Luminescence of Sc‐related centers in single crystalline films of Lu
 3
 Al
 5
 O
 12
 garnet

Zorenko, Yu.; Gorbenko, V.; Voloshinovskii, А.; Stryganyuk, G.; Nedilko, S.; Degoda, V.Ya.; Chukova, O.

doi:10.1002/pssc.200460122

Cited by 17 publications

(6 citation statements)

References 3 publications

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“…One is at 335 nm (3.7 eV) and the other at around 395 nm (3.1 eV). Luminescence at 335 nm is reported in AlGaN [Riemann et al 2002], in Lu 3 Al 5 O 12 films [Zorenko et al 2005] and even in crystalline SiO 2 (α-quartz) coated with LiNbO 3 [Siu et al 1999], but never in normal or carbon implanted silica. The violet V luminescence comes into view at a lower wavelength, 394 nm, where this luminescence band was detected in the wavelength range 400-410 nm in other implanted silica layers, as we have already demonstrated in Ge + implanted SiO 2 .…”

Section: Carbon Implantation Sio 2 :C +mentioning

confidence: 99%

Silicon Nanocluster in Silicon Dioxide: Cathodoluminescence, Energy Dispersive X-Ray Analysis and Infrared Spectroscopy Studies

Salh¹

2011

Crystalline Silicon - Properties and Uses

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This chapter is extended to various electronical and optical modifications of amorphous silica (a-SiO 2) layers as they are applied in microelectronics, optoelectronics, as well as in the forthcoming photonics. Scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDX), Fourier transform infrared spectroscopy (FTIR) and cathodoluminescence (CL) have been used to investigate thermally grown pure amorphous silicon dioxide and ion-implanted layers with thickness d ox =100-500 nm. The main luminescent centers in silicon dioxide layers are the red luminescence (650 nm; 1.85 eV) of the non-bridging oxygen hole center (NBOHC; ≡Si-O•), a blue (460 nm; 2.7 eV) and a ultra violet luminescence (290 nm; 4.3 eV) of the oxygen deficient centers (ODC's; ≡Si•••Si≡), and a yellow luminescence (570 nm; 2.2 eV) appears especially in hydrogen treated silica indicating water molecules, and on the other hand, in silicon excess samples indicating higher silicon aggregates. A quite different CL dose behavior of the red luminescence is observed in dry and hydrogen-treated samples due to dissociation and re-association of mobile hydrogen and oxygen to radicals of the silica network. Additionally implanted hydrogen diminishes the red luminescence in wet oxide but maintains the blue and the UV bands. Thus hydrogen passivates the NBOHC and keeps the ODC's in active emission states. A model of luminescence center transformation is proposed based on radiolytic dissociation and re-association of mobile oxygen and hydrogen at the centers as well as formation of interstitial H 2 , O 2 , and H 2 O molecules. Non-stoichiometric SiO x layers produced by direct ion implantation or reactive sputtering are used to investigate whether the different luminescent centers are related to oxygen or to silicon. Oxygen implantation as well as direct silicon implantation led to an oxygen surplus as well as an oxygen deficit, respectively. The related luminescence damages provide direct evidence to the nature of the defects. Oxygen-deficient thin silica layers SiO x with different stoichiometric degree 1≤x≤2, were prepared by thermal evaporation of silicon monoxide in vacuum and in ambient oxygen atmosphere of varying pressure onto crystalline silicon substrates. The chemical composition has been calibrated and determined by FTIR spectroscopy. The CL spectra of the oxygen-deficient layers shows the development of typical silica luminescence bands at the composition threshold x≤1.5 onwards to x=2. The

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Section: Carbon Implantation Sio 2 :C +mentioning

confidence: 99%

Silicon Nanocluster in Silicon Dioxide: Cathodoluminescence, Energy Dispersive X-Ray Analysis and Infrared Spectroscopy Studies

Salh¹

2011

Crystalline Silicon - Properties and Uses

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“…Due to this fact the SCF are more convenient model objects for investigation of the II luminescence than their SC analogues grown from high-temperature melt [4,9,10].…”

