Luminescence from<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">FeSi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>precipitates in Si. II: Origin and nature of the photoluminescence

Martinelli, Lucio; Grilli, E.; Мигас, Д. Б.; Miglio, Leo; Marabelli, F.; Soci, Cesare; Geddo, M.; Grimaldi, M. G.; Spinella, C.

doi:10.1103/physrevb.66.085320

Cited by 94 publications

(72 citation statements)

References 36 publications

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“…The latter issue can be the reason why absorption measurements [4,5] showed the direct nature of the gap while our calculations suggest that the indirect transition should be lower by a few tenth of eV. A similar situation has been observed for β-FeSi 2 where the first direct and indirect transitions are close in energy [18]. In order to confirm our findings, optical measurements on high-quality samples of Ir 3 Si 5 should be performed.…”

Section: Discussionsupporting

confidence: 80%

Electronic and optical properties of Ir₃Si₅

Мигас

Шапошников

Rodin

et al. 2007

Physica Status Solidi (b)

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First-principles calculations of the band structure and the dielectric function of Ir 3 Si 5 are presented. We find this compound to be characterized by an indirect band gap of 0.97 eV. A number of direct transitions of about 1 eV have been also determined. Features in the dependence of the imaginary and real parts of the dielectric function on photon energy are discussed in comparison with data for some other semiconducting silicides.

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Section: Discussionsupporting

confidence: 80%

Electronic and optical properties of Ir₃Si₅

Мигас

Шапошников

Rodin

et al. 2007

Physica Status Solidi (b)

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“…The a-FeSi 2 is a metallic phase that is thermally stable above 937 8C, and b-FeSi 2 is a semiconducting silicide. The photoluminescence (PL) at 1.55 mm from semiconducting b-FeSi 2 has attracted interest for silicon-based optoelectronic applications [1] and has been reported in various reports [2][3][4]. Moreover, its high optical absorption coefficient (higher than 10 5 cm À1 above 1.0 eV) can be advantage of using in photovoltaic devices [5].…”

Section: Introductionmentioning

confidence: 98%

Iron disilicide formation by Au–Si eutectic reaction on Si substrate

Akiyama¹,

Kaneko²,

Yokomizo³

et al. 2009

Applied Surface Science

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“…11,42 The difference between direct and indirect band gap energies is 11 meV for the average of our ␤-FeSi 2 nanoparticles. Christensen 7 reported in a theoretical calculation ͑for a defect-free system/fully relaxed͒ an energy difference of approximately 35 meV ͑at T=0 K͒ between the indirect gap and the first direct transition.…”

Section: Resultsmentioning

confidence: 92%

“…8,9 From this point of view, the study of the formation of isolated nanoparticles will be of interest to explore that prediction and additionally to complement low-dimensional structure knowledge for optoelectronic applications. Previous experiments by Grimaldi et al 10 and Martinelli et al 11 showed that elastically strained ball-shaped particles ͑formed by ion-beam synthesis͒ surrounded by a defect-free matrix do not have luminescence properties, whereas unstrained disk-shaped particles in a matrix with a large number of defects emit around 0.805 eV. Absorbance measurements of the latter have suggested the existence of a direct band gap.…”

Section: Introductionmentioning

confidence: 99%

Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles: Bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions

Lang

Amaral

Menêses

2010

Journal of Applied Physics

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We investigated the optical absorption of the fundamental band edge and the origin of the emission from β-FeSi2 nanoparticles synthesized by ion-beam-induced epitaxial crystallization of Fe+ implanted SiO2/Si(100) followed by thermal annealing. From micro-Raman scattering and transmission electron microscopy measurements it was possible to attest the formation of strained β-FeSi2 nanoparticles and its structural quality. The optical absorption near the fundamental gap edge of β-FeSi2 nanoparticles evaluated by spectroscopic ellipsometry showed a step structure characteristic of an indirect fundamental gap material. Photoluminescence spectroscopy measurements at each synthesis stage revealed complex emissions in the 0.7–0.9 eV spectral region, with different intensities and morphologies strongly dependent on thermal treatment temperature. Spectral deconvolution into four transition lines at 0.795, 0.809, 0.851, and 0.873 eV was performed. We concluded that the emission at 0.795 eV may be related to a radiative direct transition from the direct conduction band to an acceptor level and that the emission at 0.809 eV derives from a recombination of an indirect bound exciton to this acceptor level of β-FeSi2. Emissions 0.851 and 0.873 eV were confirmed to be typical dislocation-related photoluminescence centers in Si. From the energy balance we determined the fundamental indirect and direct band gap energies to be 0.856 and 0.867 eV, respectively. An illustrative energy band diagram derived from a proposed model to explain the possible transition processes involved is presented.

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Luminescence fromβ−FeSi2precipitates in Si. II: Origin and nature of the photoluminescence

Cited by 94 publications

References 36 publications

Electronic and optical properties of Ir₃Si₅

Electronic and optical properties of Ir₃Si₅

Iron disilicide formation by Au–Si eutectic reaction on Si substrate

Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles: Bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions

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Luminescence fromβ−FeSi2precipitates in Si. II: Origin and nature of the photoluminescence

Cited by 94 publications

References 36 publications

Electronic and optical properties of Ir3Si5

Electronic and optical properties of Ir3Si5

Iron disilicide formation by Au–Si eutectic reaction on Si substrate

Indirect optical absorption and origin of the emission from β-FeSi2 nanoparticles: Bound exciton (0.809 eV) and band to acceptor impurity (0.795 eV) transitions

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Product

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Electronic and optical properties of Ir₃Si₅

Electronic and optical properties of Ir₃Si₅