Luminescence properties of YAl3(BO3)4:Gd3+ phosphors substituted with Sc3+ ions

Yoshida, Hisashi; Yoshimatsu, Ryo; Ogasawara, Kazuyoshi

doi:10.1016/j.jlumin.2006.01.215

Cited by 13 publications

(3 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In fact, promising results have recently been predicted from electronic calculations of a substitution from the Y or Al atom to the Sc atom in YAl 3 (BO 3 ) 4 :Gd 3þ phosphor. 25,26) As expected, it was confirmed from the experimental results that the luminescence peak intensity of the Sc 3þ doped YAl 3 (BO 3 ) 4 :Gd 3þ phosphor was about 1.4 times that of YAl 3 (BO 3 ) 4 :Gd 3þ phosphor. Details of the results will be reported elsewhere.…”

Section: Discussionsupporting

confidence: 65%

Optical Transitions near the Fundamental Absorption Edge and Electronic Structures of YAl₃(BO₃)₄:Gd³⁺

Yoshida

Yoshimatsu

Watanabe

et al. 2006

jjap

View full text Add to dashboard Cite

Optical properties of Gd3+ ions doped in YAl3(BO3)4 are investigated as a new UV phosphor under excitation of VUV radiation. A strong emission line at 3.96 eV (313 nm) corresponding to the transitions from the 6P7/2 to 8S7/2 states of Gd3+ ions is observed. We performed the Rietveld refinement using an X-ray diffraction result to obtain the structural parameters of a synthesized YAl3(BO3)4:Gd3+ phosphor. From the result, it is shown that the refined crystal structure of YAl3(BO3)4:Gd3+ phosphors is slightly distorted. The electronic structures have been calculated using the relativistic discrete variational Xα method. The calculations indicate that the optical properties of a non-doped YAl3(BO3)4 crystal near the fundamental absorption edge are characterized by the electronic transitions from O 2 p valence states to B 2 p conduction states. On the other hand, it is found that the origin of the absorption edge of YAl3(BO3)4:Gd3+ phosphor is due to the transitions from O 2 p states to mixed states of mainly B 2 p and Y 4d orbitals.

show abstract

Section: Discussionsupporting

confidence: 65%

Optical Transitions near the Fundamental Absorption Edge and Electronic Structures of YAl₃(BO₃)₄:Gd³⁺

Yoshida

Yoshimatsu

Watanabe

et al. 2006

jjap

View full text Add to dashboard Cite

show abstract

“…Many efforts have been made to discover oxide based phosphors to improve luminescent performance—including color purity, emission intensity, and quantum efficiency—because of the higher chemical stability of oxide phosphors relative to that of sulfide phosphors. Many studies have been conducted for developing new oxide phosphors in powder form suitable for full-color emissive displays [1,2,3,4,5,6,7]. …”

Section: Introductionmentioning

confidence: 99%

Structure and Photoluminescence Properties of Sm3+ Ion-Doped YInGe2O7 Phosphor

Shih

Chang

2017

Materials

View full text Add to dashboard Cite

A new phosphor, Sm3+ ion-doped YInGe2O7, was synthesized using a planetary ball mill solid state reaction. The XRD patterns show that all of the peaks can be attributed to the monoclinic YInGe2O7 crystal structure when the Sm3+ ion concentration is increased up to 20 mol %. Under an excitation wavelength of 404 nm, the Sm3+ intra-4f transition appears in the emission spectrum including two stronger emission peaks located at 560–570 nm and 598 nm correspond to the 4G5/2 → 6H5/2 and 4G5/2 → 6H7/2 transitions, respectively, and another weak emission peak located at 645 nm is due to the 4G5/2 → 6H9/2 transition. The decay time decreases from 4.5 to 0.8 ms as Sm3+ ion concentrations increase from 1 to 20 mol %, and the decay mechanism of the 4G5/2 → 6H7/2 transition is a single decay component between Sm3+ ions only. The concentration quenching effect occurs when the Sm3+ ion concentration is higher than 3 mol %. The CIE color coordinate of Y0.97Sm0.03InGe2O7 phosphor is at x = 0.457 and y = 0.407, which is located in the orange-yellow light region.

show abstract

“…Ultraviolet emissions have been observed in YAl3(BO3)4:Gd 3+ phosphors by Yoshida et al . . Some phosphor materials are reported as UV emitting, such as Na 2 La 2 B 2 O 7 , MgAl 2 O 4 , YAlO 3 , or Ca 5 (PO 4 ) 3 OH .…”

Section: Introductionmentioning

confidence: 99%

UVB‐emitting Gd³⁺‐activated M₂O₂S (where M = La, Y) for phototherapy lamp phosphors

2015

View full text Add to dashboard Cite

Gd(3+)-activated oxysulphide (M2O2S) may be used to study Photoluminescence (PL) properties with respect to phototherapy. Gd(3+)-activated phosphor materials are widely used for phototherapy lamps. The Gd(3+) ion gives characteristic Narrow-Band (NB) emissions, in particular in the ultraviolet (UV) light region, that are used to treat more than 50 types of skin diseases. In this paper, M2O2S oxysulphide doped with Gd(3+) was synthesized by the solid-state flux fusion method and its down conversion spectral properties were studied as a function of different Gd(3+) concentrations. The sample was characterized by X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), Fourier Transform Infrared Spectroscopy (FT-IR), and PL and the crystal structure was also studied. The lanthanum oxysulphide (La2O2S)-activated Gd(3+) ion showed a sharp emission peak at 314 nm when excited at 275 nm excitation, whereas the yttrium oxysulphide (Y2O2S)-activated Gd(3+) ion showed a sharp emission at 316 nm when excited by 272 nm. The effect of concentration of the Gd(3+) ion on the luminescence properties of M2O2S:Gd(3+) phosphor was also studied. These phosphor materials activated with the Gd(3+) ion may be suitable for phototherapy lamps, which are used to treat many types of skin diseases such as psoriasis, vitiligo, or scleroderma.

show abstract

Luminescence properties of YAl3(BO3)4:Gd3+ phosphors substituted with Sc3+ ions

Cited by 13 publications

References 6 publications

Optical Transitions near the Fundamental Absorption Edge and Electronic Structures of YAl₃(BO₃)₄:Gd³⁺

Optical Transitions near the Fundamental Absorption Edge and Electronic Structures of YAl₃(BO₃)₄:Gd³⁺

Structure and Photoluminescence Properties of Sm3+ Ion-Doped YInGe2O7 Phosphor

UVB‐emitting Gd³⁺‐activated M₂O₂S (where M = La, Y) for phototherapy lamp phosphors

Contact Info

Product

Resources

About

Luminescence properties of YAl3(BO3)4:Gd3+ phosphors substituted with Sc3+ ions

Cited by 13 publications

References 6 publications

Optical Transitions near the Fundamental Absorption Edge and Electronic Structures of YAl3(BO3)4:Gd3+

Optical Transitions near the Fundamental Absorption Edge and Electronic Structures of YAl3(BO3)4:Gd3+

Structure and Photoluminescence Properties of Sm3+ Ion-Doped YInGe2O7 Phosphor

UVB‐emitting Gd3+‐activated M2O2S (where M = La, Y) for phototherapy lamp phosphors

Contact Info

Product

Resources

About

Optical Transitions near the Fundamental Absorption Edge and Electronic Structures of YAl₃(BO₃)₄:Gd³⁺

Optical Transitions near the Fundamental Absorption Edge and Electronic Structures of YAl₃(BO₃)₄:Gd³⁺

UVB‐emitting Gd³⁺‐activated M₂O₂S (where M = La, Y) for phototherapy lamp phosphors