2019
DOI: 10.1016/j.jlumin.2019.116706
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Luminescence and Tm3+-to-Dy3+ energy transfer in TeO2:ZnO glass under NIR/UV excitation

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Cited by 21 publications
(1 citation statement)
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“…11) In order to solve this problem, rare earth (RE) ions doped wide bandgap semiconductors have attracted much attention as a promising luminescent material, because the emission wavelength of RE luminescence is hardly affected by temperature and the emission line from the 4 f intra-shell transitions in RE ions is very narrow. [12][13][14] We have focused on Ga 2 O 3 as the host material doped with RE ions because Ga 2 O 3 has a very wide bandgap (∼4.9 eV) and stable chemical and physical properties. We have fabricated green LEDs based on Er-Ga 2 O 3 and red LEDs based on Eu-Ga 2 O 3 .…”
mentioning
confidence: 99%
“…11) In order to solve this problem, rare earth (RE) ions doped wide bandgap semiconductors have attracted much attention as a promising luminescent material, because the emission wavelength of RE luminescence is hardly affected by temperature and the emission line from the 4 f intra-shell transitions in RE ions is very narrow. [12][13][14] We have focused on Ga 2 O 3 as the host material doped with RE ions because Ga 2 O 3 has a very wide bandgap (∼4.9 eV) and stable chemical and physical properties. We have fabricated green LEDs based on Er-Ga 2 O 3 and red LEDs based on Eu-Ga 2 O 3 .…”
mentioning
confidence: 99%