Luminescence of γ-radiation-induced defects in α-quartz

Cannas, Marco; Agnello, S.; Gelardi, F. M.; Boscaino, R.; Trukhin, A.N.; Liblik, P.; Lushchik, Ch.; Kink, M.; Maksimov, Yuri; Kink, R.

doi:10.1088/0953-8984/16/45/015

Cited by 24 publications

(47 citation statements)

References 34 publications

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“…At 17.5 K, the time constants of 3.6 ns and 1.0 ns are definitely much shorter than the µs time constants of the 2.95 and 3.25-eV CL bands measured in α-quartz by Sahoo et al [25] at room temperature, or the 800-µs time constant of the 2.9/3.7-eV PL doublet found by Pealari et al [22] in silica. A fast PL band centered around 2.7 eV has also been found in SIMOX structures produced by oxygen ion implantation in silicon [23,24] and has been attributed to defects at the interface between Si clusters and the SiO 2 matrix.…”

Section: Luminescence Spectra At 10 Kmentioning

confidence: 82%

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Na-irradiated alpha-quartz: chemical epitaxy and luminescence

et al. 2008

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Doping of α-quartz by ion implantation leads to amorphization even at low fluences, but subsequent annealing in air or oxygen can restore the crystalline order (chemical epitaxy). Here we report on measurements of RBS channeling and cathodoluminescence (CL) spectra during chemical epitaxy of α-quartz irradiated with 50-keV Na-ions and annealed in 18 O 2 -gas. In particular, the variation of the damage profile and CL spectra (the latter taken at 10 K and 300 K) as functions of the ion fluence will be discussed. The CL spectra at 10 K are dominated by a 2.90-eV band and differ greatly from the ones taken at 300 K; the intensity of this band increases strongly with the Na ion fluence. Some conclusions concerning the underlying photoactive defect structures will be drawn.

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Section: Luminescence Spectra At 10 Kmentioning

confidence: 82%

“…The PL activity of α-quartz after γ -irradiation has been recently measured by Cannas et al [23,24] at 17.5-300 K using 7.6-eV photon excitation. These PL spectra gave evidence for two Gaussian-shaped bands, a blue band at 2.7 eV and a UV band at 4.9 eV.…”

Section: Luminescence Spectra At 10 Kmentioning

confidence: 99%

Na-irradiated alpha-quartz: chemical epitaxy and luminescence

et al. 2008

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“…Efficient defect creation by irradiation of a-quartz by 6-keV electrons at 9 K has been detected by measuring the rise of the 5-eV emission intensity (this emission is connected with radiation defects) during 3 h irradiation [41]. It was shown [42] that the same defects (absorption band at 7.6 eV) are formed under c-irradiation with the density of excitation lower than that under the electron irradiation. A relatively high radiation resistance of pure a-SiO 2 was earlier explained by the fact that the inequality E d > E g = 8.9 eV is valid in crystalline a-quartz in contrast with amorphous silica.…”

Section: Hot E-h Recombination and Defect Creation In Oxidesmentioning

confidence: 99%

Defect creation caused by the decay of cation excitons and hot electron–hole recombination in wide-gap dielectrics

Lushchik

Kirm

et al. 2006

Nuclear Instruments and Methods in Physics Research Section B:

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Insufficient radiation resistance of construction materials is the Achilles heel for thermonuclear energetics. In wide-gap dielectrics, Frenkel defects are created not only because of the knock-out (impact) mechanism but also because of the decay of the electronic excitations formed during the irradiation (i.e. due to nonimpact mechanisms). The processes of the defect creation at the irradiation of highly pure LiF single crystals at 6-8 K by 1-30-keV electrons, X-rays, or synchrotron radiation of 12-70 eV have been investigated. The annealing processes of these defects in a temperature range up to 200 K have been studied as well. In LiF, creation has been revealed for the following: (1) F-H pairs caused by the decay of anion excitons or by the recombination of electrons and holes, (2) F 0 -H-V K and F-I-V K defect groups at the decay of cation excitons (62 eV), or (3) 20-keV electron irradiation. The mechanism of defect creation at the recombination of hot holes and hot electrons has been discussed for a-SiO 2 crystals with an energy gap between the subbands of a valence band. One of the possible ways to suppress this mechanism (''luminescent defence'') is doping a material by luminescent impurities able to capture a part of the energy of hot carriers before their relaxation and recombination (e.g. in MgO:Cr).

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“…Also, in the past, it was noticed that luminescence of stishovite was very similar to that of oxygen deficient silica glass as well as of neutron, γ or dense electron beam irradiated α-quartz crystals [8][9][10][11][12]. This could confirm the presumption of the creation of octahedron motifs in the network of glass during preparation.…”

Section: Introductionmentioning

confidence: 71%

“…The excitation was made from one side of the holder and detection from the other, so that the possible luminescence of contamination on the surface of the holder was excluded. Pure silica glass samples of different manufactures as well as pure γ-irradiated and non-irradiated α-quartz crystals, studied in detail previously [7,[9][10][11][12], were used for comparison.…”

Section: Methodsmentioning

confidence: 99%

Luminescence of silicon Dioxide — silica glass, α-quartz and stishovite

Trukhin¹,

Šmits

Chikvaidze

et al. 2011

Open Physics

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Abstract:This paper compares the luminescence of different modifications of silicon dioxide -silica glass, α-quartz crystal and dense octahedron structured stishovite crystal. Under x-ray irradiation of pure silica glass and pure α-quartz crystal, only the luminescence of self-trapped exciton (STE) is detected, excitable only in the range of intrinsic absorption. No STE luminescence was detected in stishovite since, even though its luminescence is excitable below the optical gap, it could not be ascribed to a self-trapped exciton. Under ArF laser excitation of pure α-quartz crystal, luminescence of a self-trapped exciton was detected under two-photon excitation. In silica glass and stishovite mono crystal, we spectrally detected mutually similar luminescences under single-photon excitation of ArF laser. In silica glass, the luminescence of an oxygen deficient center is presented by the so-called twofold coordinated silicon center (L.N. Skuja et al., Solid State Commun. 50, 1069(1984). This center is modified with an unknown surrounding or localized states of silica glass (A.N. Trukhin et al., J. Non-Cryst. Solids 248, 40 (1999)). In stishovite, that same luminescence was ascribed to some defect existing after crystal growth. For α-quartz crystal, similar to silica and stishovite, luminescence could be obtained only by irradiation with a lattice damaging source such as a dense electron beam at a temperature below 80 K, as well as by neutron or γ-irradiation at 290 K. In spite of a similarity in the luminescence of these three materials (silica glass, stishovite mono crystal and irradiated α-quartz crystal), there are differences that can be explained by the specific characteristics of these materials. In particular, the nature of luminescence excited in the transparency range of stishovite is ascribed to a defect existing in the crystal after-growth. A similarity between stishovite luminescence and that of oxygen-deficient silica glass and radiation induced luminescence of α-quartz crystal presumes a similar nature of the centers in those materials.

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Luminescence of γ-radiation-induced defects in α-quartz

Cited by 24 publications

References 34 publications

Na-irradiated alpha-quartz: chemical epitaxy and luminescence

Na-irradiated alpha-quartz: chemical epitaxy and luminescence

Defect creation caused by the decay of cation excitons and hot electron–hole recombination in wide-gap dielectrics

Luminescence of silicon Dioxide — silica glass, α-quartz and stishovite

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