Luminescence and absorption of GaN films under high excitation

Petit, S.; Guennani, D.; Gilliot, P.; Hirlimann, Charles; Hönerlage, B.; Briot, Olivier; Aulombard, Roger

doi:10.1016/s0921-5107(96)01865-x

Cited by 17 publications

(9 citation statements)

References 9 publications

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“…Despite their importance, there have been only very few reports on the basic nonlinear properties of III-nitride materials, e.g., the two photon absorption (TPA) coefficient (b), Kerr refractive index (n kerr ), and three photon absorption (3PA) coefficient (c). [15][16][17][18] Sun et al studied TPA coefficients above half-bandgap photon energy for polar c-plane GaN, where the TPA coefficients b were reported to be 1767 and 1466 cm/GW at 387 and 391 nm, respectively, and 361:5 and 763 cm/GW at 720 and 690 nm, respectively. 15 Furthermore, Fang et al showed n kerr ¼ 1:15 Â10 À14 cm 2 =W (E?c) and 1:4 Â10 À14 cm 2 =W (E k c) at 800 nm for c-plane bulk GaN.…”

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confidence: 99%

Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations

Chen

Huang

et al. 2017

Applied Physics Letters

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We report the basic nonlinear optical properties, namely, two-photon absorption coefficient (b), three-photon absorption coefficient (c), and Kerr nonlinear refractive index (n kerr), of GaN crystals in polar c-plane, nonpolar m-plane, and semipolar (2021) plane orientations. A typical Z-scan technique was used for the measurement with a femtosecond Ti:S laser from wavelengths of 724 nm to 840 nm. For the two-photon absorption coefficient (b), similar values were obtained for polar, nonpolar, and semipolar samples, which are characterized to be $0.90 cm/GW at 724 nm and $0.65 cm/GW at 730 nm for all the three samples. For the Kerr nonlinear refractive index (n kerr), self-focusing features were observed in this work, which is different from previous reports where self-defocusing features were observed on GaN in the visible and near-UV spectral regions. At 724 nm, n kerr was measured to be $2.5 0 Â 10 À14 cm 2 =W for all three samples. Three-photon absorption coefficients (c) were also determined, which were found to be consistent with previous reports. This study provides valuable information on the basic nonlinear optical properties of III-nitride semiconductors, which are vital for a wide range of applications such as integrated photonics and quantum photonics.

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confidence: 99%

Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations

Chen

Huang

et al. 2017

Applied Physics Letters

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“…Among different techniques, the TPA process [12] is a valuable method to generate nonequilibrium carrier densities within a large sample volume for investigation of bulk properties of various widebandgap semiconductors. A large TPA coefficient of ~17.5 cm/GW at 600 nm was measured in GaN thin films [15] Autocorrelation and cross-correlation signals of UV, visible, and infrared femtosecond pulses have been observed [16], [17].…”

Section: Pump-probe Characterization Of Gan and Al X Ga 1-x N Semiconmentioning

confidence: 93%

Femtosecond pump-probe characterization of high-pressure grown Al x Ga 1-x N single crystals

et al. 2009

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We report our experimental studies on the time-resolved dynamics of conduction electrons in high quality Al x Ga 1-x N single crystals. The Al x Ga 1-x N synthesis with the Al content of up to 90% was performed using a solution growth technique in a high nitrogen pressure system, maintained for several days under the high (up to 15 kBar) gas pressure and at very high (up to 1800°C) temperatures. The resulting crystals were colorless (fully transparent to visible light) platelets up to ~1 mm 2 in size, and exhibited a hexagonal Würtzite structure. Our optical measurements were performed at room temperature, using a two-color (ultraviolet and near-infrared), femtosecond, pump-probe spectroscopy, by invoking a two-photon, volume absorption and scanning the normalized transient differential transmitivitty ( T/T) signal of the probe beam. The observed T/T signal was a superposition of a femtosecond, two-photon-absorption (TPA) correlation transient and a conventional optical pump-probe photoresponse signal with a rise time of ~1 ps and decay of ~75 ps. We have found that the TPA process was quite efficient with the absorption coefficient 0.337 cm/GW at 380 nm, and enabled us to directly determine that the optical bandgap of Al x Ga 1-x N (x = 0.86) was 5.81 +/-0.01 eV. The latter value is in the good agreement with the one deduced from the x-ray diffraction measurements.

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“…1 With the recent advances in the studies of GaN for optoelectronics, light-emitting, and lasing applications ͑in green to UV fre-quencies͒, more attention is also being paid to GaN for its optical limiting properties. [4][5][6][7] The measured values of TPA in GaN in the visible spectral wavelength varied from about 5 cm/G W at 700 nm to nearly 18 cm/G W at 600 nm. 6,7 Although these values are considerably higher than those in other wide-band-gap materials, a further increase in the TPA coefficient is sought.…”

Section: Two-photon Absorption In Gan Gainn and Gaaln Alloysmentioning

confidence: 99%

“…[4][5][6][7] The measured values of TPA in GaN in the visible spectral wavelength varied from about 5 cm/G W at 700 nm to nearly 18 cm/G W at 600 nm. 6,7 Although these values are considerably higher than those in other wide-band-gap materials, a further increase in the TPA coefficient is sought. For example, if TPA is the only limiting mechanism, we can show that a TPA coefficient value of nearly 138 cm/G W is needed to limit a 10 ns pulse of 1 J down to 1 J in a 1-cm-thick material.…”

Section: Two-photon Absorption In Gan Gainn and Gaaln Alloysmentioning

confidence: 99%

Two-photon absorption in GaN, GaInN, and GaAlN alloys

Krishnamurthy

Nashold

Sher

2000

Applied Physics Letters

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We have carried out full band-structure-based studies of two-photon absorption coefficients in the GaN compound, and GaInN and GaAlN alloys. An accurate Hamiltonian and resulting wave functions and band structures are used in the calculations. The coefficients in GaN calculated without any adjustable parameters agree very well with recent experiments. We further show that the two-photon absorption coefficients can be increased or decreased by adding In or Al to the GaN compound. The spectral variation of the absorption coefficient can be explained in terms of the alloy-induced changes in the band gap and joint density of states.

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Luminescence and absorption of GaN films under high excitation

Cited by 17 publications

References 9 publications

Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations

Characterizations of nonlinear optical properties on GaN crystals in polar, nonpolar, and semipolar orientations

Femtosecond pump-probe characterization of high-pressure grown Al x Ga 1-x N single crystals

Two-photon absorption in GaN, GaInN, and GaAlN alloys

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