LTPS TFTs with an Amorphous Silicon Buffer Layer and Source/Drain Extension

Kim, Hye In; Sung, Jung-Min; Cho, Hyung Uk; Kim, Yong Jo; Park, Young Gwan; Choi, Woo Young

doi:10.3390/electronics10010029

Cited by 6 publications

(3 citation statements)

References 37 publications

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“…Through electrical measurements, an off-state leakage is found, which is also known as the gate-induced drain leakage (GIDL) current [38][39][40]. Previous studies based on planar structure have reported that the GIDL current results from the trap-assisted tunneling model induced by the grain boundary of the channel [38,41,42]. In this work, the GIDL current is increased with the drain bias increasing.…”

mentioning

confidence: 92%

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Chen¹,

Zheng

Yeh

et al. 2023

J. Phys. D: Appl. Phys.

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Currently, thin film transistor (TFT) based on planar structure is widely used in the applications of display panels. However, when the device is scaling-down, new device structures or novel materials should be introduced. In this work, the low temperature polycrystalline silicon (LTPS) TFT with fin-like structure is investigated. On the basis of electrical measurements, the device features good switching characteristics with low operating voltages. However, the Id-Vg sweeping result exhibits off-state leakage, which is known as the gate-induced drain leakage (GIDL) current. The GIDL current is increased with the drain bias and the temperature increasing. To observe the GIDL current degradations, different gate biases with negative bias stress (NBS) and positive bias stress (PBS) are applied. The results show different degradation behaviors. In addition, bias stresses with DC and AC methods are also applied to verify the device reliability. Both threshold voltage (Vt) shift and sub-threshold swing (S.S.) are also extracted to verify the degradations of the device. Finally, the physical models are also proposed to illustrate the degradation behaviors of the LTPS device with a fin-like structure, which can be beneficial to future related development of LTPS-based devices.

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mentioning

confidence: 92%

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Chen¹,

Zheng

Yeh

et al. 2023

J. Phys. D: Appl. Phys.

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“…The three main parts of TFT include the active channel layer, the insulating layer and the electrode material, wherein the active channel layer material plays a key role in the fabrication of high-quality TFTs. Various materials, such as hydrogenated amorphous silicon (a-Si:H), polycrystalline silicon (poly-Si) and organic semiconductors, have been used as the active channel layer for the fabrication of TFTs [3][4][5]. However, the Si-based TFTs possess an inherent limitation: they are opaque in the visible wavelength region, which results in the reduction of light transmittance and brightness for the display [6].…”

Section: Introductionmentioning

confidence: 99%

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

Song²,

Wang³

et al. 2022

Nanotechnology

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In this study, the homojunction thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (a-IGZO) as active channel layers and source/drain electrodes were fabricated by RF magnetron sputtering. The effect of oxygen partial pressure on the phase, microstructure, optical and electrical properties of IGZO thin films was investigated. The results showed that amorphous IGZO thin films always exhibit a high transmittance above 90% and wide band gaps of around 3.9 eV. The resistivity increases as the IGZO thin films are deposited at a higher oxygen partial pressure due to the depletion of oxygen vacancies. In addition, the electrical behaviors in homojunction IGZO TFTs were analyzed. When the active channel layers were deposited with an oxygen partial pressure of 1.96%, the homojunction IGZO TFTs exhibited optimal transfer and output characteristics with a field-effect mobility of 13.68 cm2 V-1s-1. Its sub-threshold swing, threshold voltage and on/off ratio are 0.6 V/decade, 0.61 V and 107, respectively.

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“…Up to now, the mainstream television resolution is 2K, while 4K is the next generation mainstream television technology [ 5 , 6 ]. However, when the resolution increases from 2K to 4K, the resistance and capacitance loading (RC loading) in the scan lines of the displays will increase significantly [ 7 , 8 , 9 , 10 ]. Therefore, it is a challenge to design these displays with a 4K resolution because the rising time is rather long.…”

Section: Introductionmentioning

confidence: 99%

High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display

Rong

Lin

et al. 2022

Micromachines

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In this work, a promising dual-gated thin film transistor (TFT) structure has been proposed and introduced in the shift register (SR)-integrated circuits to reduce the rising time. The threshold voltage can be simultaneously changed by the top gate and the bottom gate in the proposed dual-gated TFTs. When the SR circuits start to export the scan signals in the displays, the driving currents in the SR circuits are increased by switching the working station of driving TFTs from the enhancement characterization to the depletion characterization. Subsequently, the detailed smart spice simulation has been used to study the function of the proposed SR circuits. In the next step, the proposed SR circuits have been fabricated in a G4.5 active-matrix organic light-emitting diode manufacture factory. The simulated and experimental results indicate that the shift register pulses with the full swing amplitude can be obtained in the SR circuits. Moreover, in contrast to the conventional SR circuits employing with the single-gated TFTs, it has been found that the rising time of the output signals can be reduced from 3.75 μs to 1.23 μs in the proposed SR circuits with the dual-gated TFTs, thus exhibiting the significant improvement of the driving force in the proposed SR circuits. Finally, we demonstrated a 31-inch 4K AMOLED display with the proposed SR circuits.

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LTPS TFTs with an Amorphous Silicon Buffer Layer and Source/Drain Extension

Cited by 6 publications

References 37 publications

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Investigating DC and AC degradation behaviors to P-type low temperature polycrystalline silicon thin film transistor with fin-like structure

Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors

High-Speed Shift Register with Dual-Gated Thin-Film Transistors for a 31-Inch 4K AMOLED Display

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