Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation

Schenk, H. P. D.; Leroux, M.; Mierry, P. de

doi:10.1063/1.373850

Cited by 86 publications

(46 citation statements)

References 87 publications

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“…Recombination from deeper levels causes a shift of the PL peak energy toward a lower energy. [17][18][19][20] This small redshift of the PL spectrum, due to the transfer of exciton population from higher-to lower-energy states of the band tail, can be observed in Fig. 2͑c͒.…”

Section: Methodsmentioning

confidence: 88%

“…The coefficients A and B measure the efficiency of each quenching mechanisms. 17,32 These preexponential factors are inversely related to the nonradiative lifetime, i.e., to the density of nonradiative centers ͑for more details see Refs. 32 and 34͒.…”

Section: Resultsmentioning

confidence: 99%

“…18,[23][24][25] Depending on the energy excess ͑obtained from the laser pumping energy͒ and the magnitude of the potential fluctuation, the excitons will relax either to the local minima or to the absolute minimum of the confinement potential via phonon emission before the radiative recombination takes place. 17,19 Therefore, the PL spectrum reflects the exciton distribution in the energy states generated by potential fluctuations. Figure 2 shows the PL spectra for sample No.…”

Section: Methodsmentioning

confidence: 99%

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Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence ͑PL͒ technique in the temperature range from 9 to 296 K. A strong redshift in optical transition energies induced by a small increase in N concentration has been observed in the PL spectra. This effect can be explained by the interaction between a narrow resonant band formed by the N-localized states and the conduction band of the host semiconductor. Excitonic transitions in the quantum wells show a successive red/blue/redshift with increasing temperature in the 2-100 K range. The activation energies of nonradiative channels responsible for a strong thermal quenching are deduced from an Arrhenius plot of the integrated PL intensity.

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Section: Methodsmentioning

confidence: 88%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Lourenço

Dias

Poças

et al. 2003

Journal of Applied Physics

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“…3. The difference between the fittings, with or without the thermal expansion contribution, reaches the value of ∼1 meV at T = 65 K. Although this difference is small, it should be taken into account, once other physical phenomena such as the excitons localization by potential fluctuation in semiconductor alloys are commonly used to explain the blueshifts of this magnitude in the variation of the excitonic transitions with temperature [51,[57][58][59]. Although the NTE induces a small blueshift of energy gap in the temperature range from 23 K to 95 K, the optical transition energy in the GaAs displays a small redshift in this same temperature range.…”

Section: Resultsmentioning

confidence: 99%

Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs

et al. 2004

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Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions in the ternary AlxGa1−xAs alloy in the temperature range from 2 to 300 K. The effect of the thermal expansion contribution on the temperature dependence of excitonic transitions for different aluminum concentrations in the AlxGa1−xAs alloy is presented. Results from this study have shown that the negative thermal expansion (NTE) in the AlxGa1−xAs alloy, in the low temperature interval, induces a small blueshift in the optical transition energy. In the temperature range from ∼23 to ∼95 K there is a competition between the NTE effect and the electron-phonon interaction. Using the thermal expansion coefficient in the 2 -300 K temperature range, the thermal expansion contribution to GaAs, at room temperature, represents 21% of the total shift of the excitonic transition energy. After subtracting the thermal expansion contribution from the experimental temperature dependence of the excitonic transitions, in the AlxGa1−xAs alloy, the contribution to the electron-phonon interaction of the longitudinal optical phonon increases, relatively to the longitudinal acoustical phonon, with increasing Al concentration.

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“…Therefore, studies carried out on thick InGaN epilayers are especially relevant as they allow minimizing the number of degrees of freedom. [17][18][19][20][21][22][23][24] However, the vast majority of the previous investigations was performed on InGaN epilayers grown on sapphire for which the threading dislocation density remains significant (>10 8 cm…”

mentioning

confidence: 99%

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

Butté

Lahourcade

Uždavinys

et al. 2018

Applied Physics Letters

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To assess the impact of random alloying on the optical properties of the InGaN alloy, high-quality InxGa1−xN (0 < x < 0.18) epilayers grown on c-plane free-standing GaN substrates are characterized both structurally and optically. The thickness (25–100 nm) was adjusted to keep these layers pseudomorphically strained over the whole range of explored indium content as checked by x-ray diffraction measurements. The evolution of the low temperature optical absorption (OA) edge linewidth as a function of absorption energy, and hence the indium content, is analyzed in the framework of the random alloy model. The latter shows that the OA edge linewidth should not markedly increase above an indium content of 4%, varying from 17 meV to 30 meV for 20% indium. The experimental data initially follow the same trend with, however, a deviation from this model for indium contents exceeding only ∼2%. Complementary room temperature near-field photoluminescence measurements carried out using a scanning near-field optical microscope combined with simultaneous surface morphology mappings reveal spatial disorder due to growth meandering. We conclude that for thick high-quality pseudomorphic InGaN layers, a deviation from pure random alloying occurs due to the interplay between indium incorporation and longer range fluctuations induced by the InGaN step-meandering growth mode.

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Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation

Cited by 86 publications

References 87 publications

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy

Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs

Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations

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