Luminescence of<i>F</i>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msup><mml:mrow><mml:mi>F</mml:mi></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msup></mml:mrow></mml:math>centers in magnesium oxide

Rosenblatt, Gregg H.; Rowe, M. W.; Williams, Gwyn; Williams, Richard; Chen, Y.

doi:10.1103/physrevb.39.10309

Cited by 227 publications

(127 citation statements)

References 25 publications

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“…The band peaked at 2.85 eV is revealed in crystals with internal stress as reported in [16]. Also the effects of irradiation, thermo-chemical treatment and the influence of H impurities on the emission spectra have been analysed earlier using the time resolved spectroscopy, and our experimental results are in a good agreement with the observation reported in [17].…”

Section: Methodssupporting

confidence: 82%

Luminescence characterization of ultrathin MgO films of high crystallinity prepared by pulsed laser deposition

Feldbach

Jaaniso

Kodu

et al. 2008

J Mater Sci: Mater Electron

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Thin MgO films with thicknesses ranging from 127 to 35 nm were prepared by pulsed laser deposition on Si substrates. The crystalline films were smooth (rms roughness 0.6-1.2 nm) with an average density of 3.5 g/ cm 3 . Cathodoluminescence study revealed emissions peaked at 7.65 eV and ascribed to the edge emission of large radius exciton states as well as luminescence due to the F and F + colour centres in the range of 2-4 eV. This luminescence is efficiently excited in the absorption band peaked at 6.2 eV and in the intrinsic absorption with the onset at 7.4 eV via energy transfer processes.

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Section: Methodssupporting

confidence: 82%

Luminescence characterization of ultrathin MgO films of high crystallinity prepared by pulsed laser deposition

Feldbach

Jaaniso

Kodu

et al. 2008

J Mater Sci: Mater Electron

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“…We have provided and highlighted an explicit description of thermally activated defect-assisted magnetotransport by utilizing solid-state tunnelling spectroscopy 55 to probe the ground and excited states of oxygen vacancies 49,52 . Spin-polarized transport across MgObased MTJs with a 'low' density of M centres reproducibly proceeds with respect to F þ and F þ * centres for both P and AP channels, with a weighing at higher temperature (room temperature) in the AP channel towards the F þ * centre compared with the P channel due to symmetry mixing.…”

Section: Discussionmentioning

confidence: 99%

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

et al. 2014

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Research on advanced materials such as multiferroic perovskites underscores promising applications, yet studies on these materials rarely address the impact of defects on the nominally expected materials property. Here, we revisit the comparatively simple oxide MgO as the model material system for spin-polarized solid-state tunnelling studies. We present a defect-mediated tunnelling potential landscape of localized states owing to explicitly identified defect species, against which we examine the bias and temperature dependence of magnetotransport. By mixing symmetry-resolved transport channels, a localized state may alter the effective barrier height for symmetry-resolved charge carriers, such that tunnelling magnetoresistance decreases most with increasing temperature when that state is addressed electrically. Thermal excitation promotes an occupancy switchover from the ground to the excited state of a defect, which impacts these magnetotransport characteristics. We thus resolve contradictions between experiment and theory in this otherwise canonical spintronics system, and propose a new perspective on defects in dielectrics.

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“…The emission at wavelength $395 nm (3.14 eV) is due to 2 T 1u ! 2 A 1g transition of F þ (an oxygen vacancy retaining one electron) center relaxation and can be compared with the 390 nm (3.18 eV) emission peak reported earlier by Rosenblatt et al 15 A broad emission band observed around $430 nm (2.88 eV) is arising due to 3 B 1u ! 1 A g transitions of the F 2 2þ center in D 2h symmetry.…”

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confidence: 99%

Defect and adsorbate induced ferromagnetic spin-order in magnesium oxide nanocrystallites

Кумар

Kumar

Priya

2012

Applied Physics Letters

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We report the correlation between d0 ferromagnetism, photoluminescence (PL), and adsorbed hydrogen (H−) species in magnesium oxide (MgO) nanocrystallites. Our study suggests that the oxygen vacancies, namely singly ionized anionic vacancies (F+) and dimers (F22+) induce characteristic photoluminescence and the room-temperature ferromagnetic spin-order. Nanocrystallites with low population of oxygen vacancies have revealed diamagnetic behavior. Intriguingly, on adsorption of hydrogen (H−) species in the MgO nanocrystallites, ferromagnetic behavior was either enhanced (in the case of highly oxygen deficient nanocrystallites) or begun to percolate (in the case of nanocrystallite with low population density of oxygen vacancies).

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Luminescence ofFandF+centers in magnesium oxide

Cited by 227 publications

References 25 publications

Luminescence characterization of ultrathin MgO films of high crystallinity prepared by pulsed laser deposition

Luminescence characterization of ultrathin MgO films of high crystallinity prepared by pulsed laser deposition

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

Defect and adsorbate induced ferromagnetic spin-order in magnesium oxide nanocrystallites

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