of n-CdSxSeI X (0<XOI) prompted us to examine PL properties of these solids as a family, using the *" stabilizing chalcogenide electrolytes for PEC construction (52)(53)(54).…”
Section: I1"supporting
confidence: 42%
“…The ability of n-CdS and n-CdSe to form solid solutions of n-CdSxSeI X (0<XOI) prompted us to examine PL properties of these solids as a family, using the *" stabilizing chalcogenide electrolytes for PEC construction (52)(53)(54).…”
Section: I1"mentioning
confidence: 46%
“…13 In concluding this section we note that all of the single-crystal n-Cd;XSel.X samples examined exhibit quenching of their PL intensity when used as PEC electrodes, as illustrated in Fig. 14; the extent of quenching and corresponding properties related to optical energy conversion are summarized in We examined both n-CdS:Te- (46,47,75) and n-CdSxSelX-based PEC's (52,53) for agreement with eq. [7].…”
“…We recently reported on the PL properties of homogeneous CdS xSeI_ samples employed as photoelectrodes in such PECs (8,9). We found that the passage of photocurrent quenched the PL intensity of these samples but did not perturb the spectral distribution.…”
Section: Pl Properties In a Pecmentioning
confidence: 40%
“…Emission due to a dopant was investigated with samples of Te-doped CdS (CdS:Te) (5-7), and edge emission was studied with members of the CdS xSe X (0 < X C 1) series (8,9). Our general finding was that photoluminescence (PL) could be perturbed and electroluminescence (EL) initiated in aqueous electrolytes by interfacial charge-transfer events.…”
The sections in this article are
Introduction
Surface‐tailoring of Semiconductor
Cd
X
(
X
=
S
,
Se
)
TiO
2
Analyses of Grain Boundaries
Conclusion and Prospect
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