Section: +mentioning

confidence: 99%

“…For this reason, these II are being widely used for creation of luminescence materials emitting in the UV range (250-350 nm) and based on Al 2 O 3 -Y 2 O 3 -Lu 2 O 3 oxide system of different structural types [4,5]. Within this class of materials the II-related luminescence is well investigated in Al 2 O 3 :Ga and Al 2 O 3 :Sc [1,6,7] and, especially, in garnets [1][2][3][4][5][8][9][10]. The most known phosphors of this kind are single crystals (SC) of Y 3 Al 5 O 12 :Sc (YAG:Sc) and Lu 3 Al 5 O 12 :Sc (LuAG:Sc) garnets with high (up to 0.5 with respect to NaI:Tl) light yield (LY) of luminescence [3,4].…”

Section: Introductionmentioning

confidence: 99%

Luminescence of La3+ and Sc3+ impurity centers in YAlO3 single-crystalline films

Zorenko

Gorbenko

Voznyak

et al. 2008

Journal of Luminescence

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The luminescence of La Y 3+ and Sc Y 3+ and Sc Al 3+ centers created by lanthanum and scandium ions at Y 3+ and Al 3+ cation sites of YAlO 3 perovskite lattice was investigated. The features of emission of excitons localized at the mentioned centers in YAlO 3 :La and YAlO 3 :Sc single-crystalline films were analyzed by means of time-resolved emission spectroscopy and luminescence decay kinetics measurements under excitation by synchrotron radiation at 9 and 300 K. r 2007 Published by Elsevier B.V.

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“…Thin films of oxide phosphors can be prepared by various methods such as chemical vapor deposition, sol-gel deposition, spin-coating, reactive sputtering, molecular beam epitaxy, liquid phase epitaxy, etc. (Higuchi et al, 2011;Inada et al, 2018;Malashkevich et al, 2016;Zorenko et al, 2005). A good way to save luminescent properties of vanadate nanoparticles is pulsed laser deposition (PLD) of films .…”

Section: Introductionmentioning

confidence: 99%

Pulsed laser deposition of the LaVO4:Eu, Ca nanoparticles on glass and silicon substrates

et al. 2020

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Thin films from the L VO 4 :Eu,Ca nanoparticles were successfully grown by pulsed laser deposition method on glass and silicon substrates for the first time. Morphology and thickness of the films depend on a type of substrate and a number of pulses. The films are of 27-220 nm thickness and formed by very small particles (up to 20 nm) and also can contain single nanoparticles with dimensions 40-60 nm and sometimes agglomerates of nanoparticles. Spectral properties of the samples have been investigated and discussed. The vanadate films deposited on the silicon substrates lead to appearance of antireflection properties in the visible range. Luminescence spectra of the investigated films consist of narrow lines caused by f-f transitions in the Eu 3+ ions. For the samples on glass substrates the wide bands of glass emission are also contributed to the spectra. The optimal experimental conditions those allowed to obtain films promising for applications as luminescent converters are considered.

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Luminescence of Sc‐related centers in single crystalline films of Lu ₃ Al ₅ O ₁₂ garnet

Cited by 17 publications

References 3 publications

Silicon Nanocluster in Silicon Dioxide: Cathodoluminescence, Energy Dispersive X-Ray Analysis and Infrared Spectroscopy Studies

Silicon Nanocluster in Silicon Dioxide: Cathodoluminescence, Energy Dispersive X-Ray Analysis and Infrared Spectroscopy Studies

Luminescence of La3+ and Sc3+ impurity centers in YAlO3 single-crystalline films

Pulsed laser deposition of the LaVO4:Eu, Ca nanoparticles on glass and silicon substrates

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Luminescence of Sc‐related centers in single crystalline films of Lu 3 Al 5 O 12 garnet

Cited by 17 publications

References 3 publications

Silicon Nanocluster in Silicon Dioxide: Cathodoluminescence, Energy Dispersive X-Ray Analysis and Infrared Spectroscopy Studies

Silicon Nanocluster in Silicon Dioxide: Cathodoluminescence, Energy Dispersive X-Ray Analysis and Infrared Spectroscopy Studies

Luminescence of La3+ and Sc3+ impurity centers in YAlO3 single-crystalline films

Pulsed laser deposition of the LaVO4:Eu, Ca nanoparticles on glass and silicon substrates

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Product

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Luminescence of Sc‐related centers in single crystalline films of Lu ₃ Al ₅ O ₁₂ garnet