Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN

Albrecht, M.; Christiansen, Silke; Salviati, G.; Zanotti-Fregonara, C.; Rebane, Yu. T.; Shreter, Yu. G.; Mayer, Markus; Pelzmann, A; Kamp, M.; Ebeling, Karl Joachim; Bremser, M. D.; Davis, R. F.; Strunk, H. P.

doi:10.1557/proc-468-293

Cited by 46 publications

(32 citation statements)

References 24 publications

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“…We attribute the 3.41 eV emission to an exciton bound to stacking faults. 25 Significantly, the 3.30 eV emission related to cubic zinc-blende phase GaN appears in almost the same regions as the 3.41 eV emission. This is not surprising since stacking faults are known to give rise to zinc-blende GaN.…”

Section: High Sheet Carrier Concentrationmentioning

confidence: 71%

“…This is because the 3.40 peak can be mixed with the LO phonon replica of the DX peak since the relative contribution of the latter increases with temperature. A model 25 has been proposed for this frequently reported emission 26,27,28 based on recombination of an exciton bound to an I 1 type stacking fault in GaN. In this model, the stacking fault is similar to a cubic quantum well in wurtzite GaN.…”

Section: Low Sheet Carrier Concentrationmentioning

confidence: 99%

See 1 more Smart Citation

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Sun

Goss

Brillson

et al. 2002

Journal of Applied Physics

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Cathodoluminescence ͑CL͒ imaging and temperature-dependent cathodoluminescence spectroscopy ͑CLS͒ have been used to probe the spatial distribution and energies of electronic defects near GaN/Al 2 O 3 interfaces grown by hydride vapor phase epitaxy ͑HVPE͒. Cross sectional secondary electron microscopy imaging, CLS, and CL imaging show systematic variations in defect emissions with a wide range of HVPE GaN/sapphire electronic properties. These data, along with electrochemical capacitance-voltage profiling and secondary ion mass spectrometry provide a consistent picture of near-interface doping by O out-diffusion from Al 2 O 3 into GaN over hundreds of nanometers. Low-temperature CL spectra exhibit a new donor level at 3.447 meV near the interface for such samples, characteristic of O impurities spatially localized to the nanoscale interface. CLS emissions indicate the formation of amorphous Al-N-O complexes at 3.8 eV extending into the Al 2 O 3 near the GaN/sapphire interface. CLS and CL images also reveal emissions due to excitons bound to stacking faults and cubic phase GaN. The temperature dependence of the various optical transitions in the 10-300 K range provides additional information to identify the near interface defects and impurity doping.

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Section: High Sheet Carrier Concentrationmentioning

confidence: 71%

Section: Low Sheet Carrier Concentrationmentioning

confidence: 99%

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Sun

Goss

Brillson

et al. 2002

Journal of Applied Physics

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“…Instead, it is attributed to the less commonly observed Y 2 line, 49 normally detected at 3.40 eV, but, again, the emission can be shifted toward lower energy due to tensile stress. The Y 2 line is reported to be influenced by acceptor doping 49 (like carbon) and is strongly related to stacking faults parallel to the substrate/film interface, 50,51 which originate from the overgrowth in the lateral direction of GaN islands with different altitudes, as described above in Sec. III C. The broad peak in the lower energy section of Fig.…”

Section: Influence On Optical Propertiesmentioning

confidence: 87%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition. From the influence of pressure, V/III ratio, and temperature, it was deduced that the growth process is determined by the mass-transport of gallium precursor material toward the substrate. The highest temperature yielded an improved epitaxial relationship between grown layer and substrate. X ray diffraction (XRD) pole figure analysis established the presence of two domains of epitaxial layers, namely (0001) h10 10i GaN k (001) [110] diamond and (0001) h10 10i GaN k (001) ½1 10 diamond, which are 90 rotated with respect to each other. The presence of these domains is explained by the occurrence of areas of (2 Â 1) and (1 Â 2) surface reconstruction of the diamond substrate. When applying highly misoriented diamond substrates toward the [110] diamond direction, one of the growth domains is suppressed and highly epitaxial GaN on (001) diamond is realized.

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“…As first pointed out by Rieger et al [21] and Rebane et al [22], these WZ/ZB heterostructures may be pictured as ZB quantum wells (QWs) in a WZ matrix leading to emission at energies lower than for excitons in the bulk WZ phase, which in GaN is found at 3.478 eV [23]. While transitions associated with excitons bound to BSFs of the intrinsic I 1 type are well established to lie in the range of 3.40 to 3.42 eV [6,11,[24][25][26][27][28][29], there are fewer reports on luminescence lines associated with BSFs of the intrinsic I 2 type [5,[30][31][32]. Only recently, we reported emission peaks related to extrinsic BSFs [32], and Jacopin et al [33] observed luminescence lines associated with ZB segments.…”

Section: Introductionmentioning

confidence: 99%

Luminescence associated with stacking faults in GaN

Lähnemann¹,

Jahn²,

Brandt³

et al. 2014

J. Phys. D: Appl. Phys.

107

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Abstract. Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum wells, giving rise to radiative transitions of excitons with characteristic energies. Luminescence spectroscopy is thus capable of detecting even a single stacking fault in an otherwise perfect wurtzite crystal. This review draws a comprehensive picture of the luminescence properties related to stacking faults in GaN. The emission energies associated with different types of stacking faults as well as factors that can shift these energies are discussed. In this context, the importance of the quantum-confined Stark effect in these zinc-blende/wurtzite heterostructures, which results from the spontaneous polarization of wurtzite GaN, is underlined. This discussion is extended to zinc-blende segments in a wurtzite matrix. Furthermore, other factors affecting the emission energy and linewidth of stacking fault-related peaks as well as results obtained at room temperature are addressed. The considerations presented in this article should be transferable also to other wurtzite semiconductors.

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Luminescence Related to Stacking Faults in Heterepitaxially Grown Wurtzite GaN

Cited by 46 publications

References 24 publications

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Realising epitaxial growth of GaN on (001) diamond

Luminescence associated with stacking faults in GaN

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