Luminescence analysis of group III and V impurities in silicon

Kaminskii, A. S.; Kolesnik, L. I.; Leiferov, B.M.; Pokrovskiı̆, Ya. E.

doi:10.1007/bf00663653

Cited by 18 publications

(8 citation statements)

References 2 publications

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“…As an indirect semiconductor, the radiative recombination through neutral dopants in silicon also requires the participation of phonons to conserve momentum. At temperatures below 20 K, the TO phonon was identified to be involved with the recombination of excitons bound to dopant atoms . At 79 K, the features associated with the recombination via neutral boron and phosphorous become much broader, as shown in Fig.…”

Section: Resultsmentioning

confidence: 96%

“…Tajima first developed the technique for quantifying the boron and phosphorous dopant concentrations in silicon by comparing the luminescence intensity ratios of the dopant bound exciton (BE) to the free exciton (FE) recombination peaks. Other groups applied this technique and reported similar findings . These luminescence spectroscopy measurements were all performed at the liquid helium temperature of 4.2 K, and the technique was limited to dopant concentrations below 10 15 cm −3 .…”

Section: Introductionmentioning

confidence: 77%

“…Dean et al suggested that such dopant peaks likely originated from the recombination of free electron–hole pairs through the neutral dopant atoms, rather than through the recombination of excitons bound to dopants (BE), which is commonly observed at temperatures below 20 K, the temperature range used in Refs. .…”

Section: Resultsmentioning

confidence: 99%

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Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Liu

Nguyen

Macdonald

2016

Physica Status Solidi (a)

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Phone: þ61 2 612 555 38, Fax: +61 2 6125 0506 Photoluminescence spectroscopy at 79 K is shown to provide an alternative, non-destructive characterisation method for quantifying the boron and phosphorous dopant concentrations in silicon. The dopant concentrations are revealed by the photoluminescence intensity ratios of the dopant-related features to the band-to-band recombination peaks. The intensity ratio is found to be insensitive to the excitation power in a wide range of 0.3 W cm À2 -100 kW cm À2 . Calibration curves for boron and phosphorous in silicon are presented for [B] below 5 Â 10 17 cm À3 and [P] below 8 Â 10 16 cm À3 .

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 77%

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Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Liu

Nguyen

Macdonald

2016

Physica Status Solidi (a)

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“…(17). Such determination is possible in the presence of free excitons in crystals which s always realized when the content of impurities is lower than 2.101J at cm3.The recombination of an exciton connected with the neutral atom of the impurity, gives a characteristic line in the luminescence spectrum, which can also be used to identify the impurity atoms.The concentration of impurities can be determined with help of calibration plots of the ratio of intensities of bound and free exciton lines versus concentration.…”

Section: Luminescence Methodsmentioning

confidence: 99%

General aspects of trace analytical methods: Part VII. Trace analysis of semiconductor materials - Part B: Distribution analysis

Grasserbauer¹,

Zolotov²,

Morrison³

1985

Pure and Applied Chemistry

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“…Phosphorus, boron, aluminum, or arsenic are of particular interest. [ 1–12 ] Several calibration functions for the determination of the dopant concentration have been reported previously. These calibration curves describe the ratio of photoluminescence intensity of bound (

\text{BE}

) and free excitons (

\text{FE}

) as a function of the dopant concentration.…”

Section: Introductionmentioning

confidence: 99%

Calibration of Low‐Temperature Photoluminescence of Boron‐Doped Silicon with Increased Temperature Precision

Peh,

Flötotto,

Lauer

et al. 2023

Physica Status Solidi (b)

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Low‐temperature photoluminescence spectroscopy enables the determination of the dopant concentration of shallow impurities in silicon. This measurement method is therefore well suited for identifying and analyzing dopants (intentional impurities in silicon). A method is presented which allows the determination of the boron concentration in silicon in a range from to at temperatures from 4.2 to 20 K with increased temperature accuracy. This method requires only one calibration function for the photoluminescence intensity ratio of the boron‐bound exciton and the free exciton . The measurement temperature is obtained from the intrinsic silicon photoluminescence line of free excitons () using a fitting method, which distinguishes the and components of the free exciton peak. The determined calibration function is . The obtained exciton binding energy to boron, , agrees well with literature data.

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Luminescence analysis of group III and V impurities in silicon

Cited by 18 publications

References 2 publications

Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K

General aspects of trace analytical methods: Part VII. Trace analysis of semiconductor materials - Part B: Distribution analysis

Calibration of Low‐Temperature Photoluminescence of Boron‐Doped Silicon with Increased Temperature Precision

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