Luminescence and dose-rate response properties of Pr-doped Bi4Ge3O12 scintillators

Okazaki, Kai; Fukushima, Hiroyuki; Nakauchi, Daisuke; Okada, Go; Onoda, Daichi; Kato, Takumi; Kawaguchi, Noriaki; Yanagida, Takayuki

doi:10.1016/j.radmeas.2022.106773

Cited by 13 publications

(8 citation statements)

References 39 publications

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“…The lowest detection limits for which the linearity of the 0.1, 0.5, and 1% Tm-doped samples was retained were respectively 3, 0.06, and 0.03 Gy/h when the error bar of the intensity was defined as three standard deviations following a previous study. (41) The lowest limit was superior to that of Prdoped Gd 2 O 2 S measured with a Si charge-coupled device. (21) However, the limit was inferior to that measured using BGO doped with other rare earths with an InGaAs PD.…”

Section: Resultsmentioning

confidence: 80%

“…(21) However, the limit was inferior to that measured using BGO doped with other rare earths with an InGaAs PD. (39)(40)(41)(42) The main emission of Tm 3+ appeared at 800 nm as shown in Fig. 5.…”

Section: Resultsmentioning

confidence: 90%

“…The 0.1% Tm-doped BGO showed a relatively high QY compared with BGO doped with other rare earths, because the QYs of Nd-, Er-, Pr-, and Yb-doped BGO samples with the optimum doping concentration in the NIR range were respectively reported to be 43, 86, 35, and 26%. (39)(40)(41)(42) The PL decay curves of the samples are shown in Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

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Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

Okazaki¹,

Nakauchi²,

Fukushima³

et al. 2023

Sensors and Materials

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We grew 0.1, 0.5, and 1% Tm-doped Bi 4 Ge 3 O 12 single crystals by the floating zone method. Their photoluminescence and scintillation properties were investigated in the range from visible to near-IR. Luminescence spectra and decay times consistent with the transitions of Tm 3+ were confirmed. X-ray-irradiated dose rate response properties were evaluated using the prepared samples and an InGaAs photodiode. The 1% Tm-doped sample showed the widest dynamic range (0.03-60 Gy/h) among the prepared samples.

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Section: Resultsmentioning

confidence: 80%

Section: Resultsmentioning

confidence: 90%

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Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

Okazaki¹,

Nakauchi²,

Fukushima³

et al. 2023

Sensors and Materials

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“…Element doping into BGO is an efficient route to improve the scintillation property, especially luminescent peak and decay lifetime. 8−10 Okazaki et al reported that doped ions such as Pr 3+ ions would generate new red emission of f−f transition, 11 thus introducing a slow decay component and affecting its scintillation performance. In addition, Him et al…”

mentioning

confidence: 99%

“…Element doping into BGO is an efficient route to improve the scintillation property, especially luminescent peak and decay lifetime. − Okazaki et al reported that doped ions such as Pr 3+ ions would generate new red emission of f–f transition, thus introducing a slow decay component and affecting its scintillation performance. In addition, Him et al reported that doping Eu 3+ ions into BGO produced an orange-red emission between 580 and 710 nm originating from the 5 D 0,1 – 7 F x ( x = 0–6) radiation transition .…”

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confidence: 99%

Bismuth Vacancy-Induced Enhancement of Luminescence Intensity and Irradiation Resistance for Bi₄Ge₃O₁₂

Deng

Tang

Chen

et al. 2023

J. Phys. Chem. Lett.

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Bi4Ge3O12 (BGO) is a traditional scintillator, widely used in high-energy physics and nuclear medicine. However, it not only suffers from low scintillation intensity but also tends to be damaged by high-energy rays. Herein, we prepare pure-phase BGO materials enriched with Bi vacancies by rationally reduced Bi content, showing significantly enhanced luminescence intensity and irradiation resistance ability. The optimized Bi3.6Ge3O12 shows 178% of luminescence intensity compared to BGO. After 50 h of ultraviolet irradiation, Bi3.6Ge3O12 possesses ∼80% of original luminescence intensity, much superior to the 60% for BGO. The existence of the Bi vacancy is identified by advanced experimental and theoretical studies. The mechanism studies show the Bi vacancies could cause the symmetry destruction of the local field around the Bi3+ ion. It enhances scintillation luminescence by increasing the probability of radiative transition while resisting nonradiative relaxation caused by irradiation damage. This study initiates vacancy-induced performance enhancement for inorganic scintillators.

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Reducing Luminescence Intensity and Suppressing Irradiation‐induced Darkening of Bi₄Ge₃O₁₂ by Ce‐doping for Radiation Detection

Tang,

Deng,

Liu

et al. 2023

Advanced Optical Materials

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Due to its short radiation length, moderate light output (8000‐9000 photons/MeV), high density (7.13 g cm−3), and non‐hygroscopicity, etc., Bi4Ge3O12 (BGO) material has been widely utilized as an advanced scintillator for irradiation detection. However, pure BGO cannot meet the requirements for future physics experiments and state‐of‐art industrial facilities coupled with a silicon photomultiplier (SiPM) due to its slow response time, poor radiation resistance, and excessive light output. Herein, a Ce‐doping strategy is reported for efficiently improving the overall performance (e.g., irradiation resistance, decay time, radioluminescence, and light output) of BGO that can be expectedly applied in future high energy physics detection. Ce‐doped BGO (BGO:Ce) displays higher radiation resistance ability under 10 h UV irradiation (97% of original) and a faster fluorescence lifetime (269 ns), superior to pure BGO. Furthermore, BGO:Ce shows ≈30% luminescence intensity of pure BGO, well eliminating the oversaturation of SiPM coupled with scintillation detectors. Theoretical calculations imply that an intense competition between electron or hole traps and Ce ions (Ce3+, Ce4+) can effectively reduce the concentration of color centers, thus enhancing irradiation resistance ability.

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Luminescence and dose-rate response properties of Pr-doped Bi4Ge3O12 scintillators

Cited by 13 publications

References 39 publications

Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

Bismuth Vacancy-Induced Enhancement of Luminescence Intensity and Irradiation Resistance for Bi₄Ge₃O₁₂

Reducing Luminescence Intensity and Suppressing Irradiation‐induced Darkening of Bi₄Ge₃O₁₂ by Ce‐doping for Radiation Detection

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Luminescence and dose-rate response properties of Pr-doped Bi4Ge3O12 scintillators

Cited by 13 publications

References 39 publications

Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

Radiation-induced Luminescence Properties of Tm-doped Bi4Ge3O12 Single Crystals

Bismuth Vacancy-Induced Enhancement of Luminescence Intensity and Irradiation Resistance for Bi4Ge3O12

Reducing Luminescence Intensity and Suppressing Irradiation‐induced Darkening of Bi4Ge3O12 by Ce‐doping for Radiation Detection

Contact Info

Product

Resources

About

Bismuth Vacancy-Induced Enhancement of Luminescence Intensity and Irradiation Resistance for Bi₄Ge₃O₁₂

Reducing Luminescence Intensity and Suppressing Irradiation‐induced Darkening of Bi₄Ge₃O₁₂ by Ce‐doping for Radiation Detection