Abstract:Two types of thermal-diffusion-based technological routes have been realized to obtain ZnSe:Fe plates demanded for laser application in the mid-IR spectral range. For the technological routes used, the iron doping process is shown to lead to the formation of auxiliary luminescence bands including (1) luminescence of residual tetrahedral donors and acceptors; (2) unknown bound exciton line located at 459 nm; (3) broad bands with maxima at 490, 520, 670, and 820 nm; and (4) IR band at 960 nm previously assigned … Show more
“…Several flight experiments of NASA Marshall Space Flight Center led by Su et al [5] show that thermal and diffusional convention play very important role in controlling the quality. The details of mechanism [6,7] of iron and chromium doped ZnSe indicated that transition metals have great potential to replace rare-earth dopants. In addition, since the emission depends on concentration of dopants, higher dopant concentration enhances the convector-diffusive process and hence possibility of point and line defects increases significantly.…”
Binary and ternary selenide crystals have been proven as multifunctional for optical sensors and laser applications. The aim of this study was to evaluate reactive flux growth process of the doped zinc selenide crystals and compared with bulk physical vapor transport (PVT) grown large single crystals. The experimental process of synthesis involved PVP (Polyvinyl Pyrrolidone) flux dissolved in DI water which was heated at 65°C, stirred until all PVP dissolved. We added Se powder dissolved in ethanol and heated again for few minutes. We added ZnCl2 solution in ethanol/Se mixture and heated at well below 100 0 C. Water and ethanol solvent was separated and placed at 200C. The residue material was doped with transition metal. This material was characterized for the luminescence and compared with the results of bulk crystals grown by PVD process.
“…Several flight experiments of NASA Marshall Space Flight Center led by Su et al [5] show that thermal and diffusional convention play very important role in controlling the quality. The details of mechanism [6,7] of iron and chromium doped ZnSe indicated that transition metals have great potential to replace rare-earth dopants. In addition, since the emission depends on concentration of dopants, higher dopant concentration enhances the convector-diffusive process and hence possibility of point and line defects increases significantly.…”
Binary and ternary selenide crystals have been proven as multifunctional for optical sensors and laser applications. The aim of this study was to evaluate reactive flux growth process of the doped zinc selenide crystals and compared with bulk physical vapor transport (PVT) grown large single crystals. The experimental process of synthesis involved PVP (Polyvinyl Pyrrolidone) flux dissolved in DI water which was heated at 65°C, stirred until all PVP dissolved. We added Se powder dissolved in ethanol and heated again for few minutes. We added ZnCl2 solution in ethanol/Se mixture and heated at well below 100 0 C. Water and ethanol solvent was separated and placed at 200C. The residue material was doped with transition metal. This material was characterized for the luminescence and compared with the results of bulk crystals grown by PVD process.
“…In the last decade, a series of works on the exploration of PL spatial distribution in bulk ZnSe crystals appeared (see, e.g., Refs [24,25,26,51,52,53]…”
Recently, photoluminescence tomography based on the confocal laser scanning microscopy with two-photon excitation has been developed to study the distribution of point and extended defects in the bulk of ZnSe laser crystals. This article presents the use of the tomography to investigate luminescent micro inclusions in transparent amorphous media such as silicate glass. Studies of CdZnSSe crystals synthesized in a silicate glass melt have been carried out using the tomography with both two-photon and single-photon excitation of luminescence. Zn-rich glass manufactured in the 19th century has been found to contain micron-sized crystals of CdZnSSe of hexagonal crystal system exhibiting intense photoluminescence. The photoluminescence band of these crystals has been found to peak at about 2.1 eV (∼ 590 nm) at 300 K. Minor shifts in the maximum of bands and changes in their shape in individual crystals or at tomogram points within the crystal are associated with variations in their composition. Changes in the photoluminescence band shape and maximum due to the excitation of luminescence in CdZnSSe crystallites by laser radiation of different energies have also been observed in this study.
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