Photoluminescence (PL) of Bi 12 GeO 20 and Mo doped Bi 12 GeO 20 (Mo: Bi 12 GeO 20 ) crystals in visible and near-infrared (NIR) spectral regions were studied. X-ray diffraction analysis, absorption and Raman scattering spectra of these crystals were also measured. Pure Bi 12 GeO 20 after annealing in N 2 atmosphere at 450 ºC and 550 °C show predominant emissions at about 745 and 1250 nm bands, while the emission peaks of Mo:Bi 12 GeO 20 crystals untreated or after annealing in Ar at 300 °C are at around 538 and 1165 nm. The results suggest that annealing induces intrinsic luminescence of Bi in pure Bi 12 GeO 20 at room temperature and Mo influences the luminescence centers of Bi 12 GeO 20.