1996
DOI: 10.1016/0167-577x(96)00114-0
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Luminescence properties of GaBO3: Bi3+

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Cited by 43 publications
(24 citation statements)
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“…Chen et al [18][19][20] found two broad band emission regions at 140-220 nm and 230-290 nm for YBO 3 respectively. [1][2][3]21 The 29 nm shift in position from the excitation to the emission is due to the well-known Stokes shift. Additionally, the luminescence of Bi 3+ exhibited a red-shift with an increase in the Ga content inside the YAG host.…”
Section: Resultsmentioning
confidence: 99%
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“…Chen et al [18][19][20] found two broad band emission regions at 140-220 nm and 230-290 nm for YBO 3 respectively. [1][2][3]21 The 29 nm shift in position from the excitation to the emission is due to the well-known Stokes shift. Additionally, the luminescence of Bi 3+ exhibited a red-shift with an increase in the Ga content inside the YAG host.…”
Section: Resultsmentioning
confidence: 99%
“…30 The lowest part of the conduction band is occupied by the Ga-3d and Y-4d states approximately at 5 eV, 30 which is similar to the observed study carried out by Wang et al 14 and Ueda et al 6 These studies were important to confirm that indeed the introduction of Ga in the YAG matrix lowers the edge of the conduction band. The PLE band is attributed to the 1 S 0 -3 P 1 transitions 31 and the PL band is attributed to the 3 P 1 -1 S 0 transition. 17,31 The bands then experience a redshift as a consequence of the change in the crystal environment as the Ga ions are incorporated into the matrix.…”
Section: Unit Cell Representation-mentioning
confidence: 99%
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