Luminescence kinetics of dipolar excitons in circular traps

Mode interaction and dynamics features of class d lasers

“…The values of the damping rates |Im δ m | of the partial electromagnetic modes are assumed to be equal to 5 · 10 12 s −1 , which corresponds to the trap diameter 5 μm and the coefficient of reflection from its side surfaces of the order of 0.7 with respect to the field amplitude. According to [14], the exciton lifetime is assumed to be T 1 = 2 · 10 −9 s (1/T 1 = 5 · 10 8 s −1 ). Using this value of T 1 , we assume that |p 0 |/e is equal to 1Å.…”

Conditions and features of the lasing in traps for the bose condensation of dipolar excitons

“…Since γ ν 2 , in this region we have γ |ζ|. Here, as previously, one can make use of the approximation (13), obtaining the expression for the effective number of excitons in the form (14), but then it can be borne in mind that γ ν 2 |ζ| and, consequently,…”

“…According to the results of [13], the lifetime of excitons can be estimated as T 1 = 2·10 −9 s. The field relaxation rate |Im δ m | in the cavity will be determined by assuming that the amplitude coefficient of reflection of the electromagnetic field from the lateral surface of the trap is 0.7 and the trap is 5 μm in diameter; then we obtain |Im δ m | = 5 × 10 12 s −1 .…”

Bose‐Einstein condensation of dipolar excitons in double and single quantum wells

“…Energy, eV kinetics under pulsed ps-laser excitation we have directly measured lifetimes of dipolar excitons both in the case of DQW and for the wide SQW [20]. The found lifetimes were equal to 10 ns and 1 ns, respectively.…”

“…In the last decade, BEC of excitons in 2D systems based on semiconductor heterostructures has been an object of intensive research [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. In such semiconductor structures 2D exciton polaritons and photoexcited dipolar excitons in spatially separated electron-hole (e-h) layers are in the focus of interests.…